scholarly journals The Hydrogenation Impact on Electronic Properties of p-Diamond/n-Si Heterojunctions

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6615
Author(s):  
Szymon Łoś ◽  
Kazimierz Fabisiak ◽  
Kazimierz Paprocki ◽  
Mirosław Szybowicz ◽  
Anna Dychalska ◽  
...  

The undoped polycrystalline diamond films (PDFs) have been deposited on n-type silicon (Si) by Hot Filament Chemical Vapor Deposition (HF CVD) technique. The reaction gases are a mixture of methane and hydrogen. The obtained PDFs were characterized by scanning electron microscopy (SEM) and Raman spectroscopy which, in addition to the diamond phase, also confirms the presence of sp2 hybridized carbon bonds. As-grown CVD diamond layers are hydrogen terminated and show p-type conductivity. The effect of the level of hydrogenation on the electrical properties of p-diamond/n-Si heterojunctions has been investigated by temperature dependent current–voltage (J-V/T) characteristics. The obtained results suggest that the energy distribution of interface states at the grain boundary (GB) subjected to hydrogenation becomes shallower, and the hole capture cross-section can be reduced. Hydrogenation can lead to a significant reduction of the GB potential barrier. These results can be interesting from the point of view of hydrogen passivation of GBs in microelectronics.

2018 ◽  
Vol 35 (4) ◽  
pp. 830-837 ◽  
Author(s):  
Agnieszka Banaszak-Piechowska ◽  
Kazimierz Fabisiak ◽  
Elżbieta Staryga ◽  
Kazimierz Paprocki

Abstract The influence of diamond crystallinity and preferred orientation on electronic conductivity of synthetic diamond films grown by hot filament chemical vapor deposition (HFCVD) was investigated. The CVD diamond films of different morphologies and crystallite sizes varying from 36 nm to 67 nm, measured in h2 2 0i direction were considered. The charge transport mechanism in the diamond samples was studied using temperature dependent DC conductivity measurements. The obtained results showed that in the temperature range of 90 K to 300 K charge transport is realized via Variable Range Hopping (VRH, m = 1/4) mechanism. Using VRH model, the Mott parameters were evaluated i.e. density of states at Fermi level N(EF) (0.22 × 1015 eV-1·cm-3 to 1.7 × 1015 eV-1·cm-3), hopping energy W (43.5 meV to 142.3 meV) and average hopping distance R (1.49 × 10-5cm to 2.56 × 10-5cm). It was shown that above mentioned parameters strongly depend on diamond film preferential orientation.


1996 ◽  
Vol 11 (7) ◽  
pp. 1765-1775 ◽  
Author(s):  
James M. Olson ◽  
Michael J. Dawes

Thin diamond film coated WC-Co cutting tool inserts were produced using arc-jet and hot-filament chemical vapor deposition. The diamond films were characterized using SEM, XRD, and Raman spectroscopy to examine crystal structure, fracture mode, thickness, crystalline orientation, diamond quality, and residual stress. The performance of the tools was evaluated by comparing the wear resistance of the materials to brazed polycrystalline diamond-tipped cutting tool inserts (PCD) while machining A390 aluminum (18% silicon). Results from the experiments carried out in this study suggest that the wear resistance of the thin diamond films is primarily related to the grain boundary strength, crystal orientation, and the density of microdefects in the diamond film.


1994 ◽  
Vol 3 (4-6) ◽  
pp. 618-622 ◽  
Author(s):  
Takashi Sugino ◽  
Kiyoshi Karasutani ◽  
Fumihiro Mano ◽  
Hiroya Kataoka ◽  
Junji Shirafuji ◽  
...  

2012 ◽  
Vol 499 ◽  
pp. 366-371 ◽  
Author(s):  
Jian Guo Zhang ◽  
Ben Wang ◽  
Fang Hong Sun ◽  
Hang Gao

Carbon fiber reinforced plastics (CFRP) is difficult to machine because of the extremely abrasive nature of the carbon fibers and its low thermal conductivity. CVD diamond films have many excellent properties such as wonderful wear resistance, high thermal conductivity and low friction coefficient, therefore depositing diamond films on the surface of drills is thought to be an effective way to elongate the lifetime of drills and improve the cutting performance. In this study, diamond films are deposited on the WC-Co drill using hot filament chemical vapor deposition (HFCVD) method. The results of characterization by the scanning electron microscope (SEM) and Raman spectrum indicate that the fabricated CVD diamond coated drill is covered with a layer of uniform and high-purity diamond films. The cutting performance of as-fabricated CVD diamond coated drill is evaluated in dry drilling CFRP, comparing with the uncoated WC-Co drill. The results demonstrate that the CVD diamond coated drill exhibits much stronger wear resistance. Its flank wear is about 50μm after drilling 30 holes, about one-third of that of WC-Co drill. Machining quality of the exit and internal wall of drilled holes shows better surface finish obtained by coated drill, which suggests that CVD diamond coated tool has great advantages in drilling CFRP.


2010 ◽  
Vol 663-665 ◽  
pp. 625-628
Author(s):  
Fu Yuan Xia ◽  
Lin Jun Wang ◽  
Jian Huang ◽  
Ke Tang ◽  
Ji Jun Zhang ◽  
...  

Undoped high quality polycrystalline diamond films were grown by the microwave plasma chemical vapor deposition (MPCVD) method. The effects of hydrogen plasma treatment and vacuum annealing process on the p-type behavior of diamond films were investigated by the Hall effect method. The sheet carrier concentration increased and the sheet resistivity decreased with the treating time of hydrogen plasma and a stable value was achieved finally. After annealing the samples in vacuum at temperature above 600 °C, the sheet carrier concentration dropped dramatically. The origin of this hydrogen terminated p-type conductive layers is also discussed.


2011 ◽  
Vol 175 ◽  
pp. 219-225 ◽  
Author(s):  
Xin Chang Wang ◽  
Bin Shen ◽  
Fang Hong Sun

Relief valves used in the coal liquefaction equipment are running in an extremely harsh environment with extraordinarily high temperature, high pressure differential, high fluid velocity as well as the intensely slurry flow erosion. The lifetime of relief valves is critically important to the reliability and running cost of the coal liquefaction equipment. Diamond film is potentially used as wear-resistant and protective coating for the relief valve components in coal liquefaction equipment due to its outstanding mechanical and tribological properties. In present study, a layer of high-quality diamond films are deposited on the working surface of conventional WC-Co cemented carbide relief valve components, using the hot filament chemical vapor deposition (HFCVD) technique. Two different types of hot filament arrangements are respectively adopted for depositing diamond films on the interior surface of valve seat and outer surface of valve spool. The fabricated CVD diamond coated relief valve components are characterized using Scanning electron microscope (SEM), X-ray diffraction spectroscopy (XRD), and Raman spectroscopy. The results exhibit that working surfaces of both valve seat and spool are covered by a layer of continuous, homogeneous diamond films on which well-faceted diamond grains with grain size of ~2-3 μm distribute. Furthermore, the fabricated relief valve components are equipped on a coal liquefaction facility and their performance is evaluated in real production. The results present that the working lifetime is largely elongated up to ~1200 hours, as more than three times as that of conventional tungsten carbide valve components.


2012 ◽  
Vol 217-219 ◽  
pp. 1013-1017
Author(s):  
Y.X. Cui ◽  
B. Shen ◽  
F.H. Sun ◽  
Z.M. Zhang

Si doped CVD diamond films are prepared on Si substrate by means of hot filament chemical vapor deposition (HFCVD) through adding tetraethoxysilane (TEOS) into acetone as source of reactant gas during the growth process. The samples of diamond films are investigated by scanning electron micrograph (SEM), Raman spectrum, X-ray diffractometry (XRD) and surface profiler. The experimental results show that compared with pure diamond film, Si doped CVD diamond film exhibits grain refinement and smoother surface. Then selective area deposition (SAD) of B-doped diamond films are achieved on both Si doped CVD diamond film and pure CVD diamond film with silicon dioxide layer as sacrificial layer. SEM investigation demonstrates that the boundary of patterning on pure diamond film is rather fuzzy while on pure diamond film it is trim and distinct, which is mainly attributed to the relatively low surface roughness.


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