hall measurements
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2021 ◽  
Vol 103 (21) ◽  
Author(s):  
Xu Zhang ◽  
Zhongpei Feng ◽  
Xinjian Wei ◽  
Zefeng Lin ◽  
Xingyu Jiang ◽  
...  

Author(s):  
Takumi Kimura ◽  
Kouhei Matsumori ◽  
Kenichi Oto ◽  
Yoshihiko Kanemitsu ◽  
Yasuhiro Yamada

2021 ◽  
Author(s):  
Sevda Sarıtaş ◽  
Tuba Çakıcı ◽  
Günay Merhan Muğlu ◽  
Muhammet Yıldırım

Abstract In this study, we, firstly, fabricated Fe 2 O 3 thin film recently promising to be used in spintronic technology by magnetron sputtering technique on ZnO thin film prepared by spray pyrolysis at 450 o C. The crystal structure, surface morphology and structure, chemical composition, optical and electronic properties, and electric properties of the Fe 2 O 3 /ZnO sample were performed by X-ray diffraction (XRD), scanning electron microscope (SEM) and atomic force microscope (AFM), energy-dispersive X-ray (EDX), ultraviolet-visible (UV-VIS) and Raman spectrometer, and Hall measurements, respectively. XRD measurements showed that Fe 2 O 3 and ZnO thin films have monoclinic and hexagonal crystal structures, respectively, and also both of them are polycrystalline. SEM images proved that there is a very good with the stoichiometric formation of ZnO nanocrystals of spherical shape and demonstrate aggregation of the particles and AFM images displays the distribution of flake-like of Fe 2 O 3 structure over the surface of ZnO. UV-VIS and Raman measurements revealed that the ZnO and Fe 2 O 3 /ZnO heterostructure band's band gap energy are 3.277 and 3.24 eV, respectively. Finally, the calculated values of electric conductivity, σ, electron density, n, and mobility of the electron, μ, using the data obtained from Hall measurements are 4.39x10 2 Ω -1 .m -1 , 6.88x10 21 m -3 and 3.99x10 -1 V -1 .m 2 . s, respectively.


AIP Advances ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 025033
Author(s):  
Ye Du ◽  
Ryan Thompson ◽  
Makoto Kohda ◽  
Junsaku Nitta

Molecules ◽  
2020 ◽  
Vol 25 (24) ◽  
pp. 5919
Author(s):  
Felix Rosenburg ◽  
Benjamin Balke ◽  
Norbert Nicoloso ◽  
Ralf Riedel ◽  
Emanuel Ionescu

The present work elaborates on the correlation between the amount and ordering of the free carbon phase in silicon oxycarbides and their charge carrier transport behavior. Thus, silicon oxycarbides possessing free carbon contents from 0 to ca. 58 vol.% (SiOC/C) were synthesized and exposed to temperatures from 1100 to 1800 °C. The prepared samples were extensively analyzed concerning the thermal evolution of the sp2 carbon phase by means of Raman spectroscopy. Additionally, electrical conductivity and Hall measurements were performed and correlated with the structural information obtained from the Raman spectroscopic investigation. It is shown that the percolation threshold in SiOC/C samples depends on the temperature of their thermal treatment, varying from ca. 20 vol.% in the samples prepared at 1100 °C to ca. 6 vol.% for the samples annealed at 1600 °C. Moreover, three different conduction regimes are identified in SiOC/C, depending on its sp2 carbon content: (i) at low carbon contents (i.e., <1 vol.%), the silicon oxycarbide glassy matrix dominates the charge carrier transport, which exhibits an activation energy of ca. 1 eV and occurs within localized states, presumably dangling bonds; (ii) near the percolation threshold, tunneling or hopping of charge carriers between spatially separated sp2 carbon precipitates appear to be responsible for the electrical conductivity; (iii) whereas above the percolation threshold, the charge carrier transport is only weakly activated (Ea = 0.03 eV) and is realized through the (continuous) carbon phase. Hall measurements on SiOC/C samples above the percolation threshold indicate p-type carriers mainly contributing to conduction. Their density is shown to vary with the sp2 carbon content in the range from 1014 to 1019 cm−3; whereas their mobility (ca. 3 cm2/V) seems to not depend on the sp2 carbon content.


2020 ◽  
Vol 128 (7) ◽  
pp. 075703
Author(s):  
Maicol A. Ochoa ◽  
James E. Maslar ◽  
Herbert S. Bennett

2020 ◽  
Vol 113 ◽  
pp. 105052
Author(s):  
Daichi Namiuchi ◽  
Atsushi Onogawa ◽  
Taisuke Fujisawa ◽  
Yuichi Sano ◽  
Daisuke Izumi ◽  
...  

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