Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

2006 International Electron Devices Meeting ◽

10.1109/iedm.2006.346905 ◽

2006 ◽

Author(s):

J.H. Oh ◽

J.H. Park ◽

Y.S. Lim ◽

H.S. Lim ◽

Y.T. Oh ◽

...

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