Study of degradation and breakdown properties of HfO2 dielectric by c-AFM and SSPM

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760733 ◽

2008 ◽

Author(s):

J. An ◽

K. Xue ◽

J. B. Xu

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