Corrigendum to "Simulation and Optimization of Lead-Based Perovskite Solar Cells with Cuprous Oxide as a P-type Inorganic Layer [J. Nig. Soc. Phys. Sci. 1 (2019) 72–81, https://doi.org/10.46481/jnsps.2019.13]"

The version in the original Article has an error in the name of the principal author Eli Danladi which was given incorrectly as D. Eli. We highly regret this.

The Relationship Between Water Transmission Rate and Defects on the Film Based on the Defect Analysis Using Fluorescent Calcein Probe

The most critical issue on flexible electronics such as organic solar cell, OLED, and flexible displays, is the protection of core active materials from the degradation by water and oxygen. The water vapor transmission rate (WVTR), the main characteristics of barrier films, is closely related to defect density in inorganic layers constructed in the film. In this study, a calcein fluorescent probe is used to examine the relationship between the water vapor transmission rate (WVTR) and the defect density of the film coated the inorganic oxide layer. By using the fluorescence characteristics of calcein dye molecules, the calcein can be used for the evaluation of water vapor transmission rate. The result shows that the defect density is linearly increasing with the water vapor transmission rate of barrier films. Furthermore, it is shown that the defect density is inversely proportional to the thickness of the inorganic layer of Al2O3. Based on these results, it is suggested that the defect density measurement of the inorganic layer can predict the water vapor transmission rate of the barrier film.

Fabrication and Characterization of the Barrier Film Having Excellent Moisture Barrier Characteristics Using Polysilazane

Organic solar cell and OLED display devices are very sensitive to moisture, which leading to a fast degradation by the exposure to moisture and oxygen in the air. Therefore, in order to enhance the stability of the devices, a barrier film having WVTR (Water Vapor Transmission Rate) of 10−4 to 10−6 g/m2/day is required. In order to prepare the barrier film with excellent moisture blocking characteristics, perhydro polysilazane (PHPS) is used, which is developed to prepare an insulating film for semiconductors. Also a catalyst is added to lower the curing temperature to 100 °C or less. The result shows that the polysilazane is cured and converted to SiO2 under 100 °C in 30 min. WVTR of the polysilazane coated film is estimated to be 2.1×10−2 g/m2/day. In addition, when the inorganic layer such as SiO2 and Al2O3 is deposited on the planarization layer, the film shows excellent moisture blocking characteristics having WVTR to be 7.9×10−5 g/m2/day.