Analysis of Delta Iddq Soft Fails on Pass Chips

Depending on the field of application the ICs have to meet requirements that differ strongly from product to product, although they may be manufactured with similar technologies. In this paper a study of a failure mode is presented that occurs on chips which have passed all functional tests. Small differences in current consumption depending on the state of an applied pattern (delta Iddq measurement) are analyzed, although these differences are clearly within the usual specs. The challenge to apply the existing failure analysis techniques to these new fail modes is explained. The complete analysis flow from electrical test and Global Failure Localization to visualization is shown. The failure is localized by means of photon emission microscopy, further analyzed by Atomic Force Probing, and then visualized by SEM and TEM imaging.

A Technique for Reliably Preparing Full-Length Metallographic Cross-Sections of Integrated Circuit Bond Wires

To overcome the obstacles in preparing high-precision cross-sections of 'blind' bond wires in integrated circuits, this article proposes a different technique that generates reliable, repeatable cross-sections of bond wires across most or all of their lengths, allowing unencumbered and relatively artifact-free analysis of a given bond wire. The basic method for cross-sectioning a 'blind' bond wire involves radiographic analysis of the sample and metallographic preparation of the sample to the plane of interest. This is followed by tracking the exact location of the plane on the original radiograph using a stereomicroscope and finally darkfield imaging in which the wire is clearly visible with good resolution.

Combine Nanoprobing Technique with Difference Analysis to Identify Nonvisual Failures

This paper presents a novel deductive methodology, which is accomplished by applying difference analysis to nano-probing technique. In order to prove the novel methodology, the specimens with 90nm process and soft failures were chosen for the experiment. The objective is to overcome the difficulty in detecting non-visual, erratic, and complex failure modes. And the original idea of this deductive method is based on the complete measurement of electrical characteristic by nano-probing and difference analysis. The capability to distinguish erratic and invisible defect was proven, even when the compound and complicated failure mode resulted in a puzzling characteristic.

Failure Analysis of Laser Blown Metal Fuse Failures in Submicron Technology by C-AFM

This paper presents a method of using a conductive atomic force microscope (C-AFM) to characterize a submicron metal fuse that has been blown open inadequately by laser. In order to obtain a proper I-V curve measured using the C-AFM without affecting the incompletely opened fuse, the paper proposes a method of preserving the fuse by coating its surface with spin-on glass. The paper explains how differences in laser cutting machines resulted in the high failure repair rate of customer product despite equivalent energy and spot size settings. Analysis of the fuse bank circuitry on wafers helped to find the critical physical differences between a fully blown and a poorly blown fuse. By overcoming difficulties in preserving the blown fuse failure sites for C-AFM measurement, laser settings could be easily optimized to ensure proper fuse opening.

The Electrical Characterization and Physical Failure Analysis for Transistor Gate Leakage

This article describes the electrical and physical analysis of gate leakage in nanometer transistors using conducting atomic force microscopy (C-AFM), nano-probing, transmission electron microscopy (TEM), and chemical decoration on simulated overstressed devices. A failure analysis case study involving a soft single bit failure is detailed. Following the nano-probing analysis, TEM cross sectioning of this failing device was performed. A voltage bias was applied to exaggerate the gate leakage site. Following this deliberate voltage overstress, a solution of boiling 10%wt KOH was used to etch decorate the gate leakage site followed by SEM inspection. Different transistor leakage behaviors can be identified with nano-probing measurements and then compared with simulation data for increased confidence in the failure analysis result. Nano-probing can be used to apply voltage stress on a transistor or a leakage path to worsen the weak point and then observe the leakage site easier.

Enhanced Detection Sensitivity with Pulsed Laser Digital Signal Integration Algorithm

This paper describes a pulsed laser induced digital signal integration algorithm for pulsed laser operation that is compatible with existing ac-coupled and dc-coupled detection systems for fault localization. This algorithm enhances laser induced detection sensitivity without a lock-in amplifier. The best detection sensitivity is achieved at a pulsing frequency range between 500 Hz to 1.5 kHz. Within this frequency range, the algorithm is capable of achieving more than 9 times enhancement in detection sensitivity.

Application of FIB Circuit Edit in Analysis of Memory Failure of SOI Devices

This article presents two cases to demonstrate the application of focused ion beam (FIB) circuit edit in analysis of memory failure of silicon on insulator (SOI) devices using XTEM and EDX analyses. The first case was a single bit failure of SRAM units manufactured with 90 nm technology in SOI wafer. The second case was the whole column failure with a single bit pass for a SRAM unit. From the results, it was concluded that FIB circuit edit and electrical characterization is a good methodology for further narrowing down the defective location of memory failure, especially for SOI technology, where contact-level passive voltage contrast is not suitable.

Application of EDS Technique for OSP Film Thickness Measurement

Organic solderability preservatives (OSPs) pad is one of the pad finishing technologies where Cu pad is coated with a thin film of an organic material to protect Cu from oxidation during storage and many processes in IC manufacturing. Thickness of OSP film is a critical factor that we have to consider and control in order to achieve desirable joint strength. Until now, no non-destructive technique has been proposed to measure OSP thickness on substrate. This paper reports about the development of EDS technique for estimating OSP thickness, starting with determination of the EDS parameter followed by establishing the correlation between C/Cu ratio and OSP thickness and, finally, evaluating the accuracy of the EDS technique for OSP thickness measurement. EDS quantitative analysis was proved that it can be utilized for OSP thickness estimation.

Laser Based Analysis on Analog Circuits with Feedback Loops and a Case Study

Based on the understanding of laser based techniques’ physics theory and the topology/structure of analog circuit systems with feedback loops, the propagation of laser induced voltage/current alteration inside the analog IC is evaluated. A setup connection scheme is proposed to monitor this voltage/current alteration to achieve a better success rate in finding the fail site or defect. Finally, a case of successful isolation of a high resistance via on an analog device is presented.

Case Studies in Atomic Force Probe Analysis

The use of atomic force probe (AFP) analysis in the analysis of semiconductor devices is expanding from its initial purpose of solely characterizing CMOS transistors at the contact level with a parametric analyzer. Other uses found for the AFP include the full electrical characterization of failing SRAM bit cells, current contrast imaging of SOI transistors, measuring surface roughness, the probing of metallization layers to measure leakages, and use with other tools, such as light emission, to quickly localize and identify defects in logic circuits. This paper presents several case studies in regards to these activities and their results. These case studies demonstrate the versatility of the AFP. The needs and demands of the failure analysis environment have quickly expanded its use. These expanded capabilities make the AFP more valuable for the failure analysis community.