Observation of ballistic upstream modes at fractional quantum Hall edges of graphene

The presence of “upstream” modes, moving against the direction of charge current flow in the fractional quantum Hall (FQH) phases, is critical for the emergence of renormalized modes with exotic quantum statistics. Detection of excess noise at the edge is a smoking gun for the presence of upstream modes. Here, we report noise measurements at the edges of FQH states realized in dual graphite-gated bilayer graphene devices. A noiseless dc current is injected at one of the edge contacts, and the noise generated at contacts at length, L = 4 μm and 10 μm away along the upstream direction is studied. For integer and particle-like FQH states, no detectable noise is measured. By contrast, for “hole-conjugate” FQH states, we detect a strong noise proportional to the injected current, unambiguously proving the existence of upstream modes. The noise magnitude remains independent of length, which matches our theoretical analysis demonstrating the ballistic nature of upstream energy transport, quite distinct from the diffusive propagation reported earlier in GaAs-based systems.

Investigation of the stability of graphene devices for quantum resistance metrology at direct and alternating current

Interlaboratory comparisons of the quantized Hall resistance are essential to verify the international coherence of primary impedance standards. Here we report on the investigation of the stability of p-doped graphene-based quantized Hall resistance devices at direct and alternating currents at CMI, KRISS, and PTB. To improve the stability of the electronic transport properties of the polymer encapsulated device, it was shipped in an over-pressurized transport chamber. The agreement of the quantized resistance with RK/2 at direct current was on the order of 1 nΩ/Ω between 3.5 T and 7.5 T at a temperature of 4.2 K despite changes in the carrier density during the shipping of the devices. At alternating current, the quantized resistance was realized in a double-shielded graphene Hall device. Preliminary measurements with digital impedance bridges demonstrate the good reproducibility of the quantized resistance near the frequency of 1 kHz within 0.1 μΩ/Ω throughout the international delivery.

Simultaneous Extraction of the Grain Size, Single-Crystalline Grain Sheet Resistance, and Grain Boundary Resistivity of Polycrystalline Monolayer Graphene

The electrical properties of polycrystalline graphene grown by chemical vapor deposition (CVD) are determined by grain-related parameters—average grain size, single-crystalline grain sheet resistance, and grain boundary (GB) resistivity. However, extracting these parameters still remains challenging because of the difficulty in observing graphene GBs and decoupling the grain sheet resistance and GB resistivity. In this work, we developed an electrical characterization method that can extract the average grain size, single-crystalline grain sheet resistance, and GB resistivity simultaneously. We observed that the material property, graphene sheet resistance, could depend on the device dimension and developed an analytical resistance model based on the cumulative distribution function of the gamma distribution, explaining the effect of the GB density and distribution in the graphene channel. We applied this model to CVD-grown monolayer graphene by characterizing transmission-line model patterns and simultaneously extracted the average grain size (~5.95 μm), single-crystalline grain sheet resistance (~321 Ω/sq), and GB resistivity (~18.16 kΩ-μm) of the CVD-graphene layer. The extracted values agreed well with those obtained from scanning electron microscopy images of ultraviolet/ozone-treated GBs and the electrical characterization of graphene devices with sub-micrometer channel lengths.

Towards Repeatable, Scalable Graphene Integrated Micro-Nano Electromechanical Systems (MEMS/NEMS)

The demand for graphene-based devices is rapidly growing but there are significant challenges for developing scalable and repeatable processes for the manufacturing of graphene devices. Basic research on understanding and controlling growth mechanisms have recently enabled various mass production approaches over the past decade. However, the integration of graphene with Micro-Nano Electromechanical Systems (MEMS/NEMS) has been especially challenging due to performance sensitivities of these systems to the production process. Therefore, ability to produce graphene-based devices on a large scale with high repeatability is still a major barrier to the commercialization of graphene. In this review article, we discuss the merits of integrating graphene into Micro-Nano Electromechanical Systems, current approaches for the mass production of graphene integrated devices, and propose solutions to overcome current manufacturing limits for the scalable and repeatable production of integrated graphene-based devices.

Optimum design for the ballistic diode based on graphene field-effect transistors

We investigate the transport behavior of two-terminal graphene ballistic devices with bias voltages up to a few volts suitable for electronics applications. Four graphene devices based ballistic designs, specially fabricated from mechanically exfoliated graphene encapsulated by hexagonal boron nitride, exhibit strong nonlinear I-V characteristic curves at room temperature. A maximum asymmetry ratio of 1.58 is achieved at a current of 60 µA at room temperature through the ballistic behavior is limited by the thermal effect at higher bias. An analytical model using a specular reflection mechanism of particles is demonstrated to simulate the specular reflection of carriers from graphene edges in the ballistic regime. The overall trend of the asymmetry ratio depending on the geometry fits reasonably with the analytical model.

Probing nanomotion of single bacteria with graphene drums

Motion is a key characteristic of every form of life1. Even at the microscale, it has been reported that colonies of bacteria can generate nanomotion on mechanical cantilevers2, but the origin of these nanoscale vibrations has remained unresolved3,4. Here, we present a novel technique using drums made of ultrathin bilayer graphene, where the nanomotion of single bacteria can be measured in its aqueous growth environment. A single E. coli cell is found to generate random oscillations with amplitudes of up to 60 nm, exerting forces of up to 6 nN to its environment. Using mutant strains, we are able to pinpoint the bacterial flagella as the main source of nanomotion. By real-time tracing of changes in nanomotion upon administering antibiotics, we demonstrate that graphene drums can perform antibiotic susceptibility testing with single-cell sensitivity. These findings deepen our understanding of processes underlying cellular dynamics, and pave the way towards high throughput and parallelized rapid screening of the effectiveness of antibiotics in bacterial infections with graphene devices.