scholarly journals In situ growth optimization in focused electron-beam induced deposition

2013 ◽  
Vol 4 ◽  
pp. 919-926 ◽  
Author(s):  
Paul M Weirich ◽  
Marcel Winhold ◽  
Christian H Schwalb ◽  
Michael Huth

We present the application of an evolutionary genetic algorithm for the in situ optimization of nanostructures that are prepared by focused electron-beam-induced deposition (FEBID). It allows us to tune the properties of the deposits towards the highest conductivity by using the time gradient of the measured in situ rate of change of conductance as the fitness parameter for the algorithm. The effectiveness of the procedure is presented for the precursor W(CO)6 as well as for post-treatment of Pt–C deposits, which were obtained by the dissociation of MeCpPt(Me)3. For W(CO)6-based structures an increase of conductivity by one order of magnitude can be achieved, whereas the effect for MeCpPt(Me)3 is largely suppressed. The presented technique can be applied to all beam-induced deposition processes and has great potential for a further optimization or tuning of parameters for nanostructures that are prepared by FEBID or related techniques.

2019 ◽  
Author(s):  
Javier Pablo-Navarro ◽  
Robert Winkler ◽  
Georg Haberfehlner ◽  
César Magén ◽  
Harald Plank ◽  
...  

1996 ◽  
Vol 36 (11-12) ◽  
pp. 1779-1782 ◽  
Author(s):  
S. Lipp ◽  
L. Frey ◽  
C. Lehrer ◽  
E. Demm ◽  
S. Pauthner ◽  
...  

2016 ◽  
Vol 23 (2) ◽  
pp. 321-328 ◽  
Author(s):  
David R. Diercks ◽  
Brian P. Gorman ◽  
Johannes J. L. Mulders

AbstractSix precursors were evaluated for use as in situ electron beam-induced deposition capping layers in the preparation of atom probe tomography specimens with a focus on near-surface features where some of the deposition is retained at the specimen apex. Specimens were prepared by deposition of each precursor onto silicon posts and shaped into sub-70-nm radii needles using a focused ion beam. The utility of the depositions was assessed using several criteria including composition and uniformity, evaporation behavior and evaporation fields, and depth of Ga+ ion penetration. Atom probe analyses through depositions of methyl cyclopentadienyl platinum trimethyl, palladium hexafluoroacetylacetonate, and dimethyl-gold-acetylacetonate [Me2Au(acac)] were all found to result in tip fracture at voltages exceeding 3 kV. Examination of the deposition using Me2Au(acac) plus flowing O2 was inconclusive due to evaporation of surface silicon from below the deposition under all analysis conditions. Dicobalt octacarbonyl [Co2(CO)8] and diiron nonacarbonyl [Fe2(CO)9] depositions were found to be effective as in situ capping materials for the silicon specimens. Their very different evaporation fields [36 V/nm for Co2(CO)8 and 21 V/nm for Fe2(CO)9] provide options for achieving reasonably close matching of the evaporation field between the capping material and many materials of interest.


2014 ◽  
Vol 1 (1) ◽  
Author(s):  
M. Winhold ◽  
P. M. Weirich ◽  
C. H. Schwalb ◽  
M. Huth

AbstractFocused electron beam induced deposition presents a promising technique for the fabrication of nanostructures. However, due to the dissociation of mostly organometallic precursor molecules employed for the deposition process, prepared nanostructures contain organic residues leading to rather low conductance of the deposits. Post-growth treatment of the structures by electron irradiation or in reactive atmospheres at elevated temperatures can be applied to purify the samples. Recently, an in-situ conductance optimization process involving evolutionary genetic algorithm techniques has been introduced leading to an increase of conductance by one order of magnitude for tungsten-based deposits using the precursor W(CO)6. This method even allows for the optimization of conductance of nano-structures for which post-growth treatment is not possible or desirable. However, the mechanisms responsible for the observed enhancement have not been studied in depth. In this work, we identified the dwell-time dependent change of conductivity of the samples to be the major contributor to the change of conductance. Specifically, the chemical composition drastically changes with a variation of dwelltime resulting in an increase of the metal content by 15 at% for short dwell-times. The relative change of growth rate amounts to less than 25 % and has a negligible influence on conductance. We anticipate the in-situ genetic algorithm optimization procedure to be of high relevance for new developments regarding binary or ternary systems prepared by focused electron or ion beam induced deposition.


2019 ◽  
Vol 174 ◽  
pp. 379-386 ◽  
Author(s):  
Javier Pablo-Navarro ◽  
Robert Winkler ◽  
Georg Haberfehlner ◽  
César Magén ◽  
Harald Plank ◽  
...  

2006 ◽  
Vol 12 (S02) ◽  
pp. 546-547
Author(s):  
CM Wang ◽  
DR Baer ◽  
JE Amonette ◽  
MH Engelhard ◽  
JJ Antony ◽  
...  

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2005


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