Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216)
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600 V CSTBT having ultra low on-state voltage

Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) ◽

10.1109/ispsd.2001.934648 ◽

2002 ◽

Author(s):

H. Takahashi ◽

S. Aono ◽

E. Yoshida ◽

J. Moritani ◽

S. Hine

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Design consideration for 2 kV SiC-SIT

Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) ◽

10.1109/ispsd.2001.934584 ◽

2002 ◽

Author(s):

H. Onose ◽

T. Yatsuo ◽

A. Watanabe ◽

T. Yokota ◽

T. Ishikawa ◽

...

Keyword(s):

Design Consideration

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Ultra-high voltage device termination using the 3D RESURF (super-junction) concept - experimental demonstration at 6.5 kV

Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) ◽

10.1109/ispsd.2001.934573 ◽

2002 ◽

Author(s):

F. Udrea ◽

T. Trajkovic ◽

J. Thomson ◽

L. Coulbeck ◽

P.R. Waind ◽

...

Keyword(s):

High Voltage ◽

Experimental Demonstration ◽

Ultra High Voltage

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4.5 kV 4H-SiC diodes with ideal forward characteristic

Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) ◽

10.1109/ispsd.2001.934553 ◽

2002 ◽

Author(s):

H. Lendenmann ◽

A. Mukhitdinov ◽

F. Dahlquist ◽

H. Bleichner ◽

M. Irwin ◽

...

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The 5/sup th/ generation highly rugged planar IGBT using sub-micron process technology

Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) ◽

10.1109/ispsd.2001.934643 ◽

2002 ◽

Author(s):

J. Yamashita ◽

C. Yoshida ◽

C. Fujii ◽

K. Takanashi ◽

J. Moritano

Keyword(s):

Process Technology

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Recessed trench MOSFET process without critical alignments makes very high densities possible

Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) ◽

10.1109/ispsd.2001.934610 ◽

2002 ◽

Author(s):

A. Finney ◽

J. Evans ◽

P. Blair ◽

J. Earnshaw ◽

P. Jerred ◽

...

Keyword(s):

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Fabrication of high aspect ratio doping region by using trench filling of epitaxial Si growth

Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) ◽

10.1109/ispsd.2001.934630 ◽

2002 ◽

Author(s):

S. Yamauchi ◽

Y. Urakami ◽

N. Suzuki ◽

N. Tsuji ◽

H. Yamaguchi

Keyword(s):

Aspect Ratio ◽

High Aspect Ratio

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Destruction mechanism of PT and NPT-IGBTs in the short circuit operation-an estimation from the quasi-stationary simulations

Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) ◽

10.1109/ispsd.2001.934621 ◽

2002 ◽

Author(s):

I. Takata

Keyword(s):

Short Circuit ◽

Destruction Mechanism

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A high density, low on-resistance, trench lateral power MOSFET with a trench bottom source contact

Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) ◽

10.1109/ispsd.2001.934576 ◽

2002 ◽

Author(s):

N. Fujishima ◽

A. Sugi ◽

T. Suzuki ◽

S. Kanjiwara ◽

K. Matsubara ◽

...

Keyword(s):

High Density ◽

Power Mosfet ◽

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New benchmark for RESURF, SOI and super-junction power devices

Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) ◽

10.1109/ispsd.2001.934625 ◽

2002 ◽

Author(s):

R.P. Zingg

Keyword(s):

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