oxidation of co
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Vol 521 ◽  
pp. 230966
Xiao Yang ◽  
Minjian Ma ◽  
Chunming Xu ◽  
Rongzheng Ren ◽  
Jinshuo Qiao ◽  

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ChemCatChem ◽  
2021 ◽  
Dmitry Antonovich Svintsitskiy ◽  
Nikolai A. Sokovikov ◽  
Elena M. Slavinskaya ◽  
Elizaveta A. Fedorova ◽  
Andrei I. Boronin

2021 ◽  
Vol 11 (1) ◽  
Tomohiro Nozaki ◽  
Shingo Tamaru ◽  
Makoto Konoto ◽  
Takayuki Nozaki ◽  
Hitoshi Kubota ◽  

AbstractThere is urgent need for spintronics materials exhibiting a large voltage modulation effect to fulfill the great demand for high-speed, low-power-consumption information processing systems. Fcc-Co (111)-based systems are a promising option for research on the voltage effect, on account of their large perpendicular magnetic anisotropy (PMA) and high degree of freedom in structure. Aiming to observe a large voltage effect in a fcc-Co (111)-based system at room temperature, we investigated the voltage-induced coercivity (Hc) change of perpendicularly magnetized Pt/heavy metal/Co/CoO/amorphous TiOx structures. The thin CoO layer in the structure was the result of the surface oxidation of Co. We observed a large voltage-induced Hc change of 20.2 mT by applying 2 V (0.32 V/nm) to a sample without heavy metal insertion, and an Hc change of 15.4 mT by applying 1.8 V (0.29 V/nm) to an Ir-inserted sample. The relative thick Co thickness, Co surface oxidation, and large dielectric constant of TiOx layer could be related to the large voltage-induced Hc change. Furthermore, we demonstrated the separate adjustment of Hc and a voltage-induced Hc change by utilizing both upper and lower interfaces of Co.

Thanh Son Cam ◽  
Shamil Omarovich Omarov ◽  
Maria Igorevna Chebanenko ◽  
Svetlana Georgievna Izotova ◽  
Vadim Igorevich Popkov

2021 ◽  
Vol 57 (6) ◽  
pp. 1172-1179
I. V. Lukiyanchuk ◽  
M. S. Vasilyeva ◽  
A. A. Sergeev ◽  
A. V. Nepomnyashchii ◽  
M. M. Serov ◽  

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