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2006 International Electron Devices Meeting
Latest Publications
TOTAL DOCUMENTS
284
(FIVE YEARS 0)
H-INDEX
32
(FIVE YEARS 0)
Published By IEEE
142440438x
Latest Documents
Most Cited Documents
Contributed Authors
Related Sources
Related Keywords
Latest Documents
Most Cited Documents
Contributed Authors
Related Sources
Related Keywords
XtreMOS : The First Integrated Power Transistor Breaking the Silicon Limit
2006 International Electron Devices Meeting
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10.1109/iedm.2006.346933
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2006
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Cited By ~ 29
Author(s):
P. Moens
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F. Bauwens
◽
J. Baele
◽
K. Vershinin
◽
E. De Backer
◽
...
Keyword(s):
Power Transistor
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A New Surface Potential Based Poly-Si TFT Model for Circuit Simulation
2006 International Electron Devices Meeting
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10.1109/iedm.2006.346991
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2006
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Cited By ~ 6
Author(s):
H. Tsuji
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T. Kuzuoka
◽
Y. Kishida
◽
Y. Shimizu
◽
M. Kirihara
◽
...
Keyword(s):
Surface Potential
◽
Circuit Simulation
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Highly Manufacturable Single Metal Gate Process Using Ultra-Thin Metal Inserted Poly-Si Stack (UT-MIPS)
2006 International Electron Devices Meeting
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10.1109/iedm.2006.346860
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2006
◽
Cited By ~ 4
Author(s):
Sung Kee Han
◽
Hyung-Suk Jung
◽
Hajin Lim
◽
Min Joo Kim
◽
Cheol-kyu Lee
◽
...
Keyword(s):
Thin Metal
◽
Metal Gate
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Ultra-Thin Phase-Change Bridge Memory Device Using GeSb
2006 International Electron Devices Meeting
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10.1109/iedm.2006.346910
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2006
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Cited By ~ 75
Author(s):
Y. C. Chen
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C. T. Rettner
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S. Raoux
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G. W. Burr
◽
S. H. Chen
◽
...
Keyword(s):
Phase Change
◽
Memory Device
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Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology
2006 International Electron Devices Meeting
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10.1109/iedm.2006.346905
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2006
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Cited By ~ 73
Author(s):
J.H. Oh
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J.H. Park
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Y.S. Lim
◽
H.S. Lim
◽
Y.T. Oh
◽
...
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High Stability, Low Leakage Nanocrystalline Silicon Bottom Gate Thin Film Transistors for AMOLED Displays
2006 International Electron Devices Meeting
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10.1109/iedm.2006.346768
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2006
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Cited By ~ 6
Author(s):
Mohammad R. Esmaeili-Rad
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Andrei Sazonov
◽
Arokia Nathan
Keyword(s):
Thin Film
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Thin Film Transistors
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High Stability
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Nanocrystalline Silicon
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Low Leakage
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Bottom Gate
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A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory
2006 International Electron Devices Meeting
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10.1109/iedm.2006.346903
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2006
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Cited By ~ 51
Author(s):
Erh-Kun Lai
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Hang-Ting Lue
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Yi-Hsuan Hsiao
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Jung-Yu Hsieh
◽
Chi-Pin Lu
◽
...
Keyword(s):
Thin Film
◽
Flash Memory
◽
Thin Film Transistor
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Optimization of Sub-Melt Laser Anneal: Performance and Reliability
2006 International Electron Devices Meeting
◽
10.1109/iedm.2006.346917
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2006
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Cited By ~ 10
Author(s):
S. Severi
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E. Augendre
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S. Thirupapuliyur
◽
K. Ahmed
◽
S. Felch
◽
...
Keyword(s):
Laser Anneal
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Practical Work Function Tuning Based on Physical and Chemical Nature of Interfacial Impurity in Ni-FUSI/SiON and HfSiON Systems
2006 International Electron Devices Meeting
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10.1109/iedm.2006.347005
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2006
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Cited By ~ 5
Author(s):
Yoshinori Tsuchiya
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Masahiko Yoshiki
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Motoyuki Sato
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Katsuyuki Sekine
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Tomohiro Saito
◽
...
Keyword(s):
Work Function
◽
Chemical Nature
◽
Practical Work
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Work Function Tuning
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Physical And Chemical
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High Current Drive in Ultra-Short Impact Ionization MOS (I-MOS) Devices
2006 International Electron Devices Meeting
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10.1109/iedm.2006.346983
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2006
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Cited By ~ 15
Author(s):
C. Charbuillet
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S. Monfray
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E. Dubois
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P. Bouillon
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F. Judong
◽
...
Keyword(s):
Impact Ionization
◽
Current Drive
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High Current
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Mos Devices
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