Impact of Stripe Trench-Gate Structure for 4H-SiC Trench MOSFET with Bottom Oxide Protection Layer

2018 ◽  
Vol 924 ◽  
pp. 761-764
Author(s):  
Yutaka Fukui ◽  
Katsutoshi Sugawara ◽  
Kohei Adachi ◽  
Hideyuki Hatta ◽  
Kazuya Konishi ◽  
...  
Keyword(s):  
Dynamic Characteristics ◽  
Threshold Voltage ◽  
Lattice Structure ◽  
Depletion Layer ◽  
Switching Loss ◽  
Static And Dynamic Characteristics ◽  
Gate Structure ◽  
Stripe Structure ◽  
Protection Layer ◽  
The Difference

An optimized layout for a trench-gate SiC-MOSFET with a self-aligned Bottom P-Well (BPW) was investigated for reduction of the specific on-resistance and switching loss. The static and dynamic characteristics of trench-gate MOSFETs with lattice and stripe in-plane structures were evaluated by varying the distance between neighboring BPWs (dBPWs). For the stripe structure, more significant improvements on the specific on-resistance (Ron,sp), gate-source threshold voltage (Vth) were achieved compared with the lattice structure, which was found to be due to the difference in the spread of the depletion layer and the channel planes in the device.

Evaluation of SiC Stack Cascode for 200°C Operations

2014 ◽  
Vol 778-780 ◽  
pp. 879-882 ◽  
Author(s):  
Xue Qing Li ◽  
Petre Alexandrov ◽  
John Hostetler ◽  
Anup Bhalla
Keyword(s):  
Dynamic Characteristics ◽  
Threshold Voltage ◽  
Load Condition ◽  
Experimental Results ◽  
Reliability Test ◽  
Inductive Load ◽  
Static And Dynamic Characteristics

This paper evaluates the static and dynamic characteristics of a 1.2kV SiC stack-cascode at junction temperatures (Tj) up to 200°C. The experimental results show that, at Tj = 200°C, the SiC stack-cascode can be switched stably under a 600V-17A inductive load condition and can withstand an avalanche current of 13A for 9μs (Eav = 116mJ) for a 1.5mH load inductor. The SiC stack-cascode has no degradation in on-resistance, threshold voltage and blocking characteristics after 80 hours HTRB reliability test at 200°C ambient. These promising experimental results indicate the possibility of the SiC stack-cascode for reliable 200°C operations.

Invited PaperTemperature dependence of SiGe HBT static and dynamic characteristics

1998 ◽  
Vol 08 (PR3) ◽  
pp. Pr3-81-Pr3-86
Author(s):  
F. Aniel ◽  
N. Zerounian ◽  
A. Gruhle ◽  
C. Mähner ◽  
G. Vernet ◽  
...  
Keyword(s):  
Dynamic Characteristics ◽  
Static And Dynamic Characteristics ◽  
Sige Hbt

scholarly journals Smoke recognition network based on dynamic characteristics

2020 ◽  
Vol 17 (3) ◽  
pp. 172988142092566
Author(s):  
Dahan Wang ◽  
Sheng Luo ◽  
Li Zhao ◽  
Xiaoming Pan ◽  
Muchou Wang ◽  
...  
Keyword(s):  
Dynamic Characteristics ◽  
State Of The Art ◽  
The State ◽  
Detection Accuracy ◽  
Static Characteristics ◽  
Good Tool ◽  
Early Signal ◽  
Fuzzy Objects ◽  
The Difference ◽  
Smoke Recognition

Fire is a fierce disaster, and smoke is the early signal of fire. Since such features as chrominance, texture, and shape of smoke are very special, a lot of methods based on these features have been developed. But these static characteristics vary widely, so there are some exceptions leading to low detection accuracy. On the other side, the motion of smoke is much more discriminating than the aforementioned features, so a time-domain neural network is proposed to extract its dynamic characteristics. This smoke recognition network has these advantages:(1) extract the spatiotemporal with the 3D filters which work on dynamic and static characteristics synchronously; (2) high accuracy, 87.31% samples being classified rightly, which is the state of the art even in a chaotic environments, and the fuzzy objects for other methods, such as haze, fog, and climbing cars, are distinguished distinctly; (3) high sensitiveness, smoke being detected averagely at the 23rd frame, which is also the state of the art, which is meaningful to alarm early fire as soon as possible; and (4) it is not been based on any hypothesis, which guarantee the method compatible. Finally, a new metric, the difference between the first frame in which smoke is detected and the first frame in which smoke happens, is proposed to compare the algorithms sensitivity in videos. The experiments confirm that the dynamic characteristics are more discriminating than the aforementioned static characteristics, and smoke recognition network is a good tool to extract compound feature.

Critical Technical Issues in High Voltage SiC Power Devices

2008 ◽  
Vol 600-603 ◽  
pp. 895-900 ◽  
Author(s):  
Anant K. Agarwal ◽  
Albert A. Burk ◽  
Robert Callanan ◽  
Craig Capell ◽  
Mrinal K. Das ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Carrier Mobility ◽  
Negative Charge ◽  
State Of The Art ◽  
Power Devices ◽  
Power Mosfets ◽  
Large Numbers ◽  
Technical Issues ◽  
The Difference ◽  
Difficult Issue

In this paper, we review the state of the art of SiC switches and the technical issues which remain. Specifically, we will review the progress and remaining challenges associated with SiC power MOSFETs and BJTs. The most difficult issue when fabricating MOSFETs has been an excessive variation in threshold voltage from batch to batch. This difficulty arises due to the fact that the threshold voltage is determined by the difference between two large numbers, namely, a large fixed oxide charge and a large negative charge in the interface traps. There may also be some significant charge captured in the bulk traps in SiC and SiO2. The effect of recombination-induced stacking faults (SFs) on majority carrier mobility has been confirmed with 10 kV Merged PN Schottky (MPS) diodes and MOSFETs. The same SFs have been found to be responsible for degradation of BJTs.

scholarly journals 4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3554
Author(s):  
Jaeyeop Na ◽  
Jinhee Cheon ◽  
Kwangsoo Kim
Keyword(s):  
Dynamic Characteristics ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Switching Loss ◽  
Switching Speed ◽  
Polysilicon Gate ◽  
Effect Transistor ◽  
Switching Characteristics

In this paper, a novel 4H-SiC split heterojunction gate double trench metal-oxide-semiconductor field-effect transistor (SHG-DTMOS) is proposed to improve switching speed and loss. The device modifies the split gate double trench MOSFET (SG-DTMOS) by changing the N+ polysilicon split gate to the P+ polysilicon split gate. It has two separate P+ shielding regions under the gate to use the P+ split polysilicon gate as a heterojunction body diode and prevent reverse leakage `current. The static and most dynamic characteristics of the SHG-DTMOS are almost like those of the SG-DTMOS. However, the reverse recovery charge is improved by 65.83% and 73.45%, and the switching loss is improved by 54.84% and 44.98%, respectively, compared with the conventional double trench MOSFET (Con-DTMOS) and SG-DTMOS owing to the heterojunction.

Analysis and Optimization of the Static and Dynamic Characteristics of Head Frame

2011 ◽  
Vol 418-420 ◽  
pp. 2055-2059 ◽  
Author(s):  
Yu Lin Wang ◽  
Na Jin ◽  
Kai Liao ◽  
Rui Jin Guo ◽  
Hu Tian Feng
Keyword(s):  
Machine Tool ◽  
Dynamic Characteristics ◽  
Maximum Stress ◽  
Dynamic Performance ◽  
Mode Shapes ◽  
Cnc Machine ◽  
Static And Dynamic Characteristics ◽  
Maximum Deformation ◽  
Improvement Measures ◽  
Optimal Measure

The head frame is a key component which plays a supportive and accommodative role in the spindle system of CNC machine tool. Improving the static and dynamic characteristics has profound significance to the development of machine tool and product performance. The simplified finite element modal is established with ANSYS to carry out the static and modal analysis. The results showed that the maximum deformation of the head frame was 0.0066mm, the maximum stress was 3.94Mpa, the deformation of most region was no more than 0.0007mm, which all verified that the head frame had a good stiffness and deforming resistance; several improvement measures for dynamic performance were also proposed by analyzing the mode shapes, and the 1st order natural frequency increased 7.33% while the head frame mass only increased 1.58% applying the optimal measure, which improved the dynamic characteristics of the head frame effectively.

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