8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)
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First demonstration of InAlAs/InGaAs HEMTs using T-gates fabricated by a bilayer of UVIII and PMMA resists

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) ◽

10.1109/edmo.2000.919059 ◽

2002 ◽

Author(s):

Y. Chen ◽

T. Lodhi ◽

H. McLelland ◽

D.L. Edgar ◽

D. Macintyre ◽

...

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Measurements and analysis of the optimisation of HBT circuits for optical demodulator designs

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) ◽

10.1109/edmo.2000.919067 ◽

2002 ◽

Author(s):

P.J. Langlois ◽

A.A. Rezazadeh

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Design of nearly body-effect free Si/SiGe MODFETs

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) ◽

10.1109/edmo.2000.919023 ◽

2002 ◽

Author(s):

J.E. Velazquez ◽

W. Jeamsaksiri ◽

J.C. Yeoh ◽

K. Fobelets

Keyword(s):

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CIA-a comprehensive CAD tool for analog, RF, and microwave IC's

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) ◽

10.1109/edmo.2000.919061 ◽

2002 ◽

Author(s):

J. Dobes

Keyword(s):

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Si/SiGe IC's with low cost in the 15 to 20 GHz range

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) ◽

10.1109/edmo.2000.919022 ◽

2002 ◽

Author(s):

T. Teppo ◽

E. Sonmez ◽

K.-B. Schad ◽

L. Abele ◽

H. Schumacher

Keyword(s):

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Efficient direct modulation of colliding pulse mode-locked lasers on semi-insulating substrate at 1.5 μm

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) ◽

10.1109/edmo.2000.919051 ◽

2002 ◽

Author(s):

H.K. Lee ◽

M.W. Street ◽

I.G. Thayne ◽

A.C. Bryce ◽

J.H. Marsh

Keyword(s):

Direct Modulation ◽

Mode Locked Lasers

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GaN/AlGaN HFETs fabricated on a SiC substrate

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) ◽

10.1109/edmo.2000.919032 ◽

2002 ◽

Author(s):

M.J. Uren ◽

T. Martin ◽

J.C. Birbeck ◽

R. Balmer ◽

B.T. Hughes ◽

...

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The gate-length dependent performance of AlGaN/GaN HFETs with silicon nitride passivation

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) ◽

10.1109/edmo.2000.919033 ◽

2002 ◽

Author(s):

R.A. Davies ◽

D.J. Bazley ◽

S.K. Jones ◽

H.A. Lovekin ◽

W.A. Phillips ◽

...

Keyword(s):

Silicon Nitride ◽

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The Ultrafast Photonics Collaboration (UPC)

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) ◽

10.1109/edmo.2000.919026 ◽

2002 ◽

Author(s):

T.F. Krauss

Keyword(s):

Ultrafast Photonics

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Metal gate strained silicon MOSFETs for microwave integrated circuits

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) ◽

10.1109/edmo.2000.919024 ◽

2002 ◽

Author(s):

G. Ternent ◽

D.L. Edger ◽

H. McLelland ◽

F. Williamson ◽

S. Ferguson ◽

...

Keyword(s):

Integrated Circuits ◽

Strained Silicon ◽

Microwave Integrated Circuits

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