Sub-Threshold Characteristics of the 0.2 um Capless InP/In0.52Al0.48As/In0.53Ga0.47As p-HEMTs having a Self-Aligned Gate

2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings ◽

10.1109/iciprm.2006.1634177 ◽

2006 ◽

Author(s):

Tae-Woo Kim ◽

Seong June Jo ◽

Seung Heon Shin ◽

Jae-Hyung Jang ◽

Jong-In Song

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