First demonstration of InAlAs/InGaAs HEMTs using T-gates fabricated by a bilayer of UVIII and PMMA resists

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) ◽

10.1109/edmo.2000.919059 ◽

2002 ◽

Author(s):

Y. Chen ◽

T. Lodhi ◽

H. McLelland ◽

D.L. Edgar ◽

D. Macintyre ◽

...

Download Full-text