An improved large-signal model by artificial neural network for the MOSFETs operating in the breakdown region

2017 ◽  
Vol 31 (11-12) ◽  
pp. 1160-1166
Author(s):  
Chie-In Lee ◽  
Yan-Ting Lin ◽  
Wei-Cheng Lin
2014 ◽  
Vol 62 (3) ◽  
pp. 491-501 ◽  
Author(s):  
Youngseo Ko ◽  
Patrick Roblin ◽  
Andres Zarate-de Landa ◽  
J. Apolinar Reynoso-Hernandez ◽  
Dan Nobbe ◽  
...  

2000 ◽  
Vol 25 (4) ◽  
pp. 325-325
Author(s):  
J.L.N. Roodenburg ◽  
H.J. Van Staveren ◽  
N.L.P. Van Veen ◽  
O.C. Speelman ◽  
J.M. Nauta ◽  
...  

2004 ◽  
Vol 171 (4S) ◽  
pp. 502-503
Author(s):  
Mohamed A. Gomha ◽  
Khaled Z. Sheir ◽  
Saeed Showky ◽  
Khaled Madbouly ◽  
Emad Elsobky ◽  
...  

1998 ◽  
Vol 49 (7) ◽  
pp. 717-722 ◽  
Author(s):  
M C M de Carvalho ◽  
M S Dougherty ◽  
A S Fowkes ◽  
M R Wardman

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