2006 International Electron Devices Meeting
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TOTAL DOCUMENTS

284
(FIVE YEARS 0)

H-INDEX

32
(FIVE YEARS 0)

Published By IEEE

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Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

XtreMOS : The First Integrated Power Transistor Breaking the Silicon Limit

2006 ◽  
Author(s):  
P. Moens ◽  
F. Bauwens ◽  
J. Baele ◽  
K. Vershinin ◽  
E. De Backer ◽  
...  
Keyword(s):  
Power Transistor

A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

2006 ◽  
Author(s):  
Erh-Kun Lai ◽  
Hang-Ting Lue ◽  
Yi-Hsuan Hsiao ◽  
Jung-Yu Hsieh ◽  
Chi-Pin Lu ◽  
...  
Keyword(s):  
Thin Film ◽  
Flash Memory ◽  
Thin Film Transistor

Optimization of Sub-Melt Laser Anneal: Performance and Reliability

2006 ◽  
Author(s):  
S. Severi ◽  
E. Augendre ◽  
S. Thirupapuliyur ◽  
K. Ahmed ◽  
S. Felch ◽  
...  
Keyword(s):  
Laser Anneal

Practical Work Function Tuning Based on Physical and Chemical Nature of Interfacial Impurity in Ni-FUSI/SiON and HfSiON Systems

2006 ◽  
Author(s):  
Yoshinori Tsuchiya ◽  
Masahiko Yoshiki ◽  
Motoyuki Sato ◽  
Katsuyuki Sekine ◽  
Tomohiro Saito ◽  
...  
Keyword(s):  
Work Function ◽  
Chemical Nature ◽  
Practical Work ◽  
Work Function Tuning ◽  
Physical And Chemical

High Current Drive in Ultra-Short Impact Ionization MOS (I-MOS) Devices

2006 ◽  
Author(s):  
C. Charbuillet ◽  
S. Monfray ◽  
E. Dubois ◽  
P. Bouillon ◽  
F. Judong ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Current Drive ◽  
High Current ◽  
Mos Devices

A New Surface Potential Based Poly-Si TFT Model for Circuit Simulation

2006 ◽  
Author(s):  
H. Tsuji ◽  
T. Kuzuoka ◽  
Y. Kishida ◽  
Y. Shimizu ◽  
M. Kirihara ◽  
...  
Keyword(s):  
Surface Potential ◽  
Circuit Simulation

Highly Manufacturable Single Metal Gate Process Using Ultra-Thin Metal Inserted Poly-Si Stack (UT-MIPS)

2006 ◽  
Author(s):  
Sung Kee Han ◽  
Hyung-Suk Jung ◽  
Hajin Lim ◽  
Min Joo Kim ◽  
Cheol-kyu Lee ◽  
...  
Keyword(s):  
Thin Metal ◽  
Metal Gate

Ultra-Thin Phase-Change Bridge Memory Device Using GeSb

2006 ◽  
Author(s):  
Y. C. Chen ◽  
C. T. Rettner ◽  
S. Raoux ◽  
G. W. Burr ◽  
S. H. Chen ◽  
...  
Keyword(s):  
Phase Change ◽  
Memory Device

Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

2006 ◽  
Author(s):  
J.H. Oh ◽  
J.H. Park ◽  
Y.S. Lim ◽  
H.S. Lim ◽  
Y.T. Oh ◽  
...  
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