scholarly journals Preparation and Characterizations of NiS/ZnS Bilayer Thinfilm by Chemical Bath Deposition Method

2021 ◽  
Vol 23 (10) ◽  
pp. 419-429
Author(s):  
J. Yuvaloshini ◽  
◽  
Ra. Shanmugavadivu ◽  
Keyword(s):  
Chemical Bath Deposition ◽  
Absorption Spectrometry ◽  
Hexagonal Wurtzite Structure ◽  
Nickel Chloride ◽  
Bath Temperature ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
Ultraviolet Emission ◽  
Glass Substrates ◽  
Excitonic Transition

NiS/ZnS thin films were grown by Chemical Bath Deposition (CBD) technique using eqimolar aqueous solutions of zinc chloride, nickel chloride and thiourea as precursor. Silicon glass substrates were placed in glass bottles with polypropylene autoclave screw caps containing the precursors described above, and the bath temperature is maintained at 95°C. X-ray diffraction 28/8 scans showed that the only crystallographic phase present was the hexagonal wurtzite structure. Scanning electron microscopy showed the formation of nanostructures, consisting of hexagonal structures of a few hundred nanometers. The photoluminescence spectra of NiS/ZnS bilayer were recorded at 18-295 K using a cw He-Cd laser (325 nm) and pulsed laser (266 nm). The NiS/ZnS nanostructure exhibit an ultraviolet emission band centered at ;:::; 3.87eV in the vicinity of the band edge, which is attributed to the well-known excitonic transition in ZnS. The optical properties such as refractive index, electrical and optical conductivities were determined by using UV- VIS absorption spectrometry. The band gap energy was determined as 1.45 eV.

Properties of CdS Thin Films Grown by Chemical Bath Deposition as a Function of Bath Temperature

2009 ◽  
Vol 609 ◽  
pp. 243-247 ◽  
Author(s):  
H. Moualkia ◽  
S. Hariech ◽  
M.S. Aida
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Bath Temperature ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Cds Thin Films ◽  
Direct Band

The present work deals with the preparation and characterization of cadmium sulfur (CdS) thin films. These films are prepared by chemical bath deposition on the well cleaned glass substrates. The thickness of the samples was measured by using profilometer DEKTAK, structural and optical properties were studied by X-ray diffraction analysis, and UV-visible spectrophotometry. The optical properties of the films have been investigated as a function of temperature. The band gap energy and Urbach energy were also investigated as a function of temperature. From the transmittance data analysis the direct band gap ranges from 2.21 eV to 2.34 eV. A dependence of band gap on temperature has been observed and the possible raisons are discussed. Transmission spectra indicates a high transmission coefficient (75 %). Structural analysis revealed that the films showed cubic structure, and the crystallite size decreased at a higher deposition temperature.

Characterization of MnS Thin Films Deposited by Chemical Bath Deposition

2019 ◽  
Vol 969 ◽  
pp. 433-438 ◽  
Author(s):  
Dattatraya K. Sonavane ◽  
S.K. Jare ◽  
M.A. Shaikh ◽  
R.V. Kathare ◽  
R.N. Bulakhe
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Band Gap Energy ◽  
Sulfur Source ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Double Beam

Glass substrates are used to deposit thin films utilizing basic and value effective chemical bath deposition (CBD) technique. The films were prepared from the mixture as solutions of manganous acetate tetrahydrate [C4H6MnO44H2O] as a manganese source, thiourea [(H2 N) 2 CS] as a sulfur source and triethanolamine (TEA) [(HOC2H4)3N] as a complexing agent.In the present paper the deposition was successfully done at 60 °C temperature. The absorption properties and band gap energy were determined employing double beam spectrophotometer. The optical band gap value calculated from absorption spectra of MnS thin film is found to be about 3.1eV.The MnS thin film was structurally characterized by X-ray Diffraction (XRD). The MnS thin film was morphologically characterized by Scanning Electron Microscopy (SEM) and elemental analysis was performed using EDS to confirm the formation of MnS.

Effect of bath temperature on the chemical bath deposition of PbSe thin films

1970 ◽  
Vol 6 (2) ◽  
pp. 126-132 ◽  
Author(s):  
Anuar Kassim ◽  
Tan Wee Tee ◽  
Ho Soon Min ◽  
Shanthi Monohorn ◽  
Saravanan Nagalingam
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Lead Nitrate ◽  
Bath Temperature ◽  
Band Gap Energy ◽  
Sodium Selenate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gap Energy

PbSe thin films are prepared by chemical bath deposition technique over microscope glass substrates from an aqueous acidic bath containing lead nitrate and sodium selenate. The influence of bath temperature on the properties of PbSe film is investigated. The X-ray diffraction analysis showed the deposited films were polycrystalline and having the (111) orientation. The surface morphology study revealed that the grains have cubic shape crystal. The band gap energy was decreased from 2.0 to 1.3 eV as the bath temperature was increased from 40 to 80°C. The films deposited at 80°C showed good crystallinity and uniformly distributed over the surface of substrate with larger grain sizes. Therefore, the optimum bath temperature is 80°C. Keywords: Lead selenide; X-ray diffraction; Band gap energy; Chemical bath deposition; Thin films DOI: 10.3126/kuset.v6i2.4021Kathmandu University Journal of Science, Engineering and Technology Vol.6. No II, November, 2010, pp.126-132

INVESTIGATING ANNEALING EFFECT ON OPTICAL PROPERTIES OF Cd0.8Zn0.2S THIN FILMS

2014 ◽  
Vol 21 (05) ◽  
pp. 1450073 ◽  
Author(s):  
SOMAYEH AZIZI ◽  
HAMID REZAGHOLIPOUR DIZAJI ◽  
MOHAMMAD HOSSEIN EHSANI ◽  
SEYED FEYZOLAH GHAVAMI MIRMAHALLE
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Hexagonal Wurtzite Structure ◽  
Band Gap Energy ◽  
Annealing Effect ◽  
Thin Layers ◽  
Optical Parameters ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Cd 0.8 Zn 0.2 S thin films deposited on glass substrates by thermal evaporation method were annealed at different temperatures for the first time in order to investigate annealing effect on optical properties. The compositional, structural of nanoparticles precursor synthesized using microwave irradiation method and optical properties of the films were studied using energy dispersive X-ray (EDX), X-ray diffraction, transmission electron microscopy (TEM), and UV-visible spectrophotometer techniques. The annealed films were found to have hexagonal Wurtzite structure with strong preferential orientation along the (002) diffraction peak. Important optical parameters such as extinction coefficient and refractive index revealed the effect of heat treatment on the deposited thin layers. A reduction in the band gap energy from 2.41 eV to 2.29 eV was observed for the annealed samples.

Structural Properties of Ag-Based Chalcopyrite Compound Thin Films for Solar Cells

2005 ◽  
Vol 865 ◽  
Author(s):  
Hiroki Ishizaki ◽  
Keiichiro Yamada ◽  
Ryouta Arai ◽  
Yasuyuki Kuromiya ◽  
Yukari Masatsugu ◽  
...  
Keyword(s):  
Thin Films ◽  
Rietveld Analysis ◽  
Atomic Ratio ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Crystallographic Property ◽  
Chalcopyrite Compound

AbstractAgGa5Se8 and Ag(In1-xGax)Se2 thin films with different Ag/Ga atomic ratios have been deposited on the corning 1737 glass substrates by molecular beam epitaxy (MBE) system. This crystallographic property of AgGa5Se8 thin films has been investigated by x-ray diffraction and rietveld analysis. These films had the tetragonal structure with the space group of P-42m, regardless of Ag/Ga atomic ratio. The lattice parameters and the optical band gap energy decreased with an increase in the Ag/Ga atomic ratio. Thus, the structural and optical properties of these AgGa5Se8 thin films were controlled by the Ag/Ga atomic ratio.

STUDY OF CHEMICAL BATH DEPOSITION OF ZnS THIN FILMS WITH SUBSTRATE VIBRATION

2008 ◽  
Vol 15 (06) ◽  
pp. 821-827 ◽  
Author(s):  
Z. Q. BIAN ◽  
X. B. XU ◽  
J. B. CHU ◽  
Z. SUN ◽  
Y. W. CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Hydrazine Hydrate ◽  
Chemical Bath Deposition ◽  
Visible Region ◽  
Hexagonal Structure ◽  
Complexing Agents ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Alkaline Conditions ◽  
Zns Films

An improved chemical bath deposition (CBD) technique has been provided to prepare zinc sulfide ( ZnS ) thin films on glass substrates deposited at 80–82°C using a mixed aqueous solution of zinc sulfate, ammonium sulfate, thiourea, hydrazine hydrate, and ammonia at the alkaline conditions. Both the traditional magnetic agitation and the substrates vibration by hand frequently were done simultaneously during the deposition. The substrates vibration reduced the formation and residence of gas bubbles on the glass substrates during growth and resulted in growth of clean ZnS thin films with high quality. Ammonia and hydrazine hydrate were used as complexing agents. It is found that hydrazine hydrate played an important role in growth of ZnS films. The structure and microstructure of ZnS films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-vis spectroscopic methods. The XRD showed a hexagonal structure. The formed ZnS films exhibited good optical properties with high transmittance in the visible region and the band gap value was estimated to be 3.5–3.70 eV.

scholarly journals SYNTHESIS AND CHARACTERIZATION STUDY OF HGXCR2-X S4 COMPOSITE THIN FILMS PREPARED BY CHEMICAL BATH DEPOSITION TECHNIQUE

2021 ◽  
Vol 9 (4) ◽  
pp. 757-763
Author(s):  
Harishchandra B. Patil ◽  
◽  
Rajendrakumar B. Ahirrao ◽  
Vijay N. Pawar ◽  
◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Measurement Techniques ◽  
Bath Temperature ◽  
Electrical Measurement ◽  
Scanning Electron Micrographs ◽  
Glass Substrates ◽  
Characterization Study ◽  
Diffraction Patterns ◽  
Power Measurements

The ternary thin films of composite HgxCr2-xS4 (x = 0.6) have been deposited by simple chemical bath deposition (CBD) technique on glass substrate. The thin films have been deposited at optimized conditions pH at 10 0.1, bath temperature 650C, deposition time 120 minutes. The films were uniform and adherent to glass substrates. They were characterized by structural, optical, and electrical measurement techniques. According to their X-ray diffraction patterns HgxCr2-xS4(x = 0.6) films are crystalline with band gap of 2.4 eV. Scanning electron micrographs showed that the substrates were well covered with films no cracks or pinholes were observed. The electrical resistivity of the films is found to be 1.3703 x 103 Ω-cm to 2.1243 x 103 Ω-cm at temperature range 3030k to 4230K. According to thermoelectric power measurements HgxCr2-xS4(x = 0.6) thin films are of n-type nature.

scholarly journals Annealing Effects on Photocatalytic Activity of Zn0.2Cd0.8S Films Prepared by Chemical Bath Deposition

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Yi-Feng Chai ◽  
Ling-Ling Wang ◽  
Gui-Fang Huang ◽  
Wei-Qing Huang ◽  
Yan-Hua Zhu
Keyword(s):  
Photocatalytic Activity ◽  
Heating Rate ◽  
Chemical Bath Deposition ◽  
Visible Region ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Mean Grain Size ◽  
Annealing Effects ◽  
The Mean

Zn0.2Cd0.8S alloyed films were prepared on glass substrates at room temperature using chemical bath deposition method. The obtained films were annealed at temperatures ranging from 200°C to 500°C with heating rate of 5°C/min and annealed at 400°C with heating rate of 2°C/min and 10°C/min. The films were characterized by X-ray diffraction, scanning electron microscopy, energy-dispersive spectroscopy, and UV-VIS spectrophotometer. The increasing of annealing temperature increases the crystallinity and the mean grain size of Zn0.2Cd0.8S alloyed films and significantly enhances the absorption in the visible region. The efficient visible light photocatalytic activity for annealed Zn0.2Cd0.8S alloyed films is associated with the larger size grain and the higher crystallinity.

Spectral Features of Zn1-xMgxO Thin Films Synthesized by the Sol-Gel Route

2013 ◽  
Vol 669 ◽  
pp. 296-301 ◽  
Author(s):  
Feng Lin Xian ◽  
Xiang Yin Li
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Phase Segregation ◽  
Hexagonal Wurtzite Structure ◽  
Blue Shift ◽  
Content Increase ◽  
Ultraviolet Emission ◽  
Glass Substrates ◽  
Structure Morphology ◽  
Probe Microscope

Zn1-xMgxO (x=0, 0.05, 0.1, 0.2 and 0.3, respectively) thin films have been synthesized by sol-gel method on glass substrates. The structure, morphology and optical properties of the samples have been studied by X-ray diffractonmeter (XRD), scanning probe microscope, UV-visible spectrophotometer, fluorescence spectrophotometer and spectroscopic ellipsometer, respectively. The XRD result shows that all the films have hexagonal wurtzite structure; no phase segregation is observed. The surfaces of Zn1-xMgxO thin films are smooth and the root mean square (RMS) roughness of the samples is only several nanometers. The transmittance spectra reveal that all samples have high transmittance above 90%, with Mg doping content increase, the optical band gap increases from 3.27eV to 3.77eV. The photoluminescence spectra show that all samples have two emission peaks in ultraviolet and violet region, a blue shift of ultraviolet emission is observed. The refractive indexes of all samples decrease with the increase of wavelength ranging from 350nm to 900nm. The refractive index changes apparently by varying Mg content, which has potential application in research of optical materials and the design of optical devices.

scholarly journals Effects of Deposition Time on the Chemical Bath-deposited CuS Thin Films

1970 ◽  
Vol 25 ◽  
pp. 2-8 ◽  
Author(s):  
K Anuar ◽  
W. T. Tan ◽  
N. Saravanan ◽  
L. K. Khor ◽  
S. M. Ho
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Indium Tin Oxide ◽  
Deposition Time ◽  
Sodium Thiosulfate ◽  
Deposition Process ◽  
Chemical Society ◽  
Band Gap Energy ◽  
Oxide Glass ◽  
Glass Substrates

The chemical bath deposition technique was used to deposit thin films of coppersulphide onto indium tin oxide glass substrates. The bath composition included copperchloride which was the source of Cu2+ and sodium thiosulfate which supplied the S2- ions. Xraydiffraction and atomic force microscopy were used to investigate structural andmorphological characterization, respectively. The influence of deposition time was studiedto determine the optimum condition for deposition process. The deposited CuS films showedhexagonal structure. The number of peaks attributable to CuS increased as the depositiontime was increased to 16 hours based on XRD data. AFM images revealed that the chemicalbath-deposited films for 16 hours showed more homogeneous and uniform compared withother deposition times, and the highest absorbance value was obtained for the filmsdeposited at this period. The band gap energy decreased from 2.9 to 2.45 eV when thedeposition time was increased from 8 to 20 hours.Keywords: Chemical bath deposition, copper sulphide, thin films, solar cells.DOI: 10.3126/jncs.v25i0.3276Journal of Nepal Chemical Society Volume 25, 2010 pp 2-8

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