tunnel diodes
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2021 ◽  
Author(s):  
Alexandre Bucamp ◽  
Christophe Coinon ◽  
Sylvie Lepilliet ◽  
David Troadec ◽  
Gilles Patriarche ◽  
...  

Abstract In-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by selective area molecular beam epitaxy with two different architectures: either radial InGaAs core / Ga(As)Sb shell nanowires or axial InGaAs/GaSb heterojunctions. In the former case, we unveil the impact of strain relaxation and alloy composition fluctuations at the nanoscale on the tunneling properties of the diodes, whereas in the latter case we demonstrate that template assisted molecular beam epitaxy can be used to achieve a very precise control of tunnel diodes dimensions at the nanoscale with a scalable process. In both cases, negative differential resistances with large peak current densities are achieved.


2021 ◽  
Vol 2103 (1) ◽  
pp. 012194
Author(s):  
E V Kontrosh ◽  
G V Klimko ◽  
V S Kalinovskii ◽  
V S Yuferev ◽  
N V Vaulin ◽  
...  

Abstract Investigations of the temperature stability of the peak tunneling current density of connecting tunneling diodes, which are necessary for the creation on their basis of multijunction photoconverters of powerful optical radiation, have been carried out. The structures of n++-GaAs/i-GaAs/i-AlGaAs/p++-AlGaAs of connecting TD with an intermediate undoped layer thickness of 7.5 nm and a growth temperature of 500 °C (structure ”A”) and with a thickness of 10 nm and a temperature of 450 °C (structure ”B”) were investigated. When heated to 80 °C, an increase in the peak tunneling current density of the TD structure ”B” by 4% is observed. However, for structure ”A”, a decrease in the peak tunneling current density by 5% with heating is observed. The factors leading to the appearance of a negative or positive temperature coefficient of the peak tunneling current density are determined using mathematical modeling of tunneling diodes based on GaAs/AlGaAs materials. By reducing the epitaxial growth temperature of n++–GaAs/i-GaAs/i-AlGaAs/p++–AlGaAs tunnel diode structure to 450 °C and including an undoped i-layer 10 nm thick between the degenerate layers ensure the temperature stability of peak current density when heated to 80 °C.


2021 ◽  
Vol 1851 (1) ◽  
pp. 012021
Author(s):  
E V Kontrosh ◽  
V S Kalinovskii ◽  
G V Klimko ◽  
N V Vaulin ◽  
B Ya Ber
Keyword(s):  

Author(s):  
A. Salhi ◽  
A. Hadfield ◽  
S.G. Muttlak ◽  
J. Sexton ◽  
M.J. Kelly ◽  
...  

2021 ◽  
Vol 118 (6) ◽  
pp. 062101
Author(s):  
M. N. Beattie ◽  
C. E. Valdivia ◽  
M. M. Wilkins ◽  
M. Zamiri ◽  
K. L. C. Kaller ◽  
...  

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