wafer fusion
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2021 ◽  
Vol 2103 (1) ◽  
pp. 012176
Author(s):  
S S Rochas ◽  
L Karachinsky Ya ◽  
A V Babichev ◽  
I I Novikov ◽  
A G Gladyshev ◽  
...  

Abstract Vertical-cavity surface-emitting lasers of 1.3 μm spectral range with the active region based on the InGaAs/InGaAlAs superlattice were studied. VCSEL heterostructure was formed by a wafer-fusion of the heterostructure with an active region and two DBRs grown by molecular-beam epitaxy on InP and GaAs substrates respectively. Fabricated VCSELs have shown threshold current below 1.6 mA and frequency of small signal modulation near 9 GHz at 20°C.


2021 ◽  
Vol 2103 (1) ◽  
pp. 012107
Author(s):  
S S Rochas ◽  
I I Novikov ◽  
L Ya Karachinsky ◽  
A V Babichev ◽  
S A Blokhin ◽  
...  

Abstract The paper presents the results of studies of the conditions for the formation of A3B5 compound semiconductors heterointerfaces including InP, InGaAsP and GaAs layers. The heterostructures were grown by molecular-beam epitaxy and were fused by wafer fusion technique. Improvement of planarity and homogeneity over the thickness of heterointerface due to using optimized preliminary preparation of semiconductor wafer surfaces was demonstrated. No additional extended defects such as dislocations were found.


Author(s):  
С.А. Блохин ◽  
М.А. Бобров ◽  
А.А. Блохин ◽  
Н.А. Малеев ◽  
А.Г. Кузьменков ◽  
...  

The analysis of internal optical loss and internal quantum efficiency in 1.3 μm-range InAlGaAsP/AlGaAs a composite n++-InGaAs/р++-InGaAs/р++-InAlGaAs tunnel junction obtained in the frame of molecular-beam epitaxy and wafer fusion technology. The level of internal optical losses in the lasers under study was varied by depositing a dielectric layer on the surface of the output mirror. It is shown that it is possible in principle to achieve low internal optical loss of less than 0.08% and 0.14% per one pass (round-trip) at temperatures of 20°С and 90°С, respectively.


2020 ◽  
Vol 46 (12) ◽  
pp. 1257-1262
Author(s):  
S. A. Blokhin ◽  
M. A. Bobrov ◽  
A. A. Blokhin ◽  
A. P. Vasil’ev ◽  
A. G. Kuz’menkov ◽  
...  

Author(s):  
С.А. Блохин ◽  
М.А. Бобров ◽  
Н.А. Малеев ◽  
А.А. Блохин ◽  
А.Г. Кузьменков ◽  
...  

The design of the n++-InGaAs/р++-InGaAs/р++-InAlGaAs tunnel junction (TJ) for 1.55 μm range vertical-cavity surface-emitting lasers (VCSELs), developed by wafer fusion technique of InAlGaAsP/InP optical cavity with AlGaAs/GaAs distributed Bragg reflectors is proposed and realized. The presence of oxidation-resistant InGaAs layers allows the use of molecular-beam epitaxy at all stages of the heterostructure fabrication, including for regrowth of the TJ surface relief. In the case of using the n++-InGaAs/р++-InGaAs/р++-InAlGaAs TJ, a noticeable increase in the internal optical losses compared to the n++/р++-InAlGaAs TJ design was not obtained. The increase in internal optical loss in lasers can be avoided due to Burshtein-Moss effect in n++-InGaAs layers and thickness minimization of р++-InGaAs layer. As a result, the characteristics of fabricated lasers are comparable with characteristics of VCSELs with n++/p++-InAlGaAs TJ with a similar level of mirror losses.


ACS Photonics ◽  
2017 ◽  
Vol 4 (8) ◽  
pp. 2018-2024 ◽  
Author(s):  
Philip Wolf ◽  
Hui Li ◽  
Andrei Caliman ◽  
Alexandru Mereuta ◽  
Vladimir Iakovlev ◽  
...  

Author(s):  
A. Mereuta ◽  
A. Caliman ◽  
P. Wolf ◽  
A. Sirbu ◽  
V. Iakovlev ◽  
...  
Keyword(s):  

2015 ◽  
Vol 27 (5) ◽  
pp. 466-469
Author(s):  
Vaibhav Mathur ◽  
Shivashankar Vangala

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