Gas‐phase free radical reactions in the glow‐discharge deposition of hydrogenated amorphous silicon from silane and disilane

1985 ◽  
Vol 57 (6) ◽  
pp. 2290-2291 ◽  
Author(s):  
Frank J. Kampas
1995 ◽  
Vol 377 ◽  
Author(s):  
L. S. Sidhu ◽  
F. Gaspari ◽  
S. K. O'Leary ◽  
S. Zukotynski

ABSTRACTWe investigate deuterium incorporation into deuterated-hydrogenated amorphous silicon grown by the saddle-field glow-discharge of deuterium and silane. The presence of HD and SiH3D in the discharge suggests strong gas phase mixing. The dominant process of deuterium incorporation into the growing film appears to be the direct reaction between deuterium and the growth surface.


1993 ◽  
Vol 74 (1) ◽  
pp. 668-671 ◽  
Author(s):  
J. F. Fragalli ◽  
L. Misoguti ◽  
A. N. Nakagaito ◽  
V. Grivickas ◽  
V. S. Bagnato ◽  
...  

2004 ◽  
Vol 345-346 ◽  
pp. 302-305 ◽  
Author(s):  
S. Al-Dallal ◽  
F.Z. Henari ◽  
S.M. Al-Alawi ◽  
S.R. Arekat ◽  
H. Manaa

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