SOI Waveguide Bragg Grating Photonic Sensor for Human Body Temperature Measurement Based on Photonic Integrated Interrogator

A waveguide Bragg grating (WBG) provides a flexible way for measurement, and it could even be used to measure body temperature like e-skin. We designed and compared three structures of WBG with the grating period, etching depth, and duty cycle. The two-sided WBG was fabricated. An experimental platform based on photonic integrated interrogator was set up and the experiment on the two-sided WBG was performed. Results show that the two-sided WBG can be used to measure temperature changes over the range of 35–42 °C, with a temperature measurement error of 0.1 °C. This approach has the potential to facilitate application of such a silicon-on-insulator (SOI) WBG photonic sensor to wearable technology and realize the measurement of human temperature.

The Method of Low-Temperature ICP Etching of InP/InGaAsP Heterostructures in Cl2-Based Plasma for Integrated Optics Applications

Chlorine processes are widely used for the formation of waveguide structures in InP-based optoelectronics. Traditionally, ICP etching of InP in a Cl2-based plasma requires substrate temperatures in the range of 150–200 °C. This condition is mandatory, since during the etching process low-volatility InClx components are formed and at insufficient temperatures are deposited onto substrate, leading to the formation of defects and further impossibility of the formation of waveguide structures. The need to preheat the substrate limits the application of chlorine processes. This paper presents a method of ICP etching an InP/InGaAsP heterostructure in a Cl2/Ar/N2 gas mixture. A feature of the developed method is the cyclic etching of the heterostructure without preliminary heating. The etching process starts at room temperature. In the optimal etching mode, the angle of inclination of the sidewalls of the waveguides reached 88.8° at an etching depth of more than 4.5 μm. At the same time, the surface roughness did not exceed 30 nm. The selectivity of the etching process with respect to the SiNx mask was equal to 9. Using the developed etching method, test integrated waveguide elements were fabricated. The fabricated active integrated waveguide (p-InP epitaxial layers were not removed) with a width of 2 μm demonstrated an optical loss around 11 ± 1.5 dB/cm at 1550 nm. The insertion loss of the developed Y- and MMI-splitters did not exceed 0.8 dB.

Optimization of deep silicon etching process for microstructures fabrication

The paper presents the study of cyclic process of deep anisotropic silicon etching, called Oxi-Etch, in which the steps of etching and oxidation alternate, allowing deep etching of silicon with an anisotropic profile. This process forms typical for cyclic etching process sidewall profile called scalloping. Opportunities for modification and optimization of the process for specific application were investigated. The effects of optimization of the bias voltage and the duration of the etching step on the parameters of the resulting structures, such as the etching depth, wall roughness, and the accuracy of transferring the lithographic size, are considered. Balance between etch rate and scalloping was established.

Characterization of focusing grating couplers for telecom wavelengths in the first and second diffraction order

In this work we studied how focusing grating couplers, developed for telecommunication C-band wavelength range, can be applied in the near infrared range. In the paper we presented prospects of usage of both first and second diffraction maxima of theoretically computed diffraction grating couplers for photonic aims. The dependence of the central wavelength of the grating on the etching depth of the photonic layer, on the period and filling factor of the grating was studied. We have compared our experimental results with numerical study, performed using finite elements method of solving differential equations. The work is important for different photonic applications and introduces new prospects in application of the already fabricated devices, developed for telecommunication wavelengths.

Study on the Absorption Characteristics and Laser Damage Properties of Fused Silica Optics under Flexible Polishing and Shallow DCE Process

The enhancement of laser damage resistance of fused silica optics was a hotspot in scientific research. At present, a variety of modern processes have been produced to improve the laser induced damage threshold (LIDT) of fused silica optics. They included pre-treatment processes represented by flexible computer controlled optical surfacing (CCOS), magnetorheological finishing (MRF), ion beam finishing (IBF), and post-treatment processes represented by dynamic chemical etching (DCE). These have achieved remarkable results. However, there are still some problems that need to be solved urgently, such as excessive material removal, surface accuracy fluctuation in the DCE process, and the pollution in MRF process, etc. In view of above problems, an MRF, CCOS, IBF and shallow DCE combined technique was used to process fused silica optics. The surface morphology could be greatly controlled and chemical etching depth was reduced, while the LIDT increased steadily. After processing by this combined technique, the LIDT increased to 12.1 J/cm2 and the laser damage resistance properties of fused silica were significantly enhanced. In general, the MRF, IBF, CCOS and shallow DCE combined technique brought much help to the enhancement of laser damage resistance of fused silica, and could be used as a process route in the manufacturing process of fused silica.

Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO2 Nanosphere Mask Lithography with the Dip-Coating Method

In this paper, the conditions of the dip-coating method of SiO2 nanospheres are optimized, and a neatly arranged single-layer SiO2 array is obtained. On this basis, a “top-down” inductively coupled plasma (ICP) technique is used to etch the p-GaN layer to prepare a periodic triangular nanopore array. After the etching is completed, the compressive stress in the epitaxial wafer sample is released to a certain extent. Then, die processing is performed on the etched LED epitaxial wafer samples. The LED chip with an etching depth of 150 nm has the highest overall luminous efficiency. Under a 100 mA injection current, the light output power (LOP) of the etched 150 nm sample is 23.61% higher than that of the original unetched sample.

Imperfections of Scalar Approximation in Calibration of Computer-Generated Holograms for Optical Surface Measurements

Computer-generated hologram (CGH) null correctors are used as accuracy standards for interferometric measurements of optical surfaces and optical systems. Diffractive optics calibrators (DOCs) have been developed to evaluate the phase tolerance of CGHs based on scalar approximation by measuring variations in duty cycle and etching depth. However, if the grating period of a CGH < 5 λ, the scalar approximation is not accurate for phase analysis and reconstruction. In this study, the measurement errors of DOCs with small-period CGHs were investigated and experimentally verified. Results show that the imperfections of scalar approximation in CGHs cannot be ignored and the development of rigorous evaluation methods to improve the measurement accuracy of CGHs is of great practical significance.

METHOD FOR PASSENGER RESERVED SEAT CAR LIFE INCREASE

In the paper there is considered a car basic bearing element – center sill which because of long operation is subjected to corrosion destruction (on surface and in depth). The elimination of such corrosion spots mechanically is not effective and results in local decrease of a unit thickness and also in some cases in through corrosion. The authors of the paper have carried out investigations in places where intensive corrosion took place. For this there were cut out four fragments of the center sill and carried out etching-out and measuring residual stresses and a deformation value from etching depth of each fragment through Davidenkov’s method and CNIITMach’s procedure. As a result of the investigation carried out there is offered a fulfillment of center sill strengthening in the area of intermediate and end girder welding by means of shot cleaning in these areas, and also by additional corrosion resistant coating application on these surfaces. The investigations are carried out through Davidenkov’s method and on the basis of CNIITMach’s procedure. The work novelty: there are defined conditions for corrosion spot formation and technology is developed to ensure units life increase. According to the results of the investigations carried out there is made a conclusion: for the purpose of decrease and exclusion of corrosion processes and service life increase of both the center sill and a car in the whole it is necessary to carry out strengthening center sill elements in the areas of intermediate and end girders welding by means of the shot cleaning fulfillment in these places, and also an additional corrosion resistant coating application on these areas.