Development of Negative Electrode for Calcium Ion Battery Using Marimo Nano Carbon

The problem of calcium-ion batteries (CIBs) using graphite electrodes is that the charge/discharge capacity cannot be sufficiently obtained due to the poor reactivity of Ca2+. In this study, we investigated Marimo Nano Carbon (MNC) as a new negative electrode material for CIBs. MNC was an aggregate of carbon nanofilaments (CNFs) and it was synthesized by decomposition of ethylene using oxidized diamond-supported Pd catalyst. When the charge and discharge capacity using MNC as negative electrode was larger than that of the natural graphite. In addition, the intercalation of Ca2+ between the graphene layers was confirmed by XRD measurement.

Electron affinity of boron-terminated diamond (001) surfaces: a density functional theory study

Boron-terminated bare and oxidized diamond (001) surfaces are first proposed in this paper and are modelled by adsorbing the boron (B) atoms onto the bare and oxidized diamond (001) surfaces, respectively.

Development of a Combined Diamond Impregnated Lapping Plate

This paper presents a combined diamond-impregnated lapping plate for single crystal silicon carbide (SiC) to improve the material removal rate due to SiC having very low material removal rate. Three different dimaond shapes were prepared: (1) "sharp," a sharp-edged diamod; (2) "blocky," a high quality crystalline diamond; (3) "oxidized diamond". The diamonds were manufactured by using high temperature heating method in a furnace to induce diamond oxidation resulting in improvement of Ra and sharpness of the diamonds. Three combined diamond-impregnated lapping plates were fabricated using the above mentioned diamond shapes with diamond size of 6μm. The surface roughness and removal rate of the SiC lapping with these plate were investigated. Experimental results showed that the average material removal rate (MRR) of oxidized diamond is higher than that of the other diamond shapes. The MRR of oxidized diamond for C-face and Si-face SiC are 4.72μm/hr and 6.26μm/hr, respectively. It is found that the surface roughness (Ra) of oxidized diamond for C-face and Si-face are 7.547nm and 8.06nm, respectively. This indicates that the combined diamond-impregnated lapping plate can be effectively used for SiC machining.