Effect of Aluminum Doping Ratios on the Properties of Aluminum-Doped Zinc Oxide Films Deposited by Mist Chemical Vapor Deposition Method Applying for Photocatalysis

Aluminum-doped zinc oxide film was deposited on a glass substrate by mist chemical vapor deposition method. The influence of different aluminum doping ratios on the structural and optical properties of zinc oxide film was investigated. The XRD results revealed that the diffraction peak of (101) crystal plane was the dominant peak for the deposited AZO films with the Al doping ratios increasing from 1 wt % to 3 wt %. It was found that the variation of AZO film structures was strongly dependent on the Al/Zn ratios. The intertwined nanosheet structures were obtained when Zn/O ratios were greater than Al/O ratios with the deposition temperature of 400 °C. The optical transmittance of all AZO films was greater than 80% in the visible region. The AZO film deposited with Al doping ratio of 2 wt % showed the highest photocatalytic efficiency between the wavelength of 475 nm and 700 nm, with the high first-order reaction rate of 0.004 min−1 under ultraviolet radiation. The mechanism of the AZO film influenced by aluminum doping ratio during mist chemical vapor deposition process was revealed.

Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)

This work provides a comprehensive investigation of nitrogen and aluminum doping and its consequences for the physical properties of 3C-SiC. Free-standing 3C-SiC heteroepitaxial layers, intentionally doped with nitrogen or aluminum, were grown on Si (100) substrate with different 4° off-axis in a horizontal hot-wall chemical vapor deposition (CVD) reactor. The Si substrate was melted inside the CVD chamber, followed by the growth process. Micro-Raman, photoluminescence (PL) and stacking fault evaluation through molten KOH etching were performed on different doped samples. Then, the role of the doping and of the cut angle on the quality, density and length distribution of the stacking faults was studied, in order to estimate the influence of N and Al incorporation on the morphological and optical properties of the material. In particular, for both types of doping, it was observed that as the dopant concentration increased, the average length of the stacking faults (SFs) increased and their density decreased.

Atomistic Insights into Aluminum Doping Effect on Surface Roughness of Deposited Ultra-Thin Silver Films

Ultra-thin and continuous metallic silver films are attracting growing interest due to the applications in flexible transparent conducting electrodes. The surface morphology and structure of silver film are very important for its electrical resistivity and optical loss. Therefore, roughness control is essential for the production of ultra-thin metallic electrode film. We have investigated the effect of aluminum doping on the improvement of surface morphology of ultra-thin silver films using molecular dynamics simulations. Al-doped silver films showed smaller surface roughness than pure silver films at various substrate temperatures. When the temperature of the substrate was 600 K, the roughness of Al-doped silver film first decreased, and then increased with the increase of the incident velocity of silver atoms. Silver atoms were more likely to agglomerate on the surface of the substrate after adding aluminum atoms, as aluminum dopants promoted the immobilization of silver atoms on SiO2 substrate due to the anchoring effect. The smoother surface could be attributable to the reduced mean free path of silver due to the cage effect by the aluminum dopant.