High-Hole-Mobility Metal–Organic Framework as Dopant-Free Hole Transport Layer for Perovskite Solar Cells

A dopant-free hole transport layer with high mobility and a low-temperature process is desired for optoelectronic devices. Here, we study a metal–organic framework material with high hole mobility and strong hole extraction capability as an ideal hole transport layer for perovskite solar cells. By utilizing lifting-up method, the thickness controllable floating film of Ni3(2,3,6,7,10,11-hexaiminotriphenylene)2 at the gas–liquid interface is transferred onto ITO-coated glass substrate. The Ni3(2,3,6,7,10,11-hexaiminotriphenylene)2 film demonstrates high compactness and uniformity. The root-mean-square roughness of the film is 5.5 nm. The ultraviolet photoelectron spectroscopy and the steady-state photoluminescence spectra exhibit the Ni3(HITP)2 film can effectively transfer holes from perovskite film to anode. The perovskite solar cells based on Ni3(HITP)2 as a dopant-free hole transport layer achieve a champion power conversion efficiency of 10.3%. This work broadens the application of metal–organic frameworks in the field of perovskite solar cells. Graphical Abstract

Face-On Oriented Hydrophobic Conjugated Polymers as Dopant-Free Hole-Transport Materials for Efficient and Stable Perovskite Solar Cells with Fill Factor Approaching 85%

Developing high-performance dopant-free hole transport material (DF-HTM) is critical to realizing stable perovskite solar cells (PSCs). Herein, a class of siloxane-terminated polymers (PBZ-Si) with low surface energy were studied as...

Dopant-Free Hole Transport Material Boosting the Performance of Inverted Methylamine-Free Perovskite Solar Cells

The great progress in power conversion efficiency (PCE) for methylamine (MA)-free inverted perovskite solar cells (PSCs) is inseparable from the rapid development of the hole transport layers (HTLs). We design...

Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes

In the past years, light-emitting diodes (LED) made of GaN and its related ternary compounds with indium and aluminium have become an enabling technology in all areas of lighting. Visible LEDs have yet matured, but research on deep ultraviolet (UV) LEDs is still in progress. The polarisation in the anisotropic wurtzite lattice and the low free hole density in p-doped III-nitride compounds with high aluminium content make the design for high efficiency a critical step. The growth kinetics of the rather thin active quantum wells in III-nitride LEDs makes them prone to inhomogeneous broadening (IHB). Physical modelling of the active region of III-nitride LEDs supports the optimisation by revealing the opaque active region physics. In this work, we analyse the impact of the IHB on the luminescence and carrier transport III-nitride LEDs with multi-quantum well (MQW) active regions by numerical simulations comparing them to experimental results. The IHB is modelled with a statistical model that enables efficient and deterministic simulations. We analyse how the lumped electronic characteristics including the quantum efficiency and the diode ideality factor are related to the IHB and discuss how they can be used in the optimisation process.

Substituents interplay in piperidinyl-perylenediimide as dopant-free hole-selective layer for perovskite solar cells fabrication

The charge selective layer is of significance for the fabrication of emerging photovoltaics, including perovskite-based solar cells. Molecular hole transport materials (HTMs) are being employed as charge transporters, owing to their synthetic molecular flexibility that allows the fine-tuning of their electro-optical properties. Typically, doping of HTMs is essential, but it is a trade-off between long-term durability and device performance. The energetic level of perylenediimides (PDIs) was altered by the position of the substituent. The substituent’s position influences the geometry of the PDI core, which can lose planarity, thus presenting a core twist angle between the two naphthalene subunits to find its application as hole-selective layers for fabrication. We have fabricated perovskite solar cells, with pristine PDI, and it gave a competitive performance. New design protocols for PDIs are required for aligned energetic levels, which will minimize recombination losses in solar cells, favoring a performance enhancement. Graphical abstract