Modeling negative and positive temperature dependence of the gate leakage current in GaN high‐electron mobility transistors
2003 ◽
Vol 82
(18)
◽
pp. 3110-3112
◽
S. Arulkumaran
◽
T. Egawa
◽
H. Ishikawa
◽
T. Jimbo
2005 ◽
Vol 86
(25)
◽
pp. 253511
◽
P. Kordoš
◽
J. Bernát
◽
M. Marso
◽
H. Lüth
◽
F. Rampazzo
◽
...
Chi Sun
◽
Xiaoyu Ding
◽
Xing Wei
◽
Wenxin Tang
◽
Xiaodong Zhang
◽
...
2013 ◽
Vol 102
(11)
◽
pp. 113510
◽
Ling Xia
◽
Allen Hanson
◽
Timothy Boles
◽
Donghyun Jin
2002 ◽
Vol 41
(Part 1, No. 8)
◽
pp. 5125-5126
◽
Shinya Mizuno
◽
Yutaka Ohno
◽
Shigeru Kishimoto
◽
Koichi Maezawa
◽
Takashi Mizutani
2016 ◽
Vol 52
(2)
◽
pp. 157-159
S. Kim
◽
J.‐H. Ryou
◽
R.D. Dupuis
◽
H. Kim
2009 ◽
Vol 55
(1)
◽
pp. 356-361
◽
SuJin Kim
◽
DongHo Kim
◽
JaeMoo Kim
◽
KangMin Jung
◽
TaeGeun Kim
◽
...
2017 ◽
Vol 121
(4)
◽
pp. 044504
◽
Y. Li
◽
G. I. Ng
◽
S. Arulkumaran
◽
G. Ye
◽
Z. H. Liu
◽
...
Xiaoyu Ma
◽
Fei Yu
◽
Wanling Deng
◽
Junkai Huang
2014 ◽
Vol 32
(5)
◽
pp. 052201
◽
Lu Liu
◽
Yuyin Xi
◽
Shihyun Ahn
◽
Fan Ren
◽
Brent P. Gila
◽
...