Low Frequency Noise in 4H-SiC Schottky Diodes Under Forward Bias

2015 ◽  
Vol 821-823 ◽  
pp. 559-562
Author(s):  
Eugenia I. Shabunina ◽  
Michael E. Levinshtein ◽  
Natalia M. Shmidt ◽  
Pavel A. Ivanov ◽  
John W. Palmour ◽  
...  
Keyword(s):  
Main Part ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
High Quality ◽  
Noise Density ◽  
First Time

The 1/f noise has been investigated for the first time at 300 and 77 K in high-quality 4H-SiC Schottky diodes. It is shown that, that at 77 K, the dependence of the spectral noise density on current, SI(I), differs fundamentally between the cases of the current flowing through the main part of the diode area with a comparatively high barrier and the current flowing through the nanosized patches with a comparatively low barrier.

Investigation of Low-Frequency Noise Characteristics in Gated Schottky Diodes

2021 ◽  
Vol 42 (3) ◽  
pp. 442-445
Author(s):  
Dongseok Kwon ◽  
Wonjun Shin ◽  
Jong-Ho Bae ◽  
Suhwan Lim ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics

Effect of Ge-Nanoislands on the Low-Frequency Noise in Si/SiOx/Ge Structures

2013 ◽  
Vol 854 ◽  
pp. 21-27 ◽  
Author(s):  
N.P. Garbar ◽  
Valeriya N. Kudina ◽  
V.S. Lysenko ◽  
S.V. Kondratenko ◽  
Yu.N. Kozyrev
Keyword(s):  
High Surface ◽  
Low Frequency ◽  
Noise Model ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Physical Processes ◽  
Noise Sources ◽  
Noise Component ◽  
First Time ◽  
Noise Models

Low-frequency noise of the structures with Ge-nanoclusters of rather high surface density grown on the oxidized silicon surface is investigated for the first time. It was revealed that the 1/f γ noise, where γ is close to unity, is the typical noise component. Nevertheless, the 1/f γ noise sources were found to be distributed nonuniformly upon the oxidized silicon structure with Ge-nanoclusters. The noise features revealed were analyzed in the framework of widely used noise models. However, the models used appeared to be unsuitable to explain the noise behavior of the structures studied. The physical processes that should be allowed for to develop the appropriate noise model are discussed.

Low Frequency Noise in 4H-SiC MOSFETs

2009 ◽  
Vol 615-617 ◽  
pp. 817-820 ◽  
Author(s):  
Sergey L. Rumyantsev ◽  
Michael S. Shur ◽  
Michael E. Levinshtein ◽  
Pavel A. Ivanov ◽  
John W. Palmour ◽  
...  
Keyword(s):  
Flicker Noise ◽  
Low Frequency ◽  
Drain Current ◽  
Localized States ◽  
Conduction Band Edge ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Channel Mobility ◽  
Strong Inversion ◽  
First Time

Low-frequency noise in 4H-SiC MOSFETs has been measured for the first time. At drain currents varying from deep subthreshold to strong inversion, the 1/f (flicker) noise dominated at frequencies 1 - 105 Hz. The dependence of relative spectral noise density, , on drain current Id (at a constant drain voltage Vd) differs qualitatively from that in Si MOSFETs. In Si MOSFETs, ~ 1/ in strong inversion, whereas tends to saturate in sub-threshold. In 4H-SiC MOSFETs under study, ~ 1/ over the whole range of currents from deep sub-threshold to strong inversion. Similar noise behavior is often observed in poly- or a-Si TFTs. The effective channel mobility in 4H-SiC MOSFETs, 3 - 7 cm2/Vs, is also as low as that in TFTs. Both noise behavior and transport properties of 4H-SiC MOSFETs are explained, analogously to TFTs, by a high density of localized states (bulk and interface) near the conduction band edge in the ion implanted p-well.

Impact of Proton Irradiation on Power 4H-SiC MOSFETs

2020 ◽  
Vol 1004 ◽  
pp. 1074-1080
Author(s):  
Alexander A. Lebedev ◽  
Vitalii V. Kozlovski ◽  
Leonid Fursin ◽  
Anatoly M. Strel'chuk ◽  
Mikhail E. Levinshtein ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
Removal Rate ◽  
Low Frequency ◽  
Frequency Noise ◽  
Electrical Characteristics ◽  
Low Frequency Noise ◽  
Frequency Range ◽  
Maximum Value ◽  
Noise Spectroscopy ◽  
Noise Density

Impact of 15 MeV proton irradiation on electrical characteristics and low frequency noise has been studied in high-power vertical 4H-SiC MOSFETs of 1.2 kV-class at doses 1012 £ F £ 1014 cm-2. The maximum value of the field-effect mobility µFЕ depends weakly on F up to F = 2×1013 cm-2. At F = 4×1013 cm-2, the character of the µFЕ(Vg) dependence changes radically. The maximum µFЕ decreases approximately threefold. The dose Fcr corresponding to the complete degradation of the device is about 1014 cm-2. It can be estimated as Fcr» he/n0, where he is the electron removal rate and n0 is the initial electron concentration in the drift layer. In the entire frequency range of analysis f, gate voltages, and drain-source biases, the frequency dependence of the current spectral noise density SI(f) follows the law SI ~ 1/f. From the data of noise spectroscopy, the density of traps in the gate oxide Ntv has been estimated. In non-irradiated structures, Ntv » 5.4×1018 cm-3eV-1. At Ф = 6×1013 cm-2, the Ntv value increases to Ntv » 7.2×1019cm-3eV-1. The non-monotonic behavior of the output current Id and the level of low frequency noise on dose F has been demonstrated.

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