Organic monolayers modified by vacuum ultraviolet irradiation for solution-processed organic thin-film transistors

A trimethylsilyl-monolayer modified by vacuum ultraviolet (VUV) light has been investigated for use in solution-processed organic thin-film transistors (OTFTs). The VUV irradiation changed a hydrophobic trimethylsilyl-monolayer formed from hexamethyldisilazane vapor into a hydrophilic surface suitable for solution processing. The treated surface was examined via water contact angle measurement and X-ray photoelectron spectroscopy. An appropriate irradiation of VUV light enabled the formation of a dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) film on a modified monolayer by spin-coating. Consequently, the C8-BTBT-based OTFT with a monolayer modified for an optimal VUV irradiation time exhibited a field-effect mobility up to 4.76 cm2 V−1 s−1. The partial monolayer modification with VUV can be adapted to a variety of solution-processes and organic semiconductors for prospective printed electronics.

Fully solution-processed InSnO/HfGdOx thin-film transistor for light-stimulated artificial synapse

In recent years, the research interest in brain-inspired light-stimulated artificial synaptic electronic devices has greatly increased, due to their great potential in constructing low-power, high-efficiency, and high-speed neuromorphic computing systems. However, in the field of electronic synaptic device simulation, the development of three-terminal synaptic transistors with low manufacturing cost and excellent memory function still faces huge challenges. Here, a fully solution-processed InSnO/HfGdOx thin film transistor (TFT) is fabricated by a simple and convenient solution process to verify the feasibility of light-stimulated artificial synapses. This experiment investigated the electrical and synaptic properties of the device under light stimulation conditions. The device successfully achieved some important synaptic properties, such as paired-pulse facilitation (PPF), excitatory postsynaptic current (EPSC) and the transition from short-term memory (STM) to long-term memory (LTM). In addition, the device also exhibits brain-like memory and learning behaviors under different colors of light stimulation. This work provides an important strategy for the realization of light-stimulated artificial synapses and may have good applications in the field of artificial neuromorphic computing by light signals in the future.

Engineering Bilayer AlOx /YAlOx Dielectric Stacks for Hysteresis-Free Switching in Solution-Processed Metal-Oxide Thin-Film Transistors

Solution processing and low-temperature annealing (T < 300°C) of the precursor compounds promise low-cost manufacturing for future applications of flexible oxide electronics. However, thermal budget reduction comes at the expense of increased charge trapping residuals in the dielectric layers, which result in hysteretic switching of transistors. This work reports on a novel bilayer dielectric scheme combining aluminum oxide (AlOx) as a positive charge trapping insulator and yttrium aluminum oxide (YAlOx) as a negative charge trapping dielectric to obtain hysteresis free switching in the solution-processed metal-oxide thin-film transistors. Devices were processed at a thermal budget of 250°C, without an encapsulation layer. The presence of H+ and OH− in the AlOx were found responsible for the hysteresis in the switching, which was suppressed successfully with the thickness optimization of the YAlOx in the dielectric stack. Fabricated devices yield ON/OFF ratios of 106, sub-pA level gate leakage currents, a subthreshold swing of 150 mV/decade, and field-effect mobility of 1.5 cm2/V-sec.