Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing

We report on impurity diffusion in ion implanted AlN layers after thermal annealing. Silicon, tin, germanium, and magnesium ions were implanted into single-crystal AlN layers grown on sapphire substrates. By annealing at 1600oC, silicon and magnesium atoms were diffused in the AlN layer, while less change was observed in the distribution of germanium atoms. Silicon implantation introduced vacancy-related defects. By annealing at temperatures over 1300oC, the vacancy-related defects were reduced, while oxygen atoms were diffused from the substrate due to sapphire decomposition. We reproducibly achieved silicon-implanted AlN layers with electrical conductance by controlling the annealing temperature and distribution of silicon and oxygen concentrations.

Wear Behaviour of N Ion Implanted Ti-6Al-4V Alloy Processed by Selective Laser Melting

Selective laser melting (SLM) is a laser-based powder bed fusion additive manufacturing technique extensively used in industry. One of the most commonly used alloys in SLM process is Ti-6Al-4V. However, its tribological properties when coated with N ion implantation is not well understood. In the ion implantation process used in this study, N2+ and N+ are accelerated to the energy of 60 keV and implanted to a fluence of 6 × 1017 at.cm−2. The effect of N ion implanted layer in terms of hardness values and how this implanted layer may affect wear process and wear rate is investigated in this paper. Sliding wear tests were conducted on SLM and conventionally processed samples implanted with N ions, followed by examining the wear tracks and coefficient of friction in order to explain the wear rate data obtained. The results showed that N+ implantation increased hardness within the depth of ~200 nm and reduced wear rate in SLM samples, while N2+ was not beneficial.