coupled plasmas
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Author(s):  
Jiamao Gao ◽  
Shimin Yu ◽  
Hao Wu ◽  
Yu Wang ◽  
Zhijiang Wang ◽  
...  

Abstract Matching networks are of vital importance for capacitively coupled plasmas to maximize the power transferred to the plasma discharge. The nonlinear interaction between the external circuit and plasma has to be considered to design suitable matching networks. To study the effect of the matching circuit, we coupled PIC/MC model and nonlinear circuit equations based on Kirchhoff’s laws, in a fully nonlinear and self-consistent way. The single-frequency capacitively coupled discharge with ”L”-Type matching networks are simulated. Fully self-consistently results of circuit and plasma parameters are presented and then power absorbed by the plasma and efficiency are calculated. With the tune of the matching network, the efficiency can reach 28.7 %, leading to higher potential as well as higher electron density at fixed source voltage. Besides, only very small components of the third harmonics are found in the plasma voltage and current while surface charge densities have multiple harmonics on account of the strong plasma nonlinearity. Finally, the effects of matching capacitors on discharge are analyzed, results show that smaller Cm1 and Cm2 of 500 pF to 1000 pF may be a proper choice for better matching, resulting in higher voltage across the CCP, and thus higher electron density and power absorption efficiency are obtained.


2021 ◽  
Vol 28 (12) ◽  
pp. 123505
Author(s):  
Shali Yang ◽  
Tianxiang Zhang ◽  
Hanlei Lin ◽  
Hao Wu ◽  
Qiang Zhang

2021 ◽  
Vol 104 (4) ◽  
Author(s):  
Quan-Zhi Zhang ◽  
Jing-Yu Sun ◽  
Wen-Qi Lu ◽  
Julian Schulze ◽  
Yu-Qing Guo ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 5036
Author(s):  
Chulhee Cho ◽  
Kwangho You ◽  
Sijun Kim ◽  
Youngseok Lee ◽  
Jangjae Lee ◽  
...  

Although pulse-modulated plasma has overcome various problems encountered during the development of the high aspect ratio contact hole etching process, there is still a lack of understanding in terms of precisely how the pulse-modulated plasma solves the issues. In this research, to gain insight into previously observed phenomena, SiO2 etching characteristics were investigated under various pulsed plasma conditions and analyzed through plasma diagnostics. Specifically, the disappearance of micro-trenching from the use of pulse-modulated plasma is analyzed via self-bias, and the phenomenon that as power off-time increases, the sidewall angle increases is interpreted via radical species density and self-bias. Further, the change from etching to deposition with decreased peak power during processing is understood via self-bias and electron density. It is expected that this research will provide an informative window for the optimization of SiO2 etching and for basic processing databases including plasma diagnosis for advanced plasma processing simulators.


2021 ◽  
Vol 28 (9) ◽  
pp. 093507
Author(s):  
A. S. Kovalev ◽  
T. V. Rakhimova ◽  
A. T. Rakhimov ◽  
O. V. Proshina ◽  
A. N. Vasilieva ◽  
...  

Author(s):  
Duksun Han ◽  
Jong-Bae Park ◽  
Young-Woo Kim ◽  
Deuk-Chul Kwon ◽  
Sanghoo Park

Author(s):  
Yu‐Qing Guo ◽  
Jing‐Yu Sun ◽  
Quan‐Zhi Zhang ◽  
Fang‐Fang Ma ◽  
Xiang‐Mei Liu ◽  
...  

AIP Advances ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 075024
Author(s):  
R. U. Masheyeva ◽  
K. N. Dzhumagulova ◽  
M. Myrzaly ◽  
J. Schulze ◽  
Z. Donkó

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