Hybrid bypass technique to mitigate leakage current in the grid-tied inverter

The extensive use of fossil fuel is destroying the balance of nature that could lead to many problems in the forthcoming era. Renewable energy resources are a ray of hope to avoid possible destruction. Smart grid and distributed power generation systems are now mainly built with the help of renewable energy resources. The integration of renewable energy production system with the smart grid and distributed power generation is facing many challenges that include addressing the issue of isolation and power quality. This paper presents a new approach to address the aforementioned issues by proposing a hybrid bypass technique concept to improve the overall performance of the grid-tied inverter in solar power generation. The topology with the proposed technique is presented using traditional H5, oH5 and H6 inverter. Comparison of topologies with literature is carried out to check the feasibility of the method proposed. It is found that the leakage current of all the proposed inverters is 9 mA and total harmonic distortion is almost about 2%. The proposed topology has good efficiency, common mode and differential mode characteristics.

Leakage Current Mitigation of Photovoltaic System Using Optimized Predictive Control for Improved Efficiency

This paper proposes an optimized predictive control strategy to mitigate the potential leakage current of grid-tied photovoltaic (PV) systems to improve the lifespans of PV modules. In this work, the PV system is controlled with an optimized predictive control algorithm that selects the switching voltage vectors intelligently to reduce the number of computational burdens. Thus, it improves the dynamic performance of the overall system. This is achieved through a specific cost function that minimizes the change in common-mode voltage generated by the parasitic capacitance of PV modules. The proposed controller does not require any additional modulation schemes. Normalization techniques and weighting factors are incorporated to obtain improved results. The steady state and dynamic performance of the proposed control scheme is validated in this work through simulations and a 600 W experimental laboratory prototype.

Cold Atmospheric Pressure Plasma Jet Operated in Ar and He: From Basic Plasma Properties to Vacuum Ultraviolet, Electric Field and Safety Thresholds Measurements in Plasma Medicine

Application desired functionality as well as operation expenses of cold atmospheric pressure plasma (CAP) devices scale with properties like gas selection. The present contribution provides a comparative investigation for a CAP system operated in argon or helium at different operation voltages and distance to the surface. Comparison of power dissipation, electrical field strength and optical emission spectroscopy from vacuum ultraviolet over visible up to near infrared ((V)UV-VIS-NIR) spectral range is carried out. This study is extended to safety relevant investigation of patient leakage current, induced surface temperature and species density for ozone (O3) and nitrogen oxides (NOx). It is found that in identical operation conditions (applied voltage, distance to surface and gas flow rate) the dissipated plasma power is about equal (up to 10 W), but the electrical field strength differs, having peak values of 320 kV/m for Ar and up to 300 kV/m for He. However, only for Ar CAP could we measure O3 up to 2 ppm and NOx up to 7 ppm. The surface temperature and leakage values of both systems showed different slopes, with the biggest surprise being a constant leakage current over distance for argon. These findings may open a new direction in the plasma source development for Plasma Medicine.

Ultra-fast data sanitization of SRAM by back-biasing to resist a cold boot attack

Although SRAM is a well-established type of volatile memory, data remanence has been observed at low temperature even for a power-off state, and thus it is vulnerable to a physical cold boot attack. To address this, an ultra-fast data sanitization method within 5 ns is demonstrated with physics-based simulations for avoidance of the cold boot attack to SRAM. Back-bias, which can control device parameters of CMOS, such as threshold voltage and leakage current, was utilized for the ultra-fast data sanitization. It is applicable to temporary erasing with data recoverability against a low-level attack as well as permanent erasing with data irrecoverability against a high-level attack.

Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors

The reliability instability of inhomogeneous Schottky contact behaviors of Ni/Au and Pt/Ti/Pt/Au gate contacts on AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated via off-state stress and temperature. Under the off-state stress condition, Pt/Ti/Pt/Au HEMT showed abruptly reduced reverse leakage current, which improved the Schottky barrier height (SBH) from 0.46 to 0.69 eV by suppression of the interfacial donor state. As the temperature increased, the reverse leakage current of the Pt/Ti/Pt/Au AlGaN/GaN HEMT at 308 K showed more reduction under the same off-state stress condition while that of the Ni/Au AlGaN/GaN HEMT increased. However, with temperatures exceeding 308 K under the same off-state stress conditions, the reverse leakage current of the Pt/Ti/Pt/Au AlGaN/GaN HEMT increases, which can be intensified using the inverse piezoelectric effect. Based on this phenomenon, the present work reveals the necessity for analyzing the concurrent SBH and reliability instability due to the interfacial trap states of the MS contacts.

Frequency dependence on polarization switching measurement in ferroelectric capacitors

Ferroelectric hysteresis loop measurement under high driving frequency generally faces great challenges. Parasitic factors in testing circuits such as leakage current and RC delay could result in abnormal hysteresis loops with erroneous remnant polarization (P r) and coercive field (E c). In this study, positive-up-negative-down (PUND) measurement under a wide frequency range was performed on a 10-nm thick Hf0.5Zr0.5O2 ferroelectric film. Detailed analysis on the leakage current and RC delay was conducted as the polarization switching occurs in the FE capacitor. After considering the time lag caused by RC delay, reasonable calibration of current response over the voltage pulse stimulus was employed in the integral of polarization current over time. In such a method, rational P–V loops measured at high frequencies (>1 MHz) was successfully achieved. This work provides a comprehensive understanding on the effect of parasitic factors on the polarization switching behavior of FE films.