critical step
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Author(s):  
Robert Darkins ◽  
Ian J. McPherson ◽  
Ian J. Ford ◽  
Dorothy M. Duffy ◽  
Patrick R. Unwin

2022 ◽  
pp. 1-8
Author(s):  
Ganna Khrystova ◽  
Olena Uvarova

Human rights due diligence (HRDD) has become the buzzword of much of the advocacy and work today around business and human rights.1 It is almost commonplace that companies have the responsibility to identify, prevent, mitigate and account for how they address these adverse human rights impacts as part of their ongoing HRDD processes, in line with the UNGPs.2 The assessment of human rights impacts (HRIA) is a critical step in this process.3


2022 ◽  
Vol 355 ◽  
pp. 02015
Author(s):  
Xiao Li ◽  
Desheng Liu

Today, modern warfare has shifted from weapon-centric operations to network-centric system operations, which has led to a linear increase in the complexity of combat missions. When a commander faces a high-level mission, how to model the entire combat mission is a critical step, and it is also the basis for the generation of subsequent combat plans and combat command and control. Aiming at this problem, this paper proposes a task modeling method based on the OODA loop. This method first decomposes the mission task, and defines four meta tasks based on the OODA loop theory, and finally analyzes the meta tasks from the perspective of time and information. The mission relationship is defined, which can realize the modeling and formal description of the entire combat mission process, and provide support for the follow-up combat links.


Author(s):  
Xia Jiang ◽  
Feng Long ◽  
Jiaping Zhao ◽  
Peng Liu ◽  
Jianchun Jiang ◽  
...  

Abstract: Molecular structural modification was a critical step for the production of high-quality biofuel. In this study, it was found that catalytic cracking followed by products isomerization is an effective...


mSphere ◽  
2021 ◽  
Author(s):  
Adrianne N. Edwards ◽  
Caitlin L. Willams ◽  
Nivedita Pareek ◽  
Shonna M. McBride ◽  
Rita Tamayo

Many bacterial organisms utilize the small signaling molecule cyclic diguanylate (c-di-GMP) to regulate important physiological processes, including motility, toxin production, biofilm formation, and colonization. c-di-GMP inhibits motility and toxin production and promotes biofilm formation and colonization in the anaerobic, gastrointestinal pathogen Clostridioides difficile . However, the impact of c-di-GMP on C. difficile spore formation, a critical step in this pathogen’s life cycle, is unknown.


Cancers ◽  
2021 ◽  
Vol 13 (23) ◽  
pp. 6061
Author(s):  
Lindy Davis ◽  
Ashley Tarduno ◽  
Yong-Chen Lu

Patients with metastatic cutaneous melanoma have experienced significant clinical responses after checkpoint blockade immunotherapy or adoptive cell therapy. Neoantigens are mutated proteins that arise from tumor-specific mutations. It is hypothesized that the neoantigen recognition by T cells is the critical step for T-cell-mediated anti-tumor responses and subsequent tumor regressions. In addition to describing neoantigens, we review the sentinel and ongoing clinical trials that are helping to shape the current treatments for patients with cutaneous melanoma. We also present the existing evidence that establishes the correlations between neoantigen-reactive T cells and clinical responses in melanoma immunotherapy.


2021 ◽  
pp. 49-54
Author(s):  
Guillaume Fleury ◽  
Monica J. Mendoza-Castro ◽  
Noemi Linares ◽  
Maarten B. J. Roeffaers ◽  
Javier García-Martínez

Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1441
Author(s):  
Min Jae Yeom ◽  
Jeong Yong Yang ◽  
Chan Ho Lee ◽  
Junseok Heo ◽  
Roy Byung Kyu Chung ◽  
...  

AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (MOS-HEMTs) with undoped ferroelectric HfO2 have been investigated. Annealing is often a critical step for improving the quality of as-deposited amorphous gate oxides. Thermal treatment of HfO2 gate dielectric, however, is known to degrade the oxide/nitride interface due to the formation of Ga-containing oxide. In this work, the undoped HfO2 gate dielectric was spike-annealed at 600 °C after the film was deposited by atomic layer deposition to improve the ferroelectricity without degrading the interface. As a result, the subthreshold slope of AlGaN/GaN MOS-HEMTs close to 60 mV/dec and on/off ratio>109 were achieved. These results suggest optimizing the HfO2/nitride interface can be a critical step towards a low-loss high-power switching device.


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