dimensional electron
Recently Published Documents


TOTAL DOCUMENTS

6839
(FIVE YEARS 482)

H-INDEX

151
(FIVE YEARS 10)

2022 ◽  
Vol 12 (1) ◽  
Author(s):  
Janusz E. Jacak

AbstractUsing the braid symmetry we demonstrate the derivation of the Laughlin function for the main hierarchy 1/q of FQHE in the lowest Landau level of two-dimensional electron system with a mathematical rigour. This proves that the derivation of Laughlin function unavoidably requires some topological elements and cannot be completed within a local quantum mechanics, i.e., without global topological constraints imposed. The method shows the way for the generalization of this function onto other fractions from the general quantum Hall hierarchy. A generalization of the Laughlin function is here formulated.


Author(s):  
Joseph Hitchen ◽  
Iryna Andrusenko ◽  
Charlie L. Hall ◽  
Enrico Mugnaioli ◽  
Jason Potticary ◽  
...  

2022 ◽  
Vol 105 (4) ◽  
Author(s):  
A. M. Zarezin ◽  
V. M. Muravev ◽  
P. A. Gusikhin ◽  
A. A. Zabolotnykh ◽  
V. A. Volkov ◽  
...  

Nanophotonics ◽  
2022 ◽  
Vol 0 (0) ◽  
Author(s):  
Sen Gong ◽  
Hongxin Zeng ◽  
Qianyu Zhang ◽  
Chunyang Bi ◽  
Lan Wang ◽  
...  

Abstract Terahertz switch is one of the key components of future communication, radar, and imaging systems. Limited by the strong electromagnetic coupling in subwavelength scale, the traditional terahertz switch is difficult to meet the increasing application requirements. In this paper, a parallel topology terahertz meta-chip switch based on the combination of equivalent circuit theory and electromagnetic coupling is proposed. The meta-chip is realized by adjusting the density of two-dimensional electron gas of InP-HEMT, which converts the electromagnetic coupling between the microstructure and microstrips. By using the 90 nm gate length InP-HEMT process, a C-ring loaded meta-chip is fabricated and tested in this paper. The results show an insertion loss lower than 1 dB with a 10 dB switching ratio, which is 20% higher than that without C-ring while ensuring the rather low insertion loss. It shows that the presented mechanism has positive significance for the design of terahertz band functional devices.


Coatings ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 30
Author(s):  
Giulia Venditti ◽  
Marco Grilli ◽  
Sergio Caprara

LaAlO3/SrTiO3 interfaces are a nice example of a two-dimensional electron gas, whose carrier density can be varied by top- and back-gating techniques. Due to the electron confinement near the interface, the two-dimensional band structure is split into sub-bands, and more than one sub-band can be filled when the carrier density increases. These interfaces also host superconductivity, and the interplay of two-dimensionality, multi-band character, with the possible occurrence of multi-gap superconductivity and disorder calls for a better understanding of finite-bandwidth effects on the superconducting critical temperature of heavily disordered multi-gap superconductors.


2021 ◽  
Vol 137 (1) ◽  
Author(s):  
M. A. Hidalgo

AbstractUp to almost the last two decades all the experimental results concerning the quantum Hall effect (QHE), i.e. the observation of plateaux at integer or fractional (FQHE) values of the constant h/e2, were related to quantum-wells in semiconductor heterostructures. However, more recently, a renewed interest in revisiting these phenomena has arisen thanks to the observation of entirely similar effects in graphene and topological insulators. In this paper we show an approach encompassing all these QHEs using the same theoretical frame, entailing both Hall effect plateaux and Shubnikov-de Haas oscillations. Moreover, the model also enables the analysis of both phenomena as a function not only of the magnetic field but the gate voltage as well. More specifically, in the light of the approach, the FQHE in any two-dimensional electron system appears to be an effect of the breaking of the degeneration of every Landau level, n, as a result of the electrostatic interaction involved, and being characterized by the set of three integer numbers (n, p, q), where p and q have clear physical meanings too.


2021 ◽  
Vol 66 (12) ◽  
pp. 1058
Author(s):  
V.V. Kaliuzhnyi ◽  
O.I. Liubchenko ◽  
M.D. Tymochko ◽  
Y.M. Olikh ◽  
V.P. Kladko ◽  
...  

A method of dynamic deformations has been proposed as a useful informative tool in the characterization of transportation properties of a two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is found that the exposing of a sample to ultrasonic vibrations results in the persistent acousto-conductivity (PAC) which was observed up to room temperatures. The PAC behaves itself like persistent photoconductivity (PPC), and the carrier density in the 2DEG channel is primarily contributed by the transfer of electrons excited from traps (like DX centers) as a result of their reconstruction under the ultrasonic loading.


Sign in / Sign up

Export Citation Format

Share Document