2008 IEEE International Conference on Electron Devices and Solid-State Circuits
Latest Publications

TOTAL DOCUMENTS

125

(FIVE YEARS 0)

H-INDEX

5

(FIVE YEARS 0)

Published By IEEE

9781424425396

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Study of degradation and breakdown properties of HfO2 dielectric by c-AFM and SSPM

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760733 ◽

2008 ◽

Author(s):

J. An ◽

K. Xue ◽

J. B. Xu

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Resonant MEMS sensors for detection of aqueous heavy metal ions with Sub-ppm resolution

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760702 ◽

2008 ◽

Author(s):

Amir Rahafrooz ◽

Siavash Pourkamali

Keyword(s):

Heavy Metal ◽

Heavy Metal Ions ◽

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GaN photodetectors prepared on silicon and sapphire substrates

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760697 ◽

2008 ◽

Author(s):

S. P. Chang ◽

S. J. Chang ◽

C. Y. Lu ◽

R. W. Chuang

Keyword(s):

Sapphire Substrates

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GaN Schottky barrier photodetectors with multi-MgN/GaN buffer

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760683 ◽

2008 ◽

Author(s):

K. H. Lee ◽

P. C. Chang ◽

S. J. Chang ◽

Y. C. Wang ◽

C. H. Kuo ◽

...

Keyword(s):

Schottky Barrier

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SPRAM (SPin-transfer torque RAM) Technology for Green IT World

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760631 ◽

2008 ◽

Author(s):

T. Kawahara ◽

H. Takahashi ◽

H. Ohno

Keyword(s):

Spin Transfer Torque ◽

Spin Transfer ◽

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Effective channel length increased due to switching from ≪110≫ to ≪100≫ orientation for PMOS transistors fabricated by 65 nm CMOS technology

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760686 ◽

2008 ◽

Author(s):

W.S. Lau ◽

Peizhen Yang ◽

V. Ho ◽

B.K. Lim ◽

S.Y. Siah ◽

...

Keyword(s):

Cmos Technology ◽

Channel Length ◽

Effective Channel

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Effects of uniaxial strain on the gate capacitance of double gate MOSFETs

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760706 ◽

2008 ◽

Author(s):

Md. Itrat Bin Shams ◽

Md. Kawsar Alam ◽

Quazi D. M. Khosru

Keyword(s):

Uniaxial Strain ◽

Double Gate ◽

Gate Capacitance

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Polysilicon nanowire chemical sensor based on CMOS standard process

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760705 ◽

2008 ◽

Author(s):

C.-W. Huang ◽

S.-C. Hsu ◽

C.-T. Lin

Keyword(s):

Chemical Sensor ◽

Standard Process

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Low-leakage and low-power implementation of high-speed 65nm logic gates

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760641 ◽

2008 ◽

Author(s):

Tsung-Yi Wu ◽

Liang-Ying Lu ◽

Cheng-Hsun Liang

Keyword(s):

Low Power ◽

Logic Gates ◽

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Circuit implementation to describe the physical behavior of phase change memory

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760753 ◽

2008 ◽

Author(s):

K. C. Kwong ◽

Mansun Chan

Keyword(s):

Phase Change ◽

Phase Change Memory ◽

Circuit Implementation ◽

Physical Behavior ◽

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