2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings

2006 ◽

Author(s):

Y. Nishimoto ◽

H. Yagi ◽

K. Miura ◽

D. Plumwongrot ◽

K. Ohira ◽

...

Keyword(s):

Quantum Wire ◽

Bragg Wavelength

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Ultrafast All-Optical Switches using Intersubband Transition in Quantum Wells

2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings ◽

10.1109/iciprm.2006.1634157 ◽

2006 ◽

Author(s):

H. Ishikawa ◽

T. Simoyama ◽

M. Nagase ◽

T. Mozume ◽

R. Akimoto ◽

...

Keyword(s):

Quantum Wells ◽

Optical Switches ◽

Intersubband Transition ◽

All Optical

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Sub-Threshold Characteristics of the 0.2 um Capless InP/In0.52Al0.48As/In0.53Ga0.47As p-HEMTs having a Self-Aligned Gate

2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings ◽

10.1109/iciprm.2006.1634177 ◽

2006 ◽

Author(s):

Tae-Woo Kim ◽

Seong June Jo ◽

Seung Heon Shin ◽

Jae-Hyung Jang ◽

Jong-In Song

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Intersubband Transitions in Novel Strained Coupled Quantum Wells based on In0.53Ga0.47As Grown by Molecular Beam Epitaxy

2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings ◽

10.1109/iciprm.2006.1634191 ◽

2006 ◽

Author(s):

M. Nagase ◽

T. Mozume ◽

T. Simoyama ◽

T. Hasama ◽

H. Ishikawa

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Intersubband Transitions ◽

Coupled Quantum Wells

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Re-Growth of Transistors on Implanted InP

2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings ◽

10.1109/iciprm.2006.1634197 ◽

2006 ◽

Author(s):

R.D. Rajavel ◽

M.Y. Chen ◽

Y. Royter ◽

J.C. Li ◽

S.S. Bui ◽

...

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A Technology for Integrating Active Photonic Devices on SOI Wafers

2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings ◽

10.1109/iciprm.2006.1634153 ◽

2006 ◽

Cited By ~ 1

Author(s):

J.E. Bowers ◽

Hyundai Park ◽

A.W. Fang ◽

R. Jones ◽

O. Cohen ◽

...

Keyword(s):

Photonic Devices

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Reduced Features Two-Dimensional Photonic Crystals on InP-based Materials Etched using Cl2/Ar Inductive Coupled Plasma

2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings ◽

10.1109/iciprm.2006.1634184 ◽

2006 ◽

Cited By ~ 1

Author(s):

K.H. Lee ◽

S. Guilet ◽

I. Sagnes ◽

A. Talneau

Keyword(s):

Photonic Crystals ◽

Two Dimensional

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State of the Art Low Power (42mW per flip-flop) 150GHz+ CML Static Divider Implemented in Scaled 0.2 m Emitter-width InP DHBTs

2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings ◽

10.1109/iciprm.2006.1634117 ◽

2006 ◽

Cited By ~ 3

Author(s):

D.A. Hitko ◽

T. Hussain ◽

D.S. Matthews ◽

R.D. Rajavel ◽

I. Milosavljevic ◽

...

Keyword(s):

Low Power ◽

State Of The Art ◽

Flip Flop

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A Manufacturable True E-Mode MHEMT with High Static and Dynamic Performances

2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings ◽

10.1109/iciprm.2006.1634144 ◽

2006 ◽

Cited By ~ 2

Author(s):

H. Maher ◽

P. Baudet ◽

I.E. Makoudi ◽

M.-G. Perichaud ◽

J. Bellaiche ◽

...

Keyword(s):

Dynamic Performances

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High-Current-Gain InAlP/AlGaAsSb/InP HBTs with a Compositionally-Graded AlGaAsSb Base Grown by MOCVD

2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings ◽

10.1109/iciprm.2006.1634119 ◽

2006 ◽

Cited By ~ 5

Author(s):

Y. Oda ◽

K. Kurishima ◽

N. Watanabe ◽

M. Uchida ◽

T. Kobayashi

Keyword(s):

Current Gain ◽

High Current

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2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

High T0 Operation of 1590 nm GaInAsP/InP Quantum-Wire DFB Lasers by Bragg Wavelength Detuning

Ultrafast All-Optical Switches using Intersubband Transition in Quantum Wells

Sub-Threshold Characteristics of the 0.2 um Capless InP/In0.52Al0.48As/In0.53Ga0.47As p-HEMTs having a Self-Aligned Gate

Intersubband Transitions in Novel Strained Coupled Quantum Wells based on In0.53Ga0.47As Grown by Molecular Beam Epitaxy

Re-Growth of Transistors on Implanted InP

A Technology for Integrating Active Photonic Devices on SOI Wafers

Reduced Features Two-Dimensional Photonic Crystals on InP-based Materials Etched using Cl2/Ar Inductive Coupled Plasma

State of the Art Low Power (42mW per flip-flop) 150GHz+ CML Static Divider Implemented in Scaled 0.2 m Emitter-width InP DHBTs

A Manufacturable True E-Mode MHEMT with High Static and Dynamic Performances

High-Current-Gain InAlP/AlGaAsSb/InP HBTs with a Compositionally-Graded AlGaAsSb Base Grown by MOCVD

Export Citation Format

2006 International Conference on Indium Phosphide and Related Materials Conference ProceedingsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

High T0 Operation of 1590 nm GaInAsP/InP Quantum-Wire DFB Lasers by Bragg Wavelength Detuning

Ultrafast All-Optical Switches using Intersubband Transition in Quantum Wells

Sub-Threshold Characteristics of the 0.2 um Capless InP/In0.52Al0.48As/In0.53Ga0.47As p-HEMTs having a Self-Aligned Gate

Intersubband Transitions in Novel Strained Coupled Quantum Wells based on In0.53Ga0.47As Grown by Molecular Beam Epitaxy

Re-Growth of Transistors on Implanted InP

A Technology for Integrating Active Photonic Devices on SOI Wafers

Reduced Features Two-Dimensional Photonic Crystals on InP-based Materials Etched using Cl2/Ar Inductive Coupled Plasma

State of the Art Low Power (42mW per flip-flop) 150GHz+ CML Static Divider Implemented in Scaled 0.2 m Emitter-width InP DHBTs

A Manufacturable True E-Mode MHEMT with High Static and Dynamic Performances

High-Current-Gain InAlP/AlGaAsSb/InP HBTs with a Compositionally-Graded AlGaAsSb Base Grown by MOCVD

2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings
Latest Publications