Lattice-matched p+-GaAsSb/i-InAlAs/n-InGaAs zero-bias backward diodes for millimeter-wave detectors and mixers

Author(s):  
Tsuyoshi Takahashi ◽  
Masaru Sato ◽  
Yasuhiro Nakasha ◽  
Naoki Hara
2012 ◽  
Vol 5 (9) ◽  
pp. 094201 ◽  
Author(s):  
Tsuyoshi Takahashi ◽  
Masaru Sato ◽  
Yasuhiro Nakasha ◽  
Naoki Hara

2015 ◽  
Vol 36 (6) ◽  
pp. 065002 ◽  
Author(s):  
Changfei Yao ◽  
Ming Zhou ◽  
Yunsheng Luo ◽  
Conghai Xu

2001 ◽  
Vol 22 (5) ◽  
pp. 200-202 ◽  
Author(s):  
J.N. Schulman ◽  
D.H. Chow ◽  
D.M. Jang

Author(s):  
J.N. Schulman ◽  
D.H. Chow ◽  
C.W. Pobanz ◽  
H.L. Dunlap ◽  
C.D. Haeussler
Keyword(s):  

Author(s):  
C.C. Chang ◽  
D.L. Lynch ◽  
M.D. Sohigian ◽  
G.F. Anderson ◽  
T. Schaffer ◽  
...  

1993 ◽  
Vol 300 ◽  
Author(s):  
C. Yuen ◽  
Y. C. Pao ◽  
N. Chiang ◽  
N. G. Bechtel

ABSTRACTLattice matched InP HEMT has demonstrated superior gain and noise figure performance compared to the AlGaAs HEMT and PHEMT. The gain and noise figure advantages of the InP HEMT have been transferred to the excellent MMIC performance in the millimeter-wave region.


2012 ◽  
Vol 33 (10) ◽  
pp. 1357-1359 ◽  
Author(s):  
J. S. Moon ◽  
H.-C. Seo ◽  
M. Antcliffe ◽  
S. Lin ◽  
C. McGuire ◽  
...  

Author(s):  
Chun-Yen Huang ◽  
Chin-Chung Nien ◽  
Chen-Ming Li ◽  
Ya-Chung Yu ◽  
Li-Yuan Chang ◽  
...  

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