Electrical Properties of Oxygenated Amorphous Si Prepared by Ion-Beam Sputtering

Japanese Journal of Applied Physics ◽

10.1143/jjap.18.1395 ◽

1979 ◽

Vol 18 (7) ◽

pp. 1395-1396 ◽

Author(s):

Kiyoshi Ishii ◽

Masahiko Naoe ◽

Shun'ichi Yamanaka ◽

Shuichi Okano ◽

Masakuni Suzuki

Keyword(s):

Electrical Properties ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Beam Sputtering ◽

Download Full-text