doped quantum dots
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Author(s):  
Ruixiang Wu ◽  
Xiaoshuai Wang ◽  
Jingjing Luo ◽  
Xin Liu ◽  
Bin Li ◽  
...  

2021 ◽  
Author(s):  
Dongsun Choi ◽  
Juhee Son ◽  
Mihyeon Park ◽  
Joonhyung Lim ◽  
Yun Chang Choi ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Junhui Wang ◽  
Lifeng Wang ◽  
Shuwen Yu ◽  
Tao Ding ◽  
Dongmei Xiang ◽  
...  

AbstractUnderstanding and manipulating hot electron dynamics in semiconductors may enable disruptive energy conversion schemes. Hot electrons in bulk semiconductors usually relax via electron-phonon scattering on a sub-picosecond timescale. Quantum-confined semiconductors such as quantum dots offer a unique platform to prolong hot electron lifetime through their size-tunable electronic structures. Here, we study hot electron relaxation in electron-doped (n-doped) colloidal CdSe quantum dots. For lightly-doped dots we observe a slow 1Pe hot electron relaxation (~10 picosecond) resulting from a Pauli spin blockade of the preoccupying 1Se electron. For heavily-doped dots, a large number of electrons residing in the surface states introduce picosecond Auger recombination which annihilates the valance band hole, allowing us to observe 300-picosecond-long hot electrons as a manifestation of a phonon bottleneck effect. This brings the hot electron energy loss rate to a level of sub-meV per picosecond from a usual level of 1 eV per picosecond. These results offer exciting opportunities of hot electron harvesting by exploiting carrier-carrier, carrier-phonon and spin-spin interactions in doped quantum dots.


Author(s):  
Wenbin Xiang ◽  
Yufen Yuan ◽  
Hongyu Yang ◽  
Yi Zhang ◽  
Jiayu Zhang

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