memory element
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Author(s):  
Chaudhry Indra Kumar

The energy-efficient circuits, though important in IoT and biomedical applications, are vulnerable to soft errors due to their low voltages and small node capacitances. This paper presents an energy-efficient low-area double-node-upset-hardened latch (EEDHL). The proposed latch enhances the radiation hardness by employing a restorer circuit based on a Muller C-element and a memory element. The post-layout simulations show that the EEDHL improves the area–energy–delay product (AEDP) by [Formula: see text]80% compared to the newly reported double-node-upset-resilient latch (DNURL) in STMicroelectronics 65-nm CMOS technology. Synopsys TCAD mixed-mode simulations in 32-nm CMOS technology framework are also used to validate the proposed DNU-hardened latch. The proposed EEDHL effectively mitigates the DNU at the strike with a linear energy transfer (LET) equal to 160[Formula: see text][Formula: see text]/mg in 32-nm CMOS technology.


Author(s):  
Toktar Belgibayev ◽  
Yury Shukrinov ◽  
Andrej Plecenik ◽  
Jiri Pechousek ◽  
Cestmir Burdik

Abstract We have investigated the dynamics of magnetization under a current pulse in a φ0 - junction with a direct coupling between the magnetic moment and the superconducting current. The correspondence between the magnetization value at the end of the pulse mz * and the realization of the magnetization reversal along the easy axis of the ferromagnetic is considered. The crucial influence of the ratio w of the ferromagnetic frequency to the characteristic frequency of the Josephson junction on the results of reversal predictions is demonstrated. Effect of w magnitude on the manifestation of periodicity bands in the mz * dependence on the model parameters is shown. There is a critical value of the Gilbert damping, above which the magnetization reversal is not realized. It is shown that at small w the magnitude mz * can be as a criterion of magnetization reversal. I.e., if mz * <0, the magnetization reversal would happen with 100 percent probability. The results can be used in various areas of superconducting spintronics, in particular, to create a memory element based on the Josephson $ {\varphi_0} $ junction


Author(s):  
Kousik Mukherjee ◽  
Anjan Samanta ◽  
Paresh Chandra Jana

In this paper, we discuss a possibility to realize the optical bistability in a rotating semiconductor micro-cavity system. To study the mean cavity photon number profile, we have obtained stationary solution by solving Heisenberg–Langevin equations of motion. In a rotating semiconductor micro-cavity system, bistability is observed when the cavity is driven externally in one direction but not the other direction. The bistable behavior is possible for strong coupling regime, and this can be controlled by hopping strength, decay rates and pump power. The photon profile also shows tunable zero intensity window. The system may be useful to design all-optical switch and optical flip–flop i.e., optical memory element, which would be faster in applications and compact in size.


Optik ◽  
2021 ◽  
pp. 168493
Author(s):  
Ankur Saharia ◽  
Nitesh Mudgal ◽  
Kamal Kishor Choure ◽  
Ravikumar Maddila ◽  
Manish Tiwari ◽  
...  

2021 ◽  
Author(s):  
Ya Li ◽  
Lijun Xie ◽  
Ciyan Zheng ◽  
Dongsheng Yu ◽  
Jason K. Eshraghian

Abstract Fractional-order systems generalize classical differential systems and have empirically shown to achieve fine-grain modeling of the temporal dynamics and frequency responses of certain real-world phenomena. Although the study of integer-order memory element (mem-element) emulators has persisted for several years, the study of fractional-order memory elements (FOMEs) has received little attention. To promote the study of the characteristics and applications of mem-element systems in fractional calculus (FC) and memory systems, in this paper, we propose a novel universal interface for constructing floating FOMEs. When the topological structure of the interface remains unchanged, the floating fractional-order memristor (FOMR), fractional-order memcapacitor (FOMC) and fractional-order meminductor (FOMI) emulators can be realized by using the impedance combinations of different passive elements, without any mem-element emulators and mutators. When compared with previously proposed FOMEs, the proposed fractional-order mem-element emulators based on a universal interface not only feature the characteristics of floating terminals and simpler circuit structures, but can also realize all three different types of FOMEs. To explore the dynamical relationships between the mem-elements and the fractional order, we mathematically derive and analyze the maximum and minimum possible values of memductance, memcapacitance and inverse meminductance which accounts for practical design considerations when building FO systems. The memory characteristics of FOMEs are analyzed by varying their orders and stimuli frequencies. The consistency of theoretical analysis, numerical calculation and simulation results validates the correctness of our proposed emulators.


SPIN ◽  
2021 ◽  
Author(s):  
Farzad Razi ◽  
Mohammad Hossein Moaiyeri ◽  
Siamak Mohammadi

Logic-in memory has emerged as a promising solution to reduce the significant time gap between processor and memory. Simple logics such as NOR and NAND can be embedded in the memory for the purpose of data processing. Besides, ternary logic has been suggested to reduce the interconnects and the complexity of operations. In this paper, a reconfigurable ternary NOR/NAND logic compatible with ternary memories has been proposed. This scheme exploits magnetic tunnel junction as a nonvolatile memory element and a variable resistance, and carbon nanotube field-effect transistor for designing the peripheral circuits to achieve performance and efficiency. The proposed circuit is simulated using HSPICE and the results have validated the correct operation and high performance of the proposed design. Furthermore, the proposed designs are exploited in image processing applications to evaluate their performance in real applications, which gain averagely 52% improvement in the case of data loss.


2021 ◽  
Vol 2021 ◽  
pp. 1-21
Author(s):  
Shahram Rezapour ◽  
Chernet Tuge Deressa ◽  
Sina Etemad

Memristor is a nonlinear and memory element that has a future of replacing resistors for nonlinear circuit computation. It exhibits complex properties such as chaos and hyperchaos. A five-dimensional memristor-based circuit in the context of a nonlocal and nonsingular fractional derivative is considered for analysis. The Banach fixed point theorem and contraction principle are utilized to verify the existence and uniqueness of the solution of the five-dimensional system. A numerical method developed by Toufik and Atangana is used to get approximate solutions of the system. Local stability analysis is examined using the Matignon fractional-order stability criteria, and it is shown that the trivial equilibrium point is unstable. The Lyapunov exponents for different fractional orders exposed that the nature of the five-dimensional fractional-order system is hyperchaotic. Bifurcation diagrams are obtained by varying the fractional order and two of the parameters in the model. It is shown using phase-space portraits and time-series orbit figures that the system is sensitive to derivative order change, parameter change, and small initial condition change. Master-slave synchronization of the hyperchaotic system was established, the error analysis was made, and the simulation results of the synchronized systems revealed a strong correlation among themselves.


2021 ◽  
Author(s):  
Yanxi Zhang ◽  
Eveline van Doremaele ◽  
Gang Ye ◽  
Tim Stevens ◽  
Jun Song ◽  
...  

Organic mixed ionic-electronic conductors (OMIECs) are central to bioelectronic applications such as biosensors, health monitoring devices and neural interfaces, and have facilitated efficient next-generation brain-inspired computing and biohybrid systems. Most OMIECs are hole-conducting (p-type) materials, while complimentary logic circuits and various biosensors require electron-conducting (n-type) materials too. Here we show an ambipolar mixed ionic-electronic polymer that achieves high on/off ratios with high ambient p- and n- type stability. We highlight the versatility of the material by demonstrating its use as a neuromorphic memory element, an adaptable ambipolar complementary logic inverter, and a neurotransmitter sensor. The ambipolar operation of this material allows for straightforward monolithic fabrication and integration, and opens a route towards more sophisticated complex logic and adaptive circuits.


2021 ◽  
Vol 2021 (1) ◽  
Author(s):  
Chernet Tuge Deressa ◽  
Sina Etemad ◽  
Shahram Rezapour

AbstractA memristor is naturally a nonlinear and at the same time memory element that may substitute resistors for next-generation nonlinear computational circuits that can show complex behaviors including chaos. A four-dimensional memristor system with the Atangana–Baleanu fractional nonsingular operator in the sense of Caputo is investigated. The Banach fixed point theorem for contraction principle is used to verify the existence–uniqueness of the fractional representation of the given system. A newly developed numerical scheme for fractional-order systems introduced by Toufik and Atangana is utilized to obtain the phase portraits of the suggested system for different fractional derivative orders and different parameter values of the system. Analysis on the local stability of the fractional model via the Matignon criteria showed that the trivial equilibrium point is unstable. The dynamics of the system are investigated using Lyapunov exponents for the characterization of the nature of the chaos and to verify the dissipativity of the system. It is shown that the supposed system is chaotic and it is significantly sensitive to parameter variation and small initial condition changes.


Quantum ◽  
2021 ◽  
Vol 5 ◽  
pp. 545
Author(s):  
Salvatore Tirone ◽  
Maddalena Ghio ◽  
Giulia Livieri ◽  
Vittorio Giovannetti ◽  
Stefano Marmi

The main purpose of this study is to introduce a semi-classical model describing betting scenarios in which, at variance with conventional approaches, the payoff of the gambler is encoded into the internal degrees of freedom of a quantum memory element. In our scheme, we assume that the invested capital is explicitly associated with the quantum analog of the free-energy (i.e. ergotropy functional by Allahverdyan, Balian, and Nieuwenhuizen) of a single mode of the electromagnetic radiation which, depending on the outcome of the betting, experiences attenuation or amplification processes which model losses and winning events. The resulting stochastic evolution of the quantum memory resembles the dynamics of random lasing which we characterize within the theoretical setting of Bosonic Gaussian channels. As in the classical Kelly Criterion for optimal betting, we define the asymptotic doubling rate of the model and identify the optimal gambling strategy for fixed odds and probabilities of winning. The performance of the model are hence studied as a function of the input capital state under the assumption that the latter belongs to the set of Gaussian density matrices (i.e. displaced, squeezed thermal Gibbs states) revealing that the best option for the gambler is to devote all their initial resources into coherent state amplitude.


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