cascade emission
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2021 ◽  
Vol 140 (9) ◽  
Author(s):  
Cameron J. Mackie ◽  
Alessandra Candian ◽  
Timothy J. Lee ◽  
Alexander G. G. M. Tielens

AbstractThe profile of the 11.2 μm feature of the infrared (IR) cascade emission spectra of polycyclic aromatic hydrocarbon (PAH) molecules is investigated using a vibrational anharmonic method. Several factors are found to affect the profile including: the energy of the initially absorbed ultraviolet (UV) photon, the density of vibrational states, the anharmonic nature of the vibrational modes, the relative intensities of the vibrational modes, the rotational temperature of the molecule, and blending with nearby features. Each of these factors is explored independently and influence either the red or blue wing of the 11.2 μm feature. The majority impact solely the red wing, with the only factor altering the blue wing being the rotational temperature.


Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1481
Author(s):  
Marcin Siekacz ◽  
Grzegorz Muziol ◽  
Henryk Turski ◽  
Mateusz Hajdel ◽  
Mikolaj Żak ◽  
...  

We demonstrate the applications of tunnel junctions (TJs) for new concepts of monolithic nitride-based multicolor light emitting diode (LED) and laser diode (LD) stacks. The presented structures were grown by plasma-assisted molecular beam epitaxy (PAMBE) on GaN bulk crystals. We demonstrate a stack of four LDs operated at pulse mode with emission wavelength of 453 nm. The output power of 1.1 W and high slope efficiency of 2.3 W/A is achieved for devices without dielectric mirrors. Atomically flat surface after the epitaxy of four LD stack and low dislocation density is measured as a result of proper TJ design with optimized doping level. The strain compensation design with InGaN waveguides and AlGaN claddings is shown to be crucial to avoid cracking and lattice relaxation of the 5 µm thick structure. Vertical connection of n-LDs allows for cascade emission of photons and increases the quantum efficiency n-times. The two-color (blue and green) LEDs are demonstrated. Application of TJs simplifies device processing, reducing the need for applications of p-type contact. The key factor enabling demonstration of such devices is hydrogen-free PAMBE technology, in which activation of buried p-type layers is not necessary.


2018 ◽  
Vol 112 (14) ◽  
pp. 143301 ◽  
Author(s):  
Leonardo Evaristo de Sousa ◽  
Wiliam Ferreira da Cunha ◽  
Demétrio Antônio da Silva Filho ◽  
Pedro Henrique de Oliveira Neto
Keyword(s):  

2017 ◽  
Vol 835 (2) ◽  
pp. 288 ◽  
Author(s):  
S. Archambault ◽  
A. Archer ◽  
W. Benbow ◽  
M. Buchovecky ◽  
V. Bugaev ◽  
...  
Keyword(s):  

2017 ◽  
Vol 19 (23) ◽  
pp. 15503-15511 ◽  
Author(s):  
Amador García-Fuente ◽  
Andrés Vega

We present a theoretical approach that allows for the determination of the complete electronic 4fnand 4fn−15d valence manifolds of a lanthanide ion impurity in different host lattices in an easy, fast and reliable way.


2017 ◽  
Vol 07 (03) ◽  
Author(s):  
Saoussen Hammami ◽  
Sihem Sebai ◽  
David Jegouso ◽  
Valerie Reita ◽  
Nassira Chniba Boudjada ◽  
...  

JETP Letters ◽  
2016 ◽  
Vol 104 (2) ◽  
pp. 135-139 ◽  
Author(s):  
S. A. Rozhkov ◽  
V. V. Bakin ◽  
D. V. Gorshkov ◽  
S. N. Kosolobov ◽  
H. E. Scheibler ◽  
...  

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