elemental tellurium
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2021 ◽  
pp. 2105426
Author(s):  
Ze Chen ◽  
Chuan Li ◽  
Qi Yang ◽  
Donghong Wang ◽  
Xinliang Li ◽  
...  

2021 ◽  
pp. 105702
Author(s):  
A.A. González-Ibarra ◽  
F. Nava-Alonso ◽  
G.I. Dávila-Pulido ◽  
F.R. Carrillo-Pedroza ◽  
A.M. Rodríguez-Flores

2021 ◽  
Vol 3 (2) ◽  
Author(s):  
Tetsuya Furukawa ◽  
Yuta Watanabe ◽  
Naoki Ogasawara ◽  
Kaya Kobayashi ◽  
Tetsuaki Itou
Keyword(s):  

2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Jaime F. Oliveira ◽  
Magda B. Fontes ◽  
Marcus Moutinho ◽  
Stephen E. Rowley ◽  
Elisa Baggio-Saitovitch ◽  
...  

AbstractElemental tellurium is a small band-gap semiconductor, which is always p-doped due to the natural occurrence of vacancies. Its chiral non-centrosymmetric structure, characterized by helical chains arranged in a triangular lattice, and the presence of a spin-polarized Fermi surface, render tellurium a promising candidate for future applications. Here, we use a theoretical framework, appropriate for describing the corrections to conductivity from quantum interference effects, to show that a high-quality tellurium single crystal undergoes a quantum phase transition at low temperatures from an Anderson insulator to a correlated disordered metal at around 17 kbar. Such insulator-to-metal transition manifests itself in all measured physical quantities and their critical exponents are consistent with a scenario in which a pressure-induced Lifshitz transition shifts the Fermi level below the mobility edge, paving the way for a genuine Anderson-Mott transition. We conclude that previously puzzling quantum oscillation and transport measurements might be explained by a possible Anderson-Mott ground state and the observed phase transition.


Author(s):  
А.С. Тарасов ◽  
Н.Н. Михайлов ◽  
С.А. Дворецкий ◽  
Р.В. Менщиков ◽  
И.Н. Ужаков ◽  
...  

In this work, atomically clean and structurally ordered surface of CdTe epitaxial layer after storage in air by treatment in isopropyl alcohol saturated with vapors of hydrochloric acid, and further temperature heating in an ultrahigh vacuum, was obtained. CdTe surface chemical treatment results in the removal of native oxides and surface enrichment with elemental tellurium. Heating in vacuum leads to the tellurium desorption and the appearance of a Te-stabilized CdTe surface. During heating in vacuum, two stages of surface state change are observed (~125°С and ≤250°С). At Т>250°С, elemental tellurium is desorbed and a Te-stabilized structure (1x1) CdTe(013) is formed.


Chemistry ◽  
2020 ◽  
Vol 2 (3) ◽  
pp. 652-661
Author(s):  
Damiano Tanini ◽  
Antonella Capperucci

The one-pot multistep ethyltellurenylation reaction of epoxides with elemental tellurium and lithium triethylborohydride is described. The reaction mechanism was experimentally investigated. Dilithium ditelluride and triethyl borane, formed from elemental tellurium and lithium triethylborohydride, were shown to be the key species involved in the reaction mechanism. Epoxides undergo ring-opening reaction with dilithium ditelluride to afford β-hydroxy ditellurides, which are sequentially converted into the corresponding β-hydroxy-alkyl ethyl tellurides by transmetalation with triethyl borane, reasonably proceeding through the SH2 mechanism.


2020 ◽  
Vol 101 (17) ◽  
Author(s):  
Diego Rodriguez ◽  
Alexander A. Tsirlin ◽  
Tobias Biesner ◽  
Teppei Ueno ◽  
Takeshi Takahashi ◽  
...  

2020 ◽  
Vol 124 (13) ◽  
Author(s):  
M. Sakano ◽  
M. Hirayama ◽  
T. Takahashi ◽  
S. Akebi ◽  
M. Nakayama ◽  
...  

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