Training Prospective Nanotechnologists to Select Optimum Solutions for the Nanostructures Synthesis Using the Analytic Hierarchy Process

Nanotechnologists are in great demand and this need is becoming more and more acute every year since nanomaterials have gained widespread acceptance in various industries. The specificity of nanotechnology is determined by a wide variety of existing nanomaterials and technologies for their synthesis. The study suggests an efficient technique for training prospective nanoengineers to make managerial decisions in the synthesis of nanostructures. Moreover, the article demonstrates that using T. Saati's hierarchy analysis method offers the optimum solution for obtaining nanostructures. The analysis is based on the most commonly used synthesis technologies such as chemical etching, photoelectrochemical etching and imprint lithography. The application of T. Saati's method allows prospective nanoengineers to optimize the synthesis of high-quality nanostructures as well as ensure an economic and competitive advantage and reduce the number of errors.

Effects of the Photoelectrochemical Etching in Hydrogen Fluride (HF) on the Optoelectrical Properties of Ga2O3

Photoelectrochemical (PEC) etching is preferred to produce micro-and nano-structures for constructing Ga2O3-based electronics and optoelectronics, owing to its numerous controllable parameters. During the devices fabrications, beyond the wet chemical and dry (plasma) etching produces, PEC etching also leads to device degradations inordinately. In this work, the Ga2O3 thin film was PEC etched by hydrogen fluride (HF) etchant, and its opto-electric deep-ultraviolet sensing performances, including photo-to-dark current ratio, responsivity, and response speed, before and after PEC etching were analyzed and discussed.

Porosification Analysis on the Effect of Resistivity Dependence on N-Type Pulsed Porous Silicon

A set of n-type porous silicon (PS) layers were fabricated by photoelectrochemical etching using direct current (DC) and pulse current (PC) techniques. The study aims to compare the effect of different resistivity (5 Ω and 10 Ω) on the formation of the PS structure. The samples were etched in a solution of HF:C2H6O with a composition ratio of 1:4. The etching process were done for 30 minutes with the current density of J = 10 mA/cm2. In the time of PC etching process, the current was supplied through a pulse generator with 14 ms cycle time (T) which the on time (Ton) set to 10 ms and pause time (Toff) set to 4 ms respectively. The samples were then being characterized in terms of surface morphology by using FESEM, AFM and XRD. Through the FESEM results, it can be seen that sample with 10 Ω resistivity which using PC form a more homogeneous structure of pores as compared to other samples.