Steering the current flow in twisted bilayer graphene

A nanoelectronic device made of twisted bilayer graphene (TBLG) is proposed to steer the direction of the current flow. The ballistic electron current, injected at one edge of the bottom layer, can be guided predominantly to one of the lateral edges of the top layer. The current is steered to the opposite lateral edge, if either the twist angle is reversed or the electrons are injected in the valence band instead of the conduction band, making it possible to control the current flow by electric gates. When both graphene layers are aligned, the current passes straight through the system without changing its initial direction. The observed steering angle exceeds well the twist angle and emerges for a broad range of experimentally accessible parameters. It is explained by the twist angle and the trigonal shape of the energy bands beyond the van Hove singularity due to the Moiré interference pattern. As the shape of the energy bands depends on the valley degree of freedom, the steered current is valley polarized. Our findings show how to control and manipulate the current flow in TBLG. Technologically, they are of relevance for applications in twistronics and valleytronics.

Hyperbolic Plasmons Propagate through a Nodal Metal

Metals are canonical plasmonic media at infrared and optical wavelengths allowing one to guide and manipulate light at sub-diffractional length scales. A special form of optical waveguiding is offered by highly anisotropic crystals revealing different signs of the dielectric function along orthogonal directions. These latter types of media are classified as hyperbolic and many crystalline insulators, semiconductors and artificial metal-based metamaterials belong to that class. Layered anisotropic metals are also anticipated to support hyperbolic waveguiding. Yet this behavior remains elusive primarily because interband processes introduce extreme losses and arrest light propagation. Here, we report on the observation of propagating hyperbolic waves in a prototypical layered nodal-line semimetal ZrSiSe. The unique electronic structure with touching energy bands at nodal points/lines suppresses losses and enables a hyperbolic regime at the telecommunications frequencies. The observed waveguiding in metallic ZrSiSe is a product of polaritonic hybridization between near-infrared light and long-lived nodal-line plasmons. By mapping the energy-momentum dispersion of the nodal-line hyperbolic modes in ZrSiSe we inquired into the role of additional screening associated with the surface states.

A Unified View on Geometric Phases and Exceptional Points in Adiabatic Quantum Mechanics

We present a formal geometric framework for the study of adiabatic quantum mechanics for arbitrary finite-dimensional non-degenerate Hamiltonians. This framework generalizes earlier holonomy interpretations of the geometric phase to non-cyclic states appearing for non-Hermitian Hamiltonians. We start with an investigation of the space of non-degenerate operators on a finite-dimensional state space. We then show how the energy bands of a Hamiltonian family form a covering space. Likewise, we show that the eigenrays form a bundle, a generalization of a principal bundle, which admits a natural connection yielding the (generalized) geometric phase. This bundle provides in addition a natural generalization of the quantum geometric tensor and derived tensors, and we show how it can incorporate the non-geometric dynamical phase as well. We finish by demonstrating how the bundle can be recast as a principal bundle, so that both the geometric phases and the permutations of eigenstates can be expressed simultaneously by means of standard holonomy theory.

Modeling of the Point Defect Migration across the AlN/GaN Interfaces—Ab Initio Study

The formation and diffusion of point defects have a detrimental impact on the functionality of devices in which a high quality AlN/GaN heterointerface is required. The present paper demonstrated the heights of the migration energy barriers of native point defects throughout the AlN/GaN heterointerface, as well as the corresponding profiles of energy bands calculated by means of density functional theory. Both neutral and charged nitrogen, gallium, and aluminium vacancies were studied, as well as their complexes with a substitutional III-group element. Three diffusion mechanisms, that is, the vacancy mediated, direct interstitial, and indirect ones, in bulk AlN and GaN crystals, as well at the AlN/GaN heterointerface, were taken into account. We showed that metal vacancies migrated across the AlN/GaN interface, overcoming a lower potential barrier than that of the nitrogen vacancy. Additionally, we demonstrated the effect of the inversion of the electric field in the presence of charged point defects VGa3− and VAl3− at the AlN/GaN heterointerface, not reported so far. Our findings contributed to the issues of structure design, quality control, and improvement of the interfacial abruptness of the AlN/GaN heterostructures.

A Robust Estimation of Lorentz Invariance Violation and Intrinsic Spectral Lag of Short Gamma-Ray Bursts

Gamma-ray bursts (GRBs) have been identified as one of the most promising sources for Lorentz invariance violation (LIV) studies due to their cosmological distance and energetic emission in wide energy bands. However, the arrival-time difference of GRB photons among different energy bands is affected not only by the LIV effect but also by the poorly known intrinsic spectral lags. In previous studies, assumptions of spectral lag have to be made which could introduce systematic errors. In this paper, we used a sample of 46 short GRBs (SGRBs), whose intrinsic spectra lags are much smaller than long GRBs, to better constrain the LIV. The observed spectral lags are derived between two fixed energy bands in the source rest frame rather than the observer frame. Moreover, the lags are calculated with the novel Li–CCF method, which is more robust than traditional methods. Our results show that, if we consider LIV as a linear energy dependence of the photon propagation speed in the data fit, then we obtain a robust limit of E QG > 1015 GeV (95% CL). If we assume no LIV effect in the keV–MeV energy range, the goodness of data fit is equivalently as well as the case with LIV and we can constrain the common intrinsic spectral lags of SGRBs to be 1.4 ± 0.5 ms (1σ), which is the most accurate measurement thus far.

Nonequilibrium Band Occupation and Optical Response of Gold After Ultrafast XUV Excitation

Free electron lasers offer unique properties to study matter in states far from equilibrium as they combine short pulses with a large range of photon energies. In particular, the possibility to excite core states drives new relaxation pathways that, in turn, also change the properties of the optically and chemically active electrons. Here, we present a theoretical model for the dynamics of the nonequilibrium occupation of the different energy bands in solid gold driven by exciting deep core states. The resulting optical response is in excellent agreement with recent measurements and, combined with our model, provides a quantitative benchmark for the description of electron-phonon coupling in strongly driven gold. Focusing on sub-picosecond time scales, we find essential differences between the dynamics induced by XUV and visible light.

THE AMMONIA VAPORS INFLUENCE ON THE ELECTRICAL CHARACTERISTICS OF NANOSIZED TIN DIOXIDE FILMS OBTAINED USING A POLYMER

In the presented paper the effect of ammonia vapors on the electrical properties of nanosized tin dioxide films obtained using polymers was investigated to assess the possibility of their use as an ammonia sensor’s sensitive element at room temperature. Ammonia vapor leads to a decrease in the conductivity of the studied SnO2 films. This is due to the fact that the adsorbed ammonia molecules increase the height of the intergranular potential barriers, and the surface shut-off bend of the energy bands. The main role in this is played by the processes of physical adsorption of ammonia molecules. The sensitivity of the films to ammonia vapor is in the range of 0.35-0.63 and reaches a maximum at a voltage of 300 V. The processes of adsorption and desorption take place in two stages and are reversible, as evidenced by the calculated time constants of adsorption and desorption.

Linking topological features of the Hofstadter model to optical diffraction figures

In two, three and even four spatial dimensions, the transverse responses experienced by a charged particle on a lattice in a uniform magnetic field are fully controlled by topological invariants called Chern numbers, which characterize the energy bands of the underlying Hofstadter Hamiltonian. These remarkable features, solely arising from the magnetic translational symmetry, are captured by Diophantine equations which relate the fraction of occupied states, the magnetic flux and the Chern numbers of the system bands. Here we investigate the close analogy between the topological properties of Hofstadter Hamiltonians and the diffraction figures resulting from optical gratings. In particular, we show that there is a one-to-one relation between the above mentioned Diophantine equation and the Bragg condition determining the far-field positions of the optical diffraction peaks. As an interesting consequence of this mapping, we discuss how the robustness of diffraction figures to structural disorder in the grating is a direct analogy of the robustness of transverse conductance in the Quantum Hall effect.

Simulation study for GaN-based hybrid trench MOS barrier Schottky diode with an embedded p-type NiO termination: increased forward current density and enhanced breakdown voltage

In this work, a hybrid trench MOS barrier Schottky diode (TMBS) structure is proposed to improve both the forward current density and the breakdown voltage (BV) by using TCAD simulation tools. The hybrid structure means that the conventional TMBS rectifier is combined with a p-NiO/n-GaN diode. This can modulate the lateral energy bands by removing the conduction band barriers for electrons. Thus, the improved current spreading effect and the better conductivity modulation can be obtained, leading to the increased current density. Meanwhile, the embedded p-type NiO layer can also help to reduce the electric field at Schottky contact interface and the edge of anode contact/p-NiO layer interface. Thus, the breakdown voltage can be improved remarkably. Moreover, a detailed optimization strategy for the hybrid TMBS is also analyzed by varying the p-NiO layer thickness (TNiO) and the lengths of the anode electrode that is covered on the p-NiO layer (LA).