Indirect stress and air-cavity displacement measurement of MEMS tunable VCSELs via micro-Raman and micro-photoluminescence spectroscopy

We employ micro-Raman spectroscopy to optically infer the stress experienced by the legs of a bridge-type microelectromechanical systems (MEMS) used in high contrast gratings tunable vertical cavity surface emitting lasers (VCSELs). We then employ micro-photoluminescence (PL) spectroscopy to indirectly measure the air cavity displacement of the same MEMS structure. Results from micro-Raman show that electrostatically actuating the MEMS with a DC bias configuration yields increasing residual stress on the endpoints of the MEMS with values reaching up to 0.8 GPa. We simulated a finite element model via Comsol Multiphysics which agrees with the trend we observe based on our micro-Raman data. Our micro-photoluminescence (PL) spectroscopy showed that change in the air cavity of the VCSEL structure results in a change in the full width of the PL peak emitted by the layer consisting of 4 pairs of Distributed Bragg Reflectors (DBRs). The change in the full width of the PL peak was due to the change in the optical cavity induced by displacing the MEMS via externally applied bias and agrees with our transfer matrix convolution simulation. These optical characterization tools can be used for failure analysis, MEMS design improvements, and monitoring of MEMS tunable VCSEL devices for mass production and manufacturing.

Top-emitting 940-nm thin-film VCSELs transferred onto aluminum heatsinks

Thin-film vertical cavity surface emitting lasers (VCSELs) mounted onto heatsinks open up the way toward low-power consumption and high-power operation, enabling them to be widely used for energy saving high-speed optical data communication and three-dimensional sensor applications. There are two conventional VCSEL polarity structures: p-on-n and n-on-p polarity. The former is more preferably used owing to the reduced series resistance of n-type bottom distributed Bragg reflection (DBR) as well as the lower defect densities of n-type GaAs substrates. In this study, the p-on-n structures of thin-film VCSELs, including an etch stop layer and a highly n-doped GaAs ohmic layer, were epitaxially grown in upright order by using low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The p-on-n structures of thin-film VCSELs were transferred onto an aluminum heatsink via a double-transfer technique, allowing the top-emitting thin-film VCSELs to keep the p-on-n polarity with the removal of the GaAs substrate. The threshold current (Ith) and voltage (Vth) of the fabricated top-emitting thin-film VCSELs were 1 mA and 2.8 V, respectively. The optical power was 7.7 mW at a rollover point of 16.1 mA.

A two-way 224-Gbit/s PAM4-based fibre-FSO converged system

A two-way 224-Gbit/s four-level pulse amplitude modulation (PAM4)-based fibre-free-space optical (FSO) converged system through a 25-km single-mode fibre (SMF) transport with 500-m free-space transmission is successfully constructed, which adopts injection-locked vertical-cavity surface-emitting lasers with polarisation-multiplexing mechanism for a demonstration. Compared with one-way transmission, two-way transmission is an attractive architecture for fibre-FSO converged system. Two-way transmission over SMF transport with free-space transmission not only reduces the required number of fibres and the setups of free-space transmission, but also provides the advantage of capacity doubling. Incorporating dual-wavelength four-level pulse amplitude modulation (PAM4) modulation with polarisation-multiplexing mechanism, the transmission capacity of fibre-FSO converged system is significantly enhanced to 224 Gbit/s (56 Gbit/s PAM4/wavelength × 2-wavelength × 2-polarisation) for downlink/uplink transmission. Bit error rate and PAM4 eye diagrams (downstream/upstream) perform well over 25-km SMF transport with 500-m free-space transmission. This proposed two-way fibre-FSO converged system is a prominent one not only because of its development in the integration of fibre backbone with optical wireless extension, but also because of its advantage in two-way transmission for affording high downlink/uplink data rate with good transmission performance.

Dynamic characteristics and noise modelling of directly modulated quantum well-dots microdisk lasers on silicon

The small-signal amplitude modulation, threshold, and spectral characteristics of microdisk lasers with InGaAs/GaAs quantum well-dots active region were studied jointly with the spectral and threshold parameters of edge-emitting lasers made from the same epitaxial heterostructure. Using the obtained material parameters, the relative intensity noise of the microdisk lasers was calculated as a function of the bias current and side-mode suppression ratio. It is shown that the integral noise is low enough for error-free optical data transmission with the maximum possible bitrate limited by the microdisk modulation bandwidth, if the bias current is above 1.7× threshold current (for side mode suppression ratio > 20 dB).

Displacement damage effects in proton irradiated vertical-cavity surface-emitting lasers

The displacement damage effects of vertical-cavity surface-emitting lasers (VCSELs) irradiated by 3 and 10 MeV protons in the range of Ф = 6.7×1012 p/cm2 to Ф = 1.6×1014 p/cm2 were investigated. The threshold current exhibited consistent degradation at the same displacement damage dose, as did the series resistance. Additionally, the external quantum efficiencies of 850 and 680 nm VCSELs were degraded by 2% and 21%, respectively. Further, the threshold current of the 850 nm VCSEL was restored by 14% after annealing at 20 mA, which is remarkably higher than that achieved by annealing only at high temperatures. These results support the applicability of VCSELs to both data communication and instrumentation applications in harsh radiation environments.

Optical information processing using dual state quantum dot lasers: complexity through simplicity

We review results on the optical injection of dual state InAs quantum dot-based semiconductor lasers. The two states in question are the so-called ground state and first excited state of the laser. This ability to lase from two different energy states is unique amongst semiconductor lasers and in combination with the high, intrinsic relaxation oscillation damping of the material and the novel, inherent cascade like carrier relaxation process, endows optically injected dual state quantum dot lasers with many unique dynamical properties. Particular attention is paid to fast state switching, antiphase excitability, novel information processing techniques and optothermally induced neuronal phenomena. We compare and contrast some of the physical properties of the system with other optically injected two state devices such as vertical cavity surface emitting lasers and ring lasers. Finally, we offer an outlook on the use of quantum dot material in photonic integrated circuits.