single source precursor
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2022 ◽  
Vol 3 (1) ◽  
pp. 27-40
Author(s):  
Alain E. Kaloyeros ◽  
Jonathan Goff ◽  
Barry Arkles

Stoichiometric silicon carbide (SiC) thin films were grown using thermal chemical vapor deposition (TCVD) from the single source precursor 1,3,5-trisilacyclohexane (TSCH) on c-Si (100) substrates within an optimized substrate temperature window ranging from 650 to 850 °C. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) analyses revealed that the as-deposited films consisted of a Si-C matrix with a Si:C ratio of ~1:1. FTIR and photoluminescence (PL) spectrometry studies showed that films deposited ≥ 750 °C were defect- and H-free within the detection limit of the techniques used, while ellipsometry measurements yielded an as-grown SiC average refractive index of ~2.7, consistent with the reference value for the 3C-SiC phase. The exceptional quality of the films appears sufficient to overcome limitations associated with structural defects ranging from failure in high voltage, high temperature electronics to 2-D film growth. TSCH, a liquid at room temperature with good structural stability during transport and handling as well as high vapor pressure (~10 torr at 25 °C), provides a viable single source precursor for the growth of stoichiometric SiC without the need for post-deposition thermal treatment.


Author(s):  
Peng Gao ◽  
Zhenyu Hu ◽  
Longhui Deng ◽  
Tingjun Wu ◽  
Qikai Li ◽  
...  

The preparation of high-performance thermoelectric thin films can be challenging. Herein, we report the preparation, characterization, and thermoelectric performance of morphology-controlled bismuth sulfide (Bi2S3) thin films using a single-source precursor...


2D Materials ◽  
2021 ◽  
Author(s):  
Yasir Jamal Noori ◽  
Shibin Thomas ◽  
Sami Ramadan ◽  
Victoria Greenacre ◽  
Nema Mohamed Abdelazim ◽  
...  

Abstract The development of scalable techniques to make 2D material heterostructures is a major obstacle that needs to be overcome before these materials can be implemented in device technologies. Electrodeposition is an industrially compatible deposition technique that offers unique advantages in scaling 2D heterostructures. In this work, we demonstrate the electrodeposition of atomic layers of WS2 over graphene electrodes using a single source precursor. Using conventional microfabrication techniques, graphene was patterned to create micro-electrodes where WS2 was site-selectively deposited to form 2D heterostructures. We used various characterization techniques, including atomic force microscopy, transmission electron microscopy, Raman spectroscopy and x-ray photoelectron spectroscopy to show that our electrodeposited WS2 layers are highly uniform and can be grown over graphene at a controllable deposition rate. This technique to selectively deposit TMDCs over microfabricated graphene electrodes paves the way towards wafer-scale production of 2D material heterostructures for nanodevice applications.


Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2000
Author(s):  
Peter A. Ajibade ◽  
Abimbola E. Oluwalana

We report the effect of thermolysis time on the morphological and optical properties of CuS nanoparticles prepared from Cu(II) dithiocarbamate single-source precursor. The as-prepared copper sulfide nanoparticles were used as photocatalysts for the degradation of crystal violet (CV), methylene blue (MB), rhodamine B (RhB), and a ternary mixture of the three dyes (CV/MB/RhB). Powder XRD patterns confirmed the hexagonal covellite phase for the CuS nanoparticles. At the same time, HRTEM images revealed mixed shapes with a particle size of 31.47 nm for CuS1 prepared at 30 min while CuS2 prepared at 1 h consists of mixtures of hexagonal and nanorods shaped particles with an average size of 21.59 nm. Mixed hexagonal and spherically shaped particles with a size of 17.77 nm were obtained for CuS3 prepared at 2 h. The optical bandgaps of the nanoparticles are 3.00 eV for CuS1, 3.26 eV for CuS2 and 3.13 eV for CuS3. The photocatalytic degradation efficiency showed that CuS3 with the smallest particle size is the most efficient photocatalyst and degraded 85% of CV, 100% of MB, and 81% of RhB. The as-prepared CuS showed good stability and recyclability and also degraded ternary dyes mixture (CV/MB/RhB) effectively. The byproducts of the dye degradation were evaluated using ESI-mass spectrometry.


Catalysts ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 899
Author(s):  
Murendeni P. Ravele ◽  
Opeyemi A. Oyewo ◽  
Damian C. Onwudiwe

Pure-phase Cu2−xS (x = 1, 0.2) nanoparticles have been synthesized by the thermal decomposition of copper(II) dithiocarbamate as a single-source precursor in oleylamine as a capping agent. The compositions of the Cu2−xS nanocrystals varied from CuS (covellite) through the mixture of phases (CuS and Cu7.2S4) to Cu9S5 (digenite) by simply varying the temperature of synthesis. The crystallinity and morphology of the copper sulfides were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM), which showed pure phases at low (120 °C) and high (220 °C) temperatures and a mixture of phases at intermediate temperatures (150 and 180 °C). Covellite was of a spherical morphology, while digenite was rod shaped. The optical properties of these nanocrystals were characterized by UV−vis–NIR and photoluminescence spectroscopies. Both samples had very similar absorption spectra but distinguishable fluorescence properties and exhibited a blue shift in their band gap energies compared to bulk Cu2−xS. The pure phases were used as catalysts for the photocatalytic degradation of tetracycline (TC) under visible-light irradiation. The results demonstrated that the photocatalytic activity of the digenite phase exhibited higher catalytic degradation of 98.5% compared to the covellite phase, which showed 88% degradation within the 120 min reaction time using 80 mg of the catalysts. The higher degradation efficiency achieved with the digenite phase was attributed to its higher absorption of the visible light compared to covellite.


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