Porous SiC and SiC/Cf Ceramic Microspheres Derived from Polyhydromethylsiloxane by Carbothermal Reduction

A simple and inexpensive method for the preparation of porous SiC microspheres is presented. Polysiloxane microspheres derived from polyhydromethylsiloxane (PHMS) cross-linked with divinylbenzene (DVB) were ceramized under conditions leading to the removal of oxygen from the material. The content of free carbon (Cf) in highly crystalline silicon carbide (SiC) particles can be controlled by using various proportions of DVB in the synthesis of the pre-ceramic material. The chemical structure of the ceramic microspheres was studied by elemental analysis for carbon and oxygen, 29Si MAS NMR, 13C MAS NMR, SEM/EDS, XRD and Raman spectroscopies, and their morphology by SEM, nitrogen adsorption and mercury intrusion porosimetries. The gaseous products of the thermal reduction processes formed during ceramization created a porous structure of the microspheres. In the SiC/Cf microspheres, meso/micro pores were formed, while in carbon-free SiC, microspheres macroporosity dominated.

Improved passivation depth of porous fluorescent 6H-SiC with Si/C faces using atomic layer deposition

We investigated the effects of different growth facets of 6H-SiC and different voltage waveforms on the porous structure and luminescence properties. The structure formed on the surface after anodic etching significantly changed because of the difference in the growth plane, whereas dendritic and columnar pores were observed inside the Si- and C-face samples. These large porous structures were shown to promote the penetration depth of the atomic-layer-deposited Al2O3 films, and a recorded passivation depth of 30-µm layer was confirmed in C-face porous SiC. From the results using fluorescence microscope and PL spectra measurement, it was concluded that the pulsed-voltage etching was preferable for fabricating uniform porous structures compared with the constant-voltage etching. However, the enhancement of the luminescence intensity needs to be further improved to realize high luminescent efficiency in porous fluorescent SiC.