Microscopic FCA System for Depth-Resolved Carrier Lifetime Measurement in SiC

2018 ◽  
Vol 924 ◽  
pp. 269-272 ◽  
Author(s):  
Shinichi Mae ◽  
Takeshi Tawara ◽  
Hidekazu Tsuchida ◽  
Masashi Kato
Keyword(s):  
Carrier Lifetime ◽  
Laser Light ◽  
Probe Laser ◽  
Free Carrier Absorption ◽  
Cross Sectional ◽  
Lifetime Measurements ◽  
Control Distribution ◽  
System A ◽  
Excitation Laser ◽  
Carrier Absorption

For high voltage SiC bipolar devices, carrier lifetime is an important parameter, and for optimization of device performance, we need to control distribution of the carrier lifetime in a wafer. So far, there have been limited systems for depth-resolved carrier lifetime measurements without cross sectional cut. In this study, we adopted a free carrier absorption technique and made local overlapping of the probe laser light with excitation laser light to develop depth-resolved carrier lifetime measurements. We named the developed system a microscopic FCA system and demonstrated measurement results for samples with and without intentional carrier lifetime distribution.

Microwave and Infra Red Light Absorption Studies of Carrier Lifetime in Silicon and Germanium

2007 ◽  
Vol 131-133 ◽  
pp. 149-154
Author(s):  
Eugenijus Gaubas ◽  
Jan Vanhellemont
Keyword(s):  
Carrier Lifetime ◽  
Red Light ◽  
Free Carrier Absorption ◽  
Transient Techniques ◽  
Absorption Studies ◽  
Infra Red ◽  
Carrier Absorption ◽  
Silicon And Germanium ◽  
The Impact ◽  
Metallic Impurities

Results are presented of a comparative study of carrier lifetime in silicon and germanium. The impact of surface quality and passivation, of dopant type and concentration and of metallic impurities is studied using microwave probed free carrier absorption transient techniques.

Non-Destructive Assessment Of Semiconductor Carrier Lifetime Using Photothermal Radiometry

1996 ◽  
Vol 428 ◽  
Author(s):  
S. Amirhaghi ◽  
A. J. Kenyon ◽  
M. Federighi ◽  
C. W. Pitt
Keyword(s):  
Carrier Lifetime ◽  
Modulation Frequency ◽  
Broad Band ◽  
Free Carrier ◽  
Surface Recombination Velocity ◽  
Free Carrier Absorption ◽  
Ir Radiation ◽  
Important Indicator ◽  
Carrier Absorption ◽  
Non Destructive

AbstractOf crucial importance to all areas of the microelectronics industry is the characterisation of silicon wafer quality. An important indicator of this is carrier lifetime, and a convenient non-destructive method for its measurement is Pholothermal Radiometry. This involves the photo-generation within a semiconductor sample of electron-hole pairs. Periodic generation of carriers leads to modulation of free-carrier absorption of mid-ir radiation provided by a black body source. The fr-radiation detected from the photo-excited region is inversely proportional to the optically induced carrier density. As the modulation frequency is increased, a point is reached at which the photo-generated carriers no longer have sufficient time to decay between pulses. This frequency is dependent on the carrier lifetime. We present a description of the Photothermal Radiometric lifetime scanning instrument built at UCL. This instrument offers an accurate method for producing detailed maps of carrier lifetime across whole or part wafers. The problem of surface-state effects has been addressed by employing a broad-band uv source to optically fill the surface states of the sample under investigation. The instrument is capable of producing maps of lifetime variation with 0.5 mm resolution. Alternatively, for selected points on a wafer, the instrument can generate detailed frequercy scans of free-carrier absorption. From these, it is possible to obtain information on surface recombination velocity and diffusion length.

Nonlinear Laser Melting Of Indium Antimonide And Silicon

1983 ◽  
Vol 13 ◽  
Author(s):  
Michael P. Hasselbeck ◽  
H. S. Kwok
Keyword(s):  
Indium Antimonide ◽  
Laser Light ◽  
Free Carrier ◽  
Photon Absorption ◽  
Free Carrier Absorption ◽  
Two Photon Absorption ◽  
Free Carriers ◽  
Two Photon ◽  
Avalanche Ionization ◽  
Carrier Absorption

ABSTRACTPulsed 10.6μm TEA CO2 laser light has been used to melt the semiconductors silicon and InSb. Measurements indicate that generation of free carriers necessary for melting may take place by nonlinear processes such as two-photon absorption or intraband avalanche ionization. If the semiconductor is sufficiently doped, melting may also result from linear free carrier absorption. In all cases, it appears that the molten depth exceeds several μm, which is much greater than obtained with lasers of shorter wavelength.

Optically Detected Temperature Dependences of Carrier Lifetime and Diffusion Coefficient in 4H- and 3C-SiC

2011 ◽  
Vol 679-680 ◽  
pp. 205-208 ◽  
Author(s):  
Jawad ul Hassan ◽  
Patrik Ščajev ◽  
Kęstutis Jarašiūnas ◽  
Peder Bergman
Keyword(s):  
Diffusion Coefficient ◽  
Decay Time ◽  
Carrier Lifetime ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Time Resolved ◽  
Temperature Dependences ◽  
Carrier Absorption ◽  
Time Resolved Photoluminescence ◽  
And Diffusion

Free carrier dynamics has been studied in 4H- and 3C-SiC in a wide temperature range using time-resolved photoluminescence, free carrier absorption, and light induced transient grating techniques. Considerably high carrier lifetime was observed in 3C-SiC epitaxial layers grown on 4H-SiC substrates using hot-wall CVD with respect to previously reported values for 3C-SiC grown either on Si or on 6H-SiC substrates. The temperature dependences of carrier lifetime and diffusion coefficient for 4H- and 3C-SiC were compared. Shorter photoluminescence decay time with respect to free carrier absorption decay time was observed in the same 4H-SiC sample, while these techniques revealed similar trends in the carrier lifetime temperature dependencies. However, the latter dependences for hot-wall CVD-grown 3C layers were found different if measured by time resolved photoluminescence and free carrier absorption techniques.

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