4.5 kV 4H-SiC diodes with ideal forward characteristic

Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) ◽

10.1109/ispsd.2001.934553 ◽

2002 ◽

Author(s):

H. Lendenmann ◽

A. Mukhitdinov ◽

F. Dahlquist ◽

H. Bleichner ◽

M. Irwin ◽

...

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