A Novel Piezoelectric RF-MEMS Resonator with Enhanced Quality Factor

This work presents a novel ultra-high frequency (UHF) Lamb mode Aluminum Nitride (AlN) piezoelectric resonator with enhanced quality factors (Q). With slots introduced in the vicinity of the tether support end, the elastic waves leaking from the tether sidewalls can be reflected, which effectively reduces the anchor loss while retaining size compactness and mechanical robustness. Comprehensive analysis was carried out to provide helpful guidance for obtaining optimal slot designs. For various resonators with frequencies ranging from 630 MHz to 1.97 GHz, promising Q enhancements up to 2 times have all been achieved. The 1.97 GHz resonator implemented excellent f × Q product up to 6.72 × 1012 and low motional resistance down to 340 Ω, which is one of the highest performances among the reported devices. The devices with enhanced Q values as well as compact size could have potential application in advanced RF front end transceivers.

Figure of Merit Enhancement of Laterally Vibrating RF-MEMS Resonators via Energy-Preserving Addendum Frame

This paper examines a new technique to improve the figure of merit of laterally vibrating RF-MEMS resonators through an energy-preserving suspended addendum frame structure using finite element analysis. The proposed suspended addendum frame on the sides of the resonant plate helps as a mechanical vibration isolator from the supporting substrate. This enables the resonator to have a low acoustic energy loss, resulting in a higher quality factor. The simulated attenuation characteristics of the suspended addendum frame are up to an order of magnitude larger than those achieved with the conventional structure. Even though the deployed technique does not have a significant impact on increasing the effective electromechanical coupling coefficient, due to a gigantic improvement in the unloaded quality factor, from 4106 to 51,136, the resonator with the suspended frame achieved an 11-folds improvement in the figure of merit compared to that of the conventional resonator. Moreover, the insertion loss was improved from 5 dB down to a value as low as 0.7 dB. Furthermore, a method of suppressing spurious mode is demonstrated to remove the one incurred by the reflected waves due to the proposed energy-preserving structure.

Application of probability-based multi-objective optimization in material engineering

Introduction/purpose: Althought many methods have been proposed to deal with the problem of material selection, there are inherent defects of additive algorithms and subjective factors in such algorithms. Recently, a probability-based multi-objective optimization was developed to solve the inherent shortcomings of the previous methods, which introduces a novel concept of preferable probability to reflect the preference degree of the candidate in the optimization. In this paper, the new method is utilized to conduct an optimal scheme of the switching material of the RF-MEMS shunt capacitive switch, the sintering parameters of natural hydroxyapatite and the optimal design of the connecting claw jig. Methods: All performance utility indicators of candidate materials are divided into two groups, i.e., beneficial or unbeneficial types for the selection process; each performance utility indicator contributes quantitatively to a partial preferable probability and the product of all partial preferable probabilities makes the total preferable probability of a candidate, which transfers a multi-objective optimization problem into a single-objective optimization one and represents a uniquely decisive index in the competitive selection process. Results: Cu is the appropriate material in the material selection for RF - MEMS shunt capacitive switches; the optimal sintering parameters of natural hydroxyapatite are at 1100°C and 0 compaction pressure; and the optimal scheme is scheme No 1 for the optimal design of a connecting claw jig. Conclusion: The probability-based multi-objective optimization can be easily used to deal with an optimal problem objectively in material engineering.

Design and Fabrication of a Ka Band RF MEMS Switch with High Capacitance Ratio and Low Actuation Voltage

In this paper a high capacitance ratio and low actuation voltage RF MEMS switch is designed and fabricated for Ka band RF front-ends application. The metal-insulator-metal (MIM) capacitors is employed on a signal line to improve the capacitance ratio, which will not degrade the switch reliability. To reduce the actuation voltage, a low spring constant bending folding beam and bilateral drop-down electrodes are designed in the MEMS switch. The paper analyzes the switch pull-in model and deduces the elastic coefficient calculation equation, which is consistent with the simulation results. The measured results indicated that, for the proposed MEMS switch with a gap of 2 μm, the insertion loss is better than −0.5 dB and the isolation is more than −20 dB from 25 to 35 GHz with an actuation voltage of 15.8 V. From the fitted results, the up-state capacitance is 6.5 fF, down-state capacitance is 4.3 pF, and capacitance ratios is 162. Compared with traditional MEMS capacitive switches with dielectric material Si3N4, the proposed MEMS switch exhibits high on/off capacitance ratios of 162 and low actuation voltage.

RF MEMS electrostatically actuated tunable capacitors and their applications: a review

This paper reviews the recent developments of micro-electromechanical system (MEMS) based electrostatically actuated tunable capacitors. MEMS based tunable capacitors (MBTCs) are important building blocks in advanced radio frequency communication systems and portable electronics. This is due to their excellent performance compared to solid state counterpart. Different designs, tuning mechanisms, and performance parameters of MBTCs are discussed, compared, and summarized. Several quantitative comparisons in terms of tuning range, quality factor (Q factor), and electrodes configurations are presented, which provide deep insight into different design studies, assists in selecting designs, and layouts that best suit various applications. We also highlight recent modern applications of tunable capacitors, such as mobile handsets, internet of things, communication sensors, and 5G antennas. Finally, the paper discusses different design approaches and proposes guidelines for performance improvement.

High-performance inline RF MEMS switch for application in 5G mobile networks

This article presents the results of the design and analysis of a radio-frequency switch made using microelectromechanical systems technology. The device is the capacitive switch with a hybrid type of contact, in which the movable electrode of the structure – the metal membrane is part of the microwave signal line of the coplanar waveguide. The switch design is characterized by a high capacitance ratio and low contact resistance. The zig-zag elastic suspension is used to reduce the value of the pull-down voltage – 2 V and the switching time ∼ 7 us. The central resonant frequency of the switch is 3.8 GHz. In this case, in the open state, the value of the insertion loss is not more than -0.2 dB and the isolation value in the close state is not less than -55 dB. The effective frequency range is the S-band, as well as the C-, X- and Ku-band, in which the isolation value is at least -30 dB. The presented inline RF MEMS switch is suitable for use in various types of ground and satellite communications, in particular for devices and systems of 5G mobile networks.

Design, Evaluation and Analysis of a Novel H-Shaped Capacitive RF MEMS Switch

In this paper, absolute evaluation of Radio Frequency Micro Electromechanical System (RF MEMS) to improve parameters like high actuation voltage and low switching time, by introducing a new fixed - fixed RF MEMS capacitive switch. The proposed switch designed step-by-step evaluation of the plane beam, a novel structure of beam, and deposit the perforations and meanders to reducethe pull-in voltage. All the RF MEMS switch design parameters arestudy using the COMSOL Multiphysics FEM (Finite Element Model) tool. The proposed RF MEMS switch express low pull-in voltageof 4.75V and good return, insertion, and isolation losses in both upstate and downstate conditions are >10dB, below 0.1dB and 60dB, respectively. The dielectric layer as silicon nitride (Si3N4), beam as a gold material. The RLC values are extracted by using lumped model design. The RF MEMS shunt switch (capacitance, inductance, and resistance) of the MEMS bridge are accurately evaluated from the S-parameter analysis. The computational and simulated results are good agreement with each other, which indicates the validity of the proposed switch for K (18-26) GHz band applications.