Broadband Performance Assessment of an RF Power Transistor Employing the Real Frequency Technique

selected active device is essential to design an RF power amplifier for optimum gain and power added efficiency. As they are obtained, these impedances may not be realizable network functions over the desired frequency band to yield the input and the output matching networks for the amplifier. Therefore, in this paper, first, we introduce a new method to test if a given impedance is realizable. Then, a novel “Real Frequency Line Segment Technique” based numerical procedure is introduced to assess the gain-bandwidth limitations of the given source and load impedances, which in turn results in the ultimate RF-power intake/ delivering performance of the amplifier. During the numerical performance assessments process, a robust tool called “Virtual Gain Optimization” is presented. Finally, a new definition called “Power-Performance-Product” is introduced to measure the quality of an active device. Examples are presented to test the realizability of the given source/load pull data and to assess the gain-bandwidth limitations of the given source/load pull impedances for a 45W-GaN power transistor, namely “Cree CG2H40045”, over 0.8 -3.8 GHz bandwidth.

Broadband Performance Assessment of an RF Power Transistor Employing the Real Frequency Technique

selected active device is essential to design an RF power amplifier for optimum gain and power added efficiency. As they are obtained, these impedances may not be realizable network functions over the desired frequency band to yield the input and the output matching networks for the amplifier. Therefore, in this paper, first, we introduce a new method to test if a given impedance is realizable. Then, a novel “Real Frequency Line Segment Technique” based numerical procedure is introduced to assess the gain-bandwidth limitations of the given source and load impedances, which in turn results in the ultimate RF-power intake/ delivering performance of the amplifier. During the numerical performance assessments process, a robust tool called “Virtual Gain Optimization” is presented. Finally, a new definition called “Power-Performance-Product” is introduced to measure the quality of an active device. Examples are presented to test the realizability of the given source/load pull data and to assess the gain-bandwidth limitations of the given source/load pull impedances for a 45W-GaN power transistor, namely “Cree CG2H40045”, over 0.8 -3.8 GHz bandwidth.

Analysis of Electromagnetic Interference and Shielding in the μLED Optrode Based on Finite Element Method

Monolithic integrated μLED optrode has promising applications in optogenetics due to their ability to achieve more optical channels in a smaller footprint. The current used to drive the μLED will cause electromagnetic interference (EMI) noise to the recording electrodes at a very close distance. Utilizing a grounded metal shielding layer between the active device and the electrode can potentially reduce the interference. In this paper, multi-dimensional μLED optrode models are set up according to the real device. By numerically analyzing the electromagnetic interference between the μLED and recording electrodes, several optimized shielding schemes are evaluated by simulations and experiments. Some important process and layout parameters that may influence the shielding effect are studied through the finite element method (FEM). Different circuit models based on the corresponding test environment are built to analyze the simulation and experiment results. A new PCB with a shielding layer has been designed and initially verified. The proposed novel computational model can analyze EMI quantitatively, which could facilitate the design of low-noise μLED optrode with reasonable shielding and packaging.

A Real-world Experience of Atrioventricular Synchronous Pacing with Leadless Ventricular Pacemakers

Aims: The MicraTM transcatheter pacing system (TPS) (Medtronic) is the only leadless pacemaker that promotes atrioventricular (AV) synchrony via accelerometer-based atrial sensing. Data regarding the real-world experience with this novel system are currently lacking. We sought to characterize patients undergoing MicraTM -AV implants, describe percentage AV synchrony achieved, and analyze the causes for suboptimal AV synchrony. Methods: In this retrospective cohort study, electronic medical records from 56 consecutive patients undergoing MicraTM -AV implants at the Mayo Clinic sites in Minnesota, Florida, and Arizona with a minimum follow-up of 3 months were reviewed. Demographic data, comorbidities, echocardiographic data, and clinical outcomes were compared among patients with and without atrial synchronous-ventricular pacing (AsVP) ≥70%. Results: Fifty-six percent of patients achieved AsVP ≥70%. Patients with adequate AsVP had smaller body mass indices, a lower proportion of congestive heart failure and pulmonary hypertension. Echocardiographic parameters and procedural characteristics were similar across the two groups. Active device troubleshooting was associated with higher AsVP. The likely reasons for low AsVP were persistent atrial arrhythmias, small A4-wave amplitude, and inadequate device reprogramming. Importantly, in patients with low AsVP, subjective clinical worsening was not noted during follow-up. Conclusion: With the increasing popularity of leadless PM, it is paramount for device implanting teams to be familiar with common predictors of AV synchrony and troubleshooting with MicraTM -AV devices.

Single Commercially Available IC-Based Electronically Controllable Voltage-Mode First-Order Multifunction Filter with Complete Standard Functions and Low Output Impedance

This paper presents the design of a voltage-mode three-input single-output multifunction first-order filter employing commercially available LT1228 IC for easy verification of the proposed circuit by laboratory measurements. The proposed filter is very simple, consisting of a single LT1228 as an active device with two resistors and one capacitor. The output voltage node is low impedance, resulting in an easy cascade-ability with other voltage-mode configurations. The proposed filter provides four filter responses: low-pass filter (LP), high-pass filter (HP), inverting all-pass filter (AP−), and non-inverting all-pass filter (AP+) in the same circuit configuration. The selection of output filter responses can be conducted without additional inverting or double gains, which is easy to be controlled by the digital method. The control of pole frequency and phase response can be conducted electronically through the bias current (IB). The matching condition during tuning the phase response with constant voltage gain is not required. Moreover, the pass-band voltage gain of the LP and HP functions can be controlled by adjusting the value of resistors without affecting the pole frequency and phase response. Additionally, the phase responses of the AP filters can be selected as both lagging or leading phase responses. The parasitic effects on the filtering performances were also analyzed and studied. The performances of the proposed filter were simulated and experimented with a ±5 V voltage supply. For the AP+ experimental result, the leading phase response for 1 kHz to 1 MHz frequency changed from 180 to 0 degrees. For the AP− experimental result, the lagging phase response for 1 kHz to 1 MHz frequency changed from 0 to −180 degrees. The design of the quadrature oscillator based on the proposed first-order filter is also included as an application example.

Optimization of Focused Ion Beam Patterning Parameters for Direct Integration of Plasmonic Nanostructures on Silicon Photodiodes

The possibility of integrating plasmonic nanostructures directly on an active device, such as a silicon photodetector, is a challenging task of interest in many applications. Among the available nanofabrication techniques to realize plasmonic nanostructures, Focused Ion Beam (FIB) is surely the most promising, even if it is characterized by certain limitations, such as ion implantation in the substrate. In this work, we demonstrate the direct integration of plasmonic nanostructures directly on an active Si-photodetector by patterning a silver film with FIB. To avoid ion implantation and to therefore guarantee unaltered device behavior, both the patterning parameters and the geometry of the nanostructures were implemented by Montecarlo and Finite-Difference Time-Domain simulations.

Respimat as the new standard for inhalation therapy devices

The effectiveness of inhalation therapy can be significantly reduced by a number of problems. For example, inhalation technique errors can reduce the dose delivered by 22-95% compared to the optimal value in patients with technical errors in the use of the inhaler. Sub-optimal inspiratory flow rates in a number of patients with chronic obstructive pulmonary disease and asthma are often the cause of technical errors during inhalation. Patient education does not produce the expected results, as the underlying cause of reduced flow is high hyperinflation and weakening of the respiratory musculature. The use of technologically outdated inhalers is another significant cause of reduced therapy effectiveness. Patient education and even conversion to a different inhaler do not always increase the effectiveness of therapy. Respimat, a brand new delivery agent introduced in 2004, allows 39% to 67% of the nominal dose to be delivered to the airways, while the degree of pulmonary deposit is independent of inspiratory flow and pulmonary drug deposit does not decrease with increasing obstruction. Compared to powder inhalers, Respimat creates less resistance to airflow on inhalation. In addition, Respimat is an active device that requires no effort on the part of the patient to move the aerosol particles. These features make Respimat the new standard for inhalation therapy. This review aims to familiarise readers with the main features of the Respimat and the latest research findings

AlGaN/GaN HEMT TRAP CHARACTERISTIC FREQUENCY DEPENDENCE ON TEMPERATURE AND ITS IMPACT ON THE RF POWER AMPLIFIER LINEARIZABILITY

This paper presents a study of the linearizability of AlGaN/GaN HEMT based RF power amplifiers, RFPAs, and its relation with the active device trap activation energy. Based on the theory of thermally activated traps and on the experimental determination of the trap activation energy, we could show that despite different devices may exhibit traps with the same emission timeconstant at room temperature, their characteristic frequency may change significantly under nominal operation because of their temperature rise. And this was found to be key to explain the distinct linearizability performance of the tested devices because different stimulus dynamics excite the long-term memory effects imposed by traps with sensible different levels.

Study of an Integration Platform Based on an Adiabatic Active-Layer Waveguide Connection for InP Photonic Device Integration Mirroring That of Heterogeneous Integration on Silicon

In this work, a photonic device integration platform capable of integration of active-passive InP-based photonic devices without the use of material regrowth is introduced. The platform makes use of an adiabatic active-layer waveguide connection (ALWC) to move an optical beam between active and passive devices. The performance of this platform is analyzed using an example made up of four main sections: (1) a fiber coupling section for enabling vertical beam coupling from optical fiber into the photonic chip using a mode-matched surface grating with apodized duty cycles; (2) a transparent waveguide section for realizing passive photonic devices; (3) an adiabatic mode connection structure for moving the optical beam between passive and active device sections; and (4) an active device section for realizing active photonic devices. It is shown that the coupled surface grating, when added with a bottom gold reflector, can achieve a high chip-to-fiber coupling efficiency (CE) of 88.3% at 1550 nm. The adiabatic active-layer mode connection structure has an optical loss of lower than 1% (CE > 99%). The active device section can achieve an optical gain of 20 dB/mm with the use of only 3 quantum wells. The optimized structural parameters of the entire waveguide module are analyzed and discussed.