scholarly journals The Study on Business Growth Process Management Entropy Model

2012 ◽  
Vol 24 ◽  
pp. 2105-2110 ◽  
Author(s):  
Duan Jing
Keyword(s):  
Growth Process ◽  
Process Management ◽  
Business Growth ◽  
Entropy Model ◽  
Management Entropy

A Research on Management Entropy Model and Its Application in the Process of Business Growth

2010 ◽  
Vol 33 ◽  
pp. 709-713
Author(s):  
M.L. Zhang
Keyword(s):  
Decision Making ◽  
Influencing Factors ◽  
Growth Stage ◽  
Business Management ◽  
Entropy Theory ◽  
Business Growth ◽  
Stages Of Development ◽  
Entropy Model ◽  
Business Size ◽  
Management Entropy

From creation to the bankrupt of company, it will experience a series of intermediate stages of development. Growth stage is the key one during the process of enterprise’s changing rapidly. With the characters of business growth stage, this pa rise’s changing from weak to strong. In this stage, enterprise rises quickly whose influencing factors are per brings in entropy theory. Based on size, complexity, stability of enterprise, the paper establishes a kind of model of measuring and calculating business management entropy around business size, enterprise capacity and developing speed. The model will supply theoretical direction for decision making activities of business growth stage.

scholarly journals BUSINESS GROWTH MANAGEMENT IN REPUBLIC OF SRPSKA

2021 ◽  
Vol 19 (34) ◽  
Author(s):  
Saša Vučenović ◽  
Branka Zolak Poljašević ◽  
Igor Mišić
Keyword(s):  
Growth Process ◽  
Growth Management ◽  
Arithmetic Mean ◽  
Sustainable Growth ◽  
Asymmetric Distribution ◽  
Small Enterprises ◽  
Business Growth ◽  
Business Policy ◽  
Sustainable Growth Rate ◽  
A Company

The research methodology starts from the calcu- lation of the coefficient for each individual com- pany in order to obtain the indicators by calculat- ing the arithmetic mean, median and quartile. As econometric stochastic models have little value for predicting or explaining the growth process at the level of individual companies, the central subject of interest is understanding the growth process at the level of an individual company. The sustainable growth rate of a company depends on the activity of the company. Numerous factors can affect the growth of a company, but the influence of individu- al factors on the growth of a company is rarely sig- nificant and permanent. The results of the research indicate a very asymmetric distribution of the size of enterprises, with a small number of large enter- prises and a large number of small enterprises. The model of sustainable growth is an effective tool for financial planning and directing business policy to- wards stimulating growth in certain industries.

Fundamental Research into Thin Films in a Developing Country

1972 ◽  
Vol 30 ◽  
pp. 500-501
Author(s):  
J.A. Eades ◽  
E. Grünbaum
Keyword(s):  
Thin Films ◽  
Growth Process ◽  
Empirical Process ◽  
Nucleation And Growth ◽  
Research Groups ◽  
Film Research ◽  
Fundamental Research ◽  
Controlled Deposition ◽  
The One ◽  
The University

In the last decade and a half, thin film research, particularly research into problems associated with epitaxy, has developed from a simple empirical process of determining the conditions for epitaxy into a complex analytical and experimental study of the nucleation and growth process on the one hand and a technology of very great importance on the other. During this period the thin films group of the University of Chile has studied the epitaxy of metals on metal and insulating substrates. The development of the group, one of the first research groups in physics to be established in the country, has parallelled the increasing complexity of the field.The elaborate techniques and equipment now needed for research into thin films may be illustrated by considering the plant and facilities of this group as characteristic of a good system for the controlled deposition and study of thin films.

UHV-STM studies of silicon nano-pyramid growth on silicon surface at high temperature

1992 ◽  
Vol 50 (2) ◽  
pp. 1144-1145
Author(s):  
T. Sato ◽  
S. Kitamura ◽  
T. Sueyoshl ◽  
M. Iwatukl ◽  
C. Nielsen
Keyword(s):  
High Temperature ◽  
Relaxation Process ◽  
Thermal Effect ◽  
Bias Voltage ◽  
Silicon Surface ◽  
Growth Process ◽  
Tunneling Current ◽  
Fabrication Technique ◽  
Nano Fabrication ◽  
Electromigration Effect

Recently, the growth process and relaxation process of crystalline structures were studied by observing a SI nano-pyramid which was built on a Si surface with a UHV-STM. A UHV-STM (JEOL JSTM-4000×V) was used for studying a heated specimen, and the specimen was kept at high temperature during observation. In this study, the nano-fabrication technique utilizing the electromigration effect between the STM tip and the specimen was applied. We observed Si atoms migrated towords the tip on a high temperature Si surface.Clean surfaces of Si(lll)7×7 and Si(001)2×l were prepared In the UHV-STM at a temperature of approximately 600 °C. A Si nano-pyramid was built on the Si surface at a tunneling current of l0nA and a specimen bias voltage of approximately 0V in both polarities. During the formation of the pyramid, Images could not be observed because the tip was stopped on the sample. After the formation was completed, the pyramid Image was observed with the same tip. After Imaging was started again, the relaxation process of the pyramid started due to thermal effect.

Effects of substrate quality and annealing on defect structures at GaAs/Si interfaces

1987 ◽  
Vol 45 ◽  
pp. 340-341
Author(s):  
H. L. Tsai ◽  
J. W. Lee
Keyword(s):  
Growth Process ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Lattice Misfit ◽  
Device Fabrication ◽  
Silicon Substrates ◽  
Defect Structures ◽  
Gaas Film ◽  
Substrate Quality ◽  
Gaas On Si

Growth of GaAs on Si using epitaxial techniques has been receiving considerable attention for its potential application in device fabrication. However, because of the 4% lattice misfit between GaAs and Si, defect generation at the GaAs/Si interface and its propagation to the top portion of the GaAs film occur during the growth process. The performance of a device fabricated in the GaAs-on-Si film can be degraded because of the presence of these defects. This paper describes a HREM study of the effects of both the substrate surface quality and postannealing on the defect propagation and elimination.The silicon substrates used for this work were 3-4 degrees off [100] orientation. GaAs was grown on the silicon substrate by molecular beam epitaxy (MBE).

The Human Growth Process from Infancy to Maturity

1990 ◽  
Vol 17 (1) ◽  
pp. 7-12 ◽  
Author(s):  
Maher M. Anous ◽  
Haskell Gruber
Keyword(s):  
Growth Process ◽  
Human Growth
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